MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : m m O U TLIN E The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. 24 +/- 0.3 2MIN FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 32W (TYP.) @ f=3.6 - 4.2 GHz High power gain GLP = 11 dB (TYP.) @ f=3.6 - 4.2GHz High power added efficiency P.A.E. = 36 % (TYP.) @ f=3.6 - 4.2GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L. 0.6 +/- 0.15 (1) 8.0 +/- 0.2 (2) 2MIN 17.4 +/- 0.2 R1.2 (3) APPLICATION item 01 : 3.6 - 4.2 GHz band power amplifier 20.4 +/- 0.2 4.3 +/- 0.4 IG 0.1 +/- 0.05 16.7 QUALITY GRADE RECOMMENDED BIAS CONDITIONS 1.4 VDS = 10 (V) ID = 8 (A) RG=25 (ohm) 2.4 +/- 0.2 item 51 : 3.6 - 4.2 GHz band digital radio communication ABSOLUTE MAXIMUM RATINGS (Ta=25deg.C) (1) gate (2) s ourc e(flange) (3)drain G F-38 < Keep safety first in your circuit designs! > Symbol Parameter Ratings Unit VGDO VGSO Gate to drain voltage -15 V making semiconductor products better and more reliable, Gate to source voltage -15 V but there is always the possibility that trouble may occur Drain current 25 A with them. Trouble with semiconductors may lead to personal IGR Reverse gate current -80 mA injury, fire or property damage. Remember to give due IGF Forward gate current 168 mA consideration to safety when making your circuit designs, Total power dissipation 150 W Tch Channel temperature 175 deg.C substitutive, auxiliary circuits, (2)use of non-flammable Tstg Storage temperature -65 / +175 deg.C material or (3)prevention against any malfunction or mishap. ID PT *1 Mitsubishi Electric Corporation puts the maximum effort into with appropriate measures such as (1)placement of *1 : Tc=25deg.C ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB GLP Parameter (Ta=25deg.C) Min. - Limits Typ. 24 Max. - A Test conditions Unit Saturated drain current VDS = 3V , VGS = 0V Transconductance VDS = 3V , ID = 8A - 8 - S Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain VDS = 3V , ID = 160mA -2 - -5 V 44 45 - dBm dB 10 11 - Drain current - 8 - A P.A.E. Power added efficiency - 36 - % IM3 *2 3rd order IM distortion -42 -45 - dBc - 0.8 1 deg.C/W ID Rth(ch-c) *3 Thermal resistance VDS=10V, ID(RF off)=8A, f=3.6 - 4.2GHz delta Vf method *2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=3.6,3.9,4.2GHz,delta f=10MHz *3 : Channel-case MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS P1dB,GLP vs. f Po, P.A.E. vs. Pin 22 VDS=10V IDS=8A 20 18 44 16 43 14 GLP 42 12 10 41 3.5 3.6 3.7 3.8 3.9 4 4.1 OUTPUT POWER Po (dBm) 45 100 VDS=10V IDS=8A f=3.9GHz 45 P1dB LINEAR POWER GAIN GLP (dB) OUTPUT POWER P1dB (dBm) 46 50 80 Po 40 60 35 40 ηadd 30 20 0 25 4.2 4.3 POWER ADDED EFFICIENCY (%) 47 20 FREQUENCY f (GHz) 25 30 35 40 INPUT POWER Pin (dBm) Po,IM3 vs. Pin 10 40 OUTPUT POWER Po (dBm S.C.L.) 38 0 Po 36 -10 34 -20 32 IM3 -30 30 -40 28 -50 26 IM3 (dBc) VDS=10V IDS=8A f1=4.20GHz f2=4.21GHz 2-tone test -60 17 19 21 23 25 27 29 INPUT POWER Pin (dBm S.C.L.) S parameters f (GHz) 3.50 3.60 3.70 3.80 3.90 4.00 4.10 4.20 4.30 ( Ta=25deg.C , VDS=10(V),IDS=8(A) ) S11 Magn. Angle(deg) 0.51 165 0.55 0.56 0.54 0.47 0.37 0.27 0.26 0.40 31 125 93 67 40 5 -42 -117 -174 S-Parameter (TYP.) S21 S12 Magn. Angle(deg) Magn. Angle(deg) 3.71 42 0.05 -21 3.82 3.84 3.81 3.86 3.87 3.83 3.64 3.25 14 -15 -41 -68 -97 -125 -156 174 0.06 0.07 0.07 0.08 0.09 0.09 0.09 0.09 MITSUBISHI ELECTRIC -52 -80 -107 -134 -162 169 141 108 Magn. 0.39 0.29 0.22 0.21 0.23 0.26 0.26 0.21 0.09 S22 Angle(deg) -29 -56 -94 -142 -177 149 122 93 63 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004