27-March'98 PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> Notice: This is not a final specification. Some parametric limits are subject to change. MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Unit:millimeters (inches) 24 +/- 0.3 FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=6.4-7.2 GHz High power gain GLP = 8 dB (TYP.) @ f=6.4-7.2GHz High power added efficiency PAE = 28 % (TYP.) @ f=6.4-7.2GHz Low distortion [item -51] IM3=-42dBc(min.) @Po=34.5dBm S.C.L. 0.6 +/- 0.15 2 (1) R1.2 8 (3) 2 1 (2) Thermal Resistance Rth(ch-c)=1.0 deg.C/W(MAX.) 20.4 +/- 0.2 APPLICATION 0 . 2 16.7 item 01 : 6.4-7.2 GHz band power amplifier item 51 : 6.4-7.2 GHz band digital ratio communication 47 QUALITY GRADE 1 IG RECOMMENDED BIAS CONDITIONS VDS = 10V ID = 8.0 A RG=25 ohm (1) GATE (2) SOURCE(FIANGE) (3) DRAIN GF-38 (Ta=25 deg.C) Ratings Unit Gate to drain voltage -15 V VGSO Gate to source voltage -15 V Drain current 30 A IGR Reverse gate current -60 mA IGF Forward gate current 126 mA PT Total power dissipation 125 W Tch Channel temperature 175 deg.C -65/+175 deg.C . M ID . Parameter VGDO .. Symbol 0 . ABSOLUTE MAXIMUM RATINGS IDSS Gm Parameter (Ta=25 deg.C) Limits Test conditions Unit Min. Typ. Max. Saturated drain current VDS=3V, VGS=0V - 20 - A Transconductance VDS=3V, ID=6.4A - 8.0 - V VDS = 3V , ID = 120mA - - -5 V 44.5 45 - dBm 7 8 - dB - 35 - % -42 -45 - dBc - - 1.0 deg.C/W VGS(off) Gate to source cut-off voltage Output power at 1dB gain P1dB compression GLP Linear power gain PAE Power added efficiency IM3 3rd order IM distortion Rth(ch-c) Thermal resistance 4 Symbol 4M 3 ELECTRICAL CARACTERISTICS 1 4 Tstg Storage temperature *1 : Tc=25 deg.C VDS=10V, ID(RF off)=8.0A, f=6.4-7.2GHz *1 *2 Delta Vf method *1 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case MITSUBISHI ELECTRIC 27-March'98 PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> Notice: This is not a final specification. Some parametric limits are subject to change. MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta=25deg.C) Po , PAE vs. Pin P1dB ,GLP vs. f 46 11 45 40 45 10 40 30 35 20 VDS=10(V) IDS=8(A) VDS=10(V) IDS=8(A) f=6.8(GHz) 9 43 8 LINEAR POWER GAIN GLP(dB) GLP 44 OUTPUT POWER Po(dBm) P1dB PAE 10 30 7 42 Po 0 25 6.3 6.4 6.5 6.6 6.7 6.8 6.9 7.0 7.1 7.2 7.3 20 25 30 35 40 POWER ADDED EFFICIECY PAE (%) 47 OUTPUT POWER P1dB (dBm) 50 12 50 45 INPUTPOWER Pin(dBm) FREQUENCY f(GHz) Po,IM3 vs.Pin 40 0 VDS=10(V) IDS=8(A) f=7.2(GHz) Delta f=10(MHz) Po -10 36 -20 32 -30 28 -40 IM3 24 -50 20 -60 16 IM3 (dBc) OUTPUT POWER Po (dBm S.C.L.) 44 -70 18 20 22 24 26 28 30 32 34 36 INPUT POWER Pin (dBm S.C.L.) S PARAMETERS (Ta=25deg.C,VDS=10V,ID=8.0A) f (GHz) 6.4 6.5 6.6 6.7 6.8 6.9 7.0 7.1 7.2 Magn. 0.66 0.61 0.56 0.50 0.43 0.35 0.24 0.15 0.01 S11 Angle(deg.) 100 84 70 57 42 27 12 1 -10 Magn. 2.39 2.43 2.47 2.54 2.59 2.66 2.73 2.75 2.72 S Parameters (TYP.) S21 Angle(deg.) Magn. -106 0.057 -122 0.065 -138 0.071 -154 0.079 -170 0.088 173 0.095 155 0.101 143 0.105 123 0.109 MITSUBISHI ELECTRIC S12 Angle(deg.) -171 174 160 145 131 116 100 88 70 Magn. 0.32 0.34 0.35 0.35 0.34 0.31 0.27 0.24 0.20 S22 Angle(deg.) 74 64 52 40 27 12 -8 -27 -61