MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. O U T L IN E D R A W IN G U nit:m illim e te rs (inc he s ) 24 + /- 0 .3 FEATURES 2 M IN Internally matched to 50 ohm system High output power P1dB = 16W (TYP.) @ f=6.4 - 7.2 GHz High power gain GLP =8.0 dB (TYP.) @ f=6.4 - 7.2 GHz High power added efficiency P.A.E. = 31 % (TYP.) @ f=6.4 - 7.2 GHz Low Distortion[Item-51] IM3=-45 dBc(TYP.)@Po=31.0dBm S.C.L. 0.6 + /- 0 .1 5 (1 ) 8 .0 + /- 0 .2 (2 ) 2 M IN 1 7 .4 + /- 0 .2 R 1.2 (3 ) APPLICATION 4 .3 + /- 0 .4 16 .7 QUALITY GRADE 1 .4 IG RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 4.5 (A) Rg=25 (ohm) 2 .4 + /- 0 .2 item 51 : 6.4 - 7.2 GHz band digital radio communication 0 .1 + /- 0 .0 5 20 .4 + /- 0.2 item 01 : 6.4 - 7.2 GHz band power amplifier (1) GATE (2) SOURCE(FIANGE) (3) DRAIN G F -38 Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS Symbol Ratings Unit VGDO Gate to drain voltage -15 V Mitsubishi Electric Corporation puts the maximum effort into VGSO Gate to source voltage -15 V making semiconductor products better and more reliable, but there is always the possibility that trouble may occur ID Parameter < Keep safety first in your circuit designs! > Drain current 15 A IGR Reverse gate current -40 mA with them. Trouble with semiconductors may lead to personal IGF Forward gate current 84 mA injury, fire or property damage. Remember to give due PT Total power dissipation 93.7 W consideration to safety when making your circuit designs, Tch Channel temperature 175 deg.C with appropriate measures such as (1)placement of Tstg Storage temperature -65 / +175 deg.C substitutive, auxiliary circuits, (2)use of non-flammable *1 : Tc=25 Deg.C material or (3)prevention against any malfunction or mishap. ABSOLUTE MAXIMUM RATINGS Symbol IDSS Gm VGS(off) P1dB GLP ID PAE IM3 Parameter Limits Test conditions Unit Min Typ Max Saturated drain current VDS = 3V , VGS = 0V - 9 12 A Transconductance VDS = 3V , ID = 4.4A - 4 - S VDS = 3V , ID = 80mA -2 -3 -4 V 41.5 42.5 - dBm 7 8 - dB - 4.5 - A Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain VDS=10V, ID(RF off)=4.5A, f=6.4-7.2GHz Drain current Power added efficiency 3rd order IM distortion Rth(ch-c) Thermal resistance *1 *2 - 31 - % -42 -45 - dBc - - 1.6 Deg.C/W Delta Vf method *1 : item -51,2 tone test,Po=31.0dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case MITSUBISHI ELECTRIC Oct-'03 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2 GHz BAND 16W INTERNALLY MATCHED GaAs FET (Ta=25 Deg.C) Po,Eadd VS. Pin OUTPUT POWER Po(dBm) OUTPUT POWER P1dB(dBm) LINEAR POWER GAIN Glp(dB) P1dB,Glp VS. f POWER ADDED EFFICIENCY Eadd(%) TYPICAL CHARACTERISTICS IM3(dBc) OUTPUT POWER Po(dBm S.C.L) Po,IM3 VS. Pin S PARAMETERS (Ta=25 Deg.C , VDS=10V , IDS=4.5A) S Parameters (TYP.) f (GHz) S11 Magn. Angle(deg.) S21 Magn. Angle(deg.) Magn. S12 Angle(deg.) Magn. S22 Angle(deg.) 6.40 0.35 57 2.98 -113 0.078 -159 0.29 113 6.50 0.29 36 2.95 -132 0.080 -176 0.36 97 6.60 0.22 22 2.87 -149 0.082 167 0.41 83 6.70 0.16 7 2.80 -166 0.082 153 0.46 70 6.80 0.09 -7 2.73 177 0.080 136 0.50 61 6.90 0.01 -43 2.63 162 0.078 123 0.52 54 7.00 0.08 144 2.54 145 0.080 105 0.53 47 7.10 0.14 134 2.46 135 0.074 92 0.52 41 7.20 0.24 121 2.37 119 0.072 85 0.51 34 MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V6472A 6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC