MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. 24 +/- 0.3 FEATURES 0.6 +/- 0.15 (1) 2MIN Internally matched to 50 ohm system High output power P1dB = 16W (TYP.) @ f=5.9 - 6.4 GHz High power gain GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz High power added efficiency P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz Low Distortion[Item-51] IM3=-45 dBc(MIN.)@Po=31.0dBm S.C.L. R1.2 (2) +/- 0.2 17.4 8.0 +/- 0.2 (3) 2MIN APPLICATION 20.4 +/- 0.2 item 01 : 5.9 - 6.4 GHz band power amplifier item 51 : 5.9 - 6.4 GHz band digital radio communication 16.7 QUALITY GRADE 2.4 0.05 +/- 0.2 0.1 +/- IG 4.3 +/- 0.4 RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 4.5 (A) Rg=25 (ohm) 1.4 Refer to Bias Procedure (1) gate (2) source(flange) (3)drain GF-38 ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO Ratings Unit Gate to drain voltage Parameter -15 V Mitsubishi Electric Corporation puts the maximum effort into < Keep safety first in your circuit designs! > Gate to source voltage -15 V making semiconductor products better and more reliable, Drain current 15 A but there is always the possibility that trouble may occur IGR Reverse gate current -40 mA with them. Trouble with semiconductors may lead to personal IGF Forward gate current injury, fire or property damage. Remember to give due PT Total power dissipation Tch Tstg ID 84 mA 93.7 W Channel temperature 175 deg.C with appropriate measures such as (1)placement of Storage temperature -65 / +175 deg.C substitutive, auxiliary circuits, (2)use of non-flammable consideration to safety when making your circuit designs, *1 : Tc=25 Deg.C material or (3)prevention against any malfunction or mishap. ABSOLUTE MAXIMUM RATINGS Symbol IDSS Gm VGS(off) P1dB GLP ID PAE IM3 Parameter Limits Test conditions Unit Min Typ Max - 9 12 Saturated drain current VDS = 3V , VGS = 0V Transconductance VDS = 3V , ID = 4.4A - 4 - S VDS = 3V , ID = 80mA -2 -3 -4 V 41.5 42.5 - dBm 8 9 - dB Drain current - 4.5 - A Power added efficiency - 33 - % -42 -45 - dBc - - 1.6 Deg.C/W Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain 3rd order IM distortion Rth(ch-c) Thermal resistance VDS=10V, ID(RF off)=4.5A, f=5.9-6.4GHz *1 *2 Delta Vf method A *1 : item -51,2 tone test,Po=31.0dBm Single Carrier Level,f=6.4GHz,Delta f=10MHz *2 : Channel-case MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4 GHz BAND 16W INTERNALLY MATCHED GaAs FET (Ta=25 Deg.C) Po,Eadd VS. Pin OUTPUT POWER Po(dBm) OUTPUT POWER P1dB(dBm) LINEAR POWER GAIN Glp(dB) P1dB,Glp VS. f POWER ADDED EFFICIENCY Eadd(%) TYPICAL CHARACTERISTICS FREQUENCY f (GHz) INPUT POWER Pin(dBm) IM3(dBc) OUTPUT POWER Po(dBm S.C.L) Po,IM3 VS. Pin INPUT POWER Pin(dBm S.C.L.) S PARAMETERS (Ta=25 Deg.C , VDS=10V , IDS=4.5A) S Parameters (TYP.) f (GHz) S11 Magn. Angle(deg.) S21 Magn. Angle(deg.) S12 Magn. Angle(deg.) S22 Magn. Angle(deg.) 5.90 0.36 82 2.99 -74 0.071 -133 0.26 80 6.00 0.35 56 2.95 -91 0.071 -151 0.32 72 6.10 0.35 34 2.91 -108 0.072 -167 0.35 65 6.20 0.35 14 2.88 -124 0.078 177 0.37 58 6.30 0.34 -4 2.81 -140 0.079 161 0.41 53 6.40 0.33 -23 2.72 -157 0.079 146 0.43 48 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004