MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters (inches) OUTLINE DRAWING The MGFS45V2325 is an internally impedance matched GaAs power FET especially designed for use in 2.3~2.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. 24±0.3 (0.945±0.012) (0.024±0.006) 0.6±0.15 FEATURES Class A operation Internally matched to 50 (Ω) system High output power P1dB=30W (TYP.) @f=2.3~2.5GHz High power gain GLP=12dB (TYP.) @f=2.3~2.5GHz High power added efficiency ηadd=45% (TYP.) @f=2.3~2.5GHz Loe distortion [item -51] IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L. R1.2 20.4±0.2 (0.803±0.008) APPLICATION item 01 : 2.3~2.5GHz band power amplifier item 51 : 2.3~2.5GHz band digital radio communication 16.7 (0.658) QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS=10V ID=6.5A RG=25Ω (1) GATE (2) Source (FLANGE) (3) DRAIN GF-38 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) < Keep safety first in your circuit designs! > Symbol Parameter Ratings Unit Mitsubishi Electric Corporation puts the maximum effort into VGDO Gate to drain voltage -15 V VGSO Gate to source voltage -15 V ID Drain current 22 A IGR Reverse gate current -61 mA IGF Forward gate current 76 mA PT Total power dissipation 88 W consideration to safety when making your circuit designs, Tch Channel temperature 175 °C with appropriate measures such as (i)placement of -65 ~ +175 °C substitutive, auxiliary circuits, (ii)use of non-flammable *1 Tstg Storage temperature *1 : Tc=25°C making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due material or (iii)prevention against any malfunction or mishap. ELECTRICAL CHARACTERISTICS (Ta=25°C) Symbol Test conditions Parameter VDS=3V, ID=60mA Limits Unit Min. Typ. Max — — -5 V 44 45 — dBm 11 12 — dB VGS (off) Saturated drain current P1dB Output power at 1dB gain compression GLP Linear power gain ID Drain current — 7.5 — A ηadd Power added efficiency — 45 — % IM3 3rd order IM distortion *1 -42 -45 — dBc Rth (ch-c) Thermal resistance *2 — — 1.7 °C/W VDS=10V, ID(RF off)=6.5A, f=2.3~2.5GHz ∆Vf method *1 : item -51, 2 tone test, Po=34.5dBm Single Carrier Level, f=2.3, 2.4, 2.5GHz,∆f=5MHz *2 : Channel to case MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET TYPICAL CHARACTERISTICS P1dB,GLP vs. Freq. Po,ηadd vs. Pin 46 16 50 70 VDS=10V IDS=6.5A f=2.4GHz P1dB 45 15 45 60 Po VDS=10V IDS=6.5A 40 44 50 14 GLP 35 43 13 42 41 2.25 40 ηadd 30 30 25 20 12 2.3 2.35 2.4 2.45 2.5 11 2.55 20 10 15 Frequency (GHz) 20 25 30 Input power Pin (dBm) 35 Po,IM3 vs. Pin 40 38 0 VDS=10V IDS=6.5A f1=2.500GHz f2=2.505GHz -10 Po 36 -20 34 -30 32 -40 IM3 30 -50 28 15 -60 30 20 25 Input power Pin (dBm S.C.L.) S Parameters ( Tc=25˚C, VDS=10V, IDS=6.5A ) f (GHz) 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 Magn. 0.36 0.39 0.40 0.39 0.36 0.30 0.24 0.21 0.28 S11 Angle(deg) -168 170 150 132 112 87 53 1 -48 Magn. 4.71 4.70 4.68 4.68 4.68 4.68 4.64 4.52 4.28 S-Parameter (TYP.) S21 S12 Angle(deg) Magn. Angle(deg) 88 0.036 47 71 0.037 29 54 0.038 10 0.040 38 -7 21 0.041 -26 3 0.041 -45 -14 0.043 -63 -34 0.044 -85 -54 0.043 -103 MITSUBISHI ELECTRIC Magn. 0.30 0.26 0.23 0.22 0.22 0.23 0.24 0.25 0.25 S22 Angle(deg) -10 -27 -45 -66 -86 -105 -125 -141 -158 40