MITSUBISHI MGFC45V6472A_04

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V6472A
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC45V6472A is an internally impedance-matched
GaAs power FET especially designed for use in 6.4-7.2
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
O U TLIN E D R AW IN G U nit:m illim eters (inches)
24 +/- 0.3
FEATURES
2 M IN
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=6.4-7.2 GHz
High power gain
GLP = 8 dB (TYP.) @ f=6.4-7.2GHz
High power added efficiency
PAE = 28 % (TYP.) @ f=6.4-7.2GHz
Low distortion [item -51]
IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
0.6 +/- 0.15
(1 )
8 .0 +/- 0 .2
(2 )
2 M IN
1 7 .4 +/- 0 .2
R 1.2
(3 )
0 .1 +/- 0 .0 5
APPLICATION
16.7
4 .3 +/- 0 .4
item 01 : 6.4-7.2 GHz band power amplifier
item 51 : 6.4-7.2 GHz band digital radio communication
QUALITY GRADE
1 .4
IG
2 .4 +/- 0 .2
20.4 +/- 0.2
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 8.0 (A)
RG=25 (ohm)
G F -38
ABSOLUTE MAXIMUM RATINGS
Symbol
(1 ) G AT E
(2 ) S O U R C E (F IAN G E )
(3 ) D R AIN
Ratings
Unit
VGDO
Gate to drain voltage
-15
V
Mitsubishi Electric Corporation puts the maximum effort into
VGSO
Gate to source voltage
-15
V
making semiconductor products better and more reliable,
Drain current
25
A
but there is always the possibility that trouble may occur
IGR
Reverse gate current
-80
mA
with them. Trouble with semiconductors may lead to personal
IGF
Forward gate current
168
mA
injury, fire or property damage. Remember to give due
PT
Total power dissipation
150
W
Tch
Channel temperature
175
deg.C
with appropriate measures such as (1)placement of
-65 / +175
deg.C
substitutive, auxiliary circuits, (2)use of non-flammable
ID
Parameter
(Ta=25 deg.C)
Tstg
Storage temperature
*1 : Tc=25 deg.C
IDSS
Gm
consideration to safety when making your circuit designs,
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CARACTERISTICS
Symbol
< Keep safety first in your circuit designs! >
Parameter
(Ta=25 deg.C)
Limits
Test conditions
Unit
Min.
Typ.
Max.
Saturated drain current
VDS=3V, VGS=0V
-
24
-
A
Transconductance
VDS=3V, ID=6.4A
-
8
-
V
VGS(off) Gate to source cut-off voltage
Output power at 1dB gain
P1dB
compression
GLP
Linear power gain
PAE
Power added efficiency
IM3
3rd order IM distortion
Rth(ch-c) Thermal resistance
VDS = 3V , ID = 120mA
-
-
-5
V
44.5
45
-
dBm
7
8
-
dB
-
35
-
%
-42
-45
-
dBc
-
-
1.0
deg.C/W
VDS=10V, ID(RF off)=8.0A, f=6.4-7.2GHz
*1
*2
Delta Vf method
*1 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case
MITSUBISHI
ELECTRIC
June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V6472A
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS (Ta=25deg.C)
Po , PAE vs. Pin
P1dB ,GLP vs. f
50
VDS=10(V)
IDS=8(A)
11
45
10
GLP
44
9
43
8
42
OUTPUT POWER Po(dBm)
P1dB
46
50
VDS=10(V)
IDS=8(A)
f=6.8(GHz)
Po
45
40
40
30
35
20
PAE
30
7
10
25
6.3 6.4 6.5 6.6 6.7 6.8 6.9 7.0 7.1 7.2 7.3
0
20
25
30
35
40
POWER ADDED EFFICIECY PAE (%)
12
LINEAR POWER GAIN GLP(dB)
OUTPUT POWER P1dB (dBm)
47
45
INPUTPOWER Pin(dBm)
FREQUENCY f(GHz)
Po,IM3 vs.Pin
40
0
VDS=10(V)
IDS=8(A)
f=7.2(GHz)
Delta f=10(MHz)
Po
-10
36
-20
32
-30
-40
28
IM3
24
-50
20
-60
16
IM3 (dBc)
OUTPUT POWER Po (dBm S.C.L.)
44
-70
18
20
22
24
26
28
30
32
34
36
INPUT POWER Pin (dBm S.C.L.)
S PARAMETERS (Ta=25deg.C,VDS=10V,ID=8.0A)
f
(GHz)
6.4
6.5
6.6
6.7
6.8
6.9
7.0
7.1
7.2
Magn.
0.66
0.61
0.56
0.50
0.43
0.35
0.24
0.15
0.01
S11
Angle(deg.)
100
84
70
57
42
27
12
1
-10
Magn.
2.39
2.43
2.47
2.54
2.59
2.66
2.73
2.75
2.72
S Parameters (TYP.)
S21
Angle(deg.)
Magn.
-106
0.057
-122
0.065
-138
0.071
-154
0.079
-170
0.088
173
0.095
155
0.101
143
0.105
123
0.109
MITSUBISHI
ELECTRIC
S12
Angle(deg.)
-171
174
160
145
131
116
100
88
70
Magn.
0.32
0.34
0.35
0.35
0.34
0.31
0.27
0.24
0.20
S22
Angle(deg.)
74
64
52
40
27
12
-8
-27
-61
June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V6472A
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI
ELECTRIC
June/2004