ONSEMI MBR40H100WD

MBR40H100WT
SWITCHMODE™
Power Rectifier
100 V, 40 A
Features and Benefits
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•
•
•
•
•
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Low Forward Voltage: 0.67 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
40 A Total (20 A Per Diode Leg)
Guard−Ring for Stress Protection
This is a Pb−Free Device
SCHOTTKY BARRIER
RECTIFIER
40 AMPERES
100 VOLTS
1
2, 4
Applications
3
• Power Supply − Output Rectification
• Power Management
• Instrumentation
MARKING
DIAGRAM
Mechanical Characteristics:
•
•
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Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 4.3 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 30 Units Per Plastic Tube
MAXIMUM RATINGS
YYWW
B40H100
AKA
TO−247AC
CASE 340L
PLASTIC
YY
WW
B40H100
AKA
= Year
= Work Week
= Device Code
= Polarity Designator
Please See the Table on the Following Page
ORDERING INFORMATION
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 0
1
Device
Package
Shipping
MBR40H100WTG
TO−247
(Pb−Free)
30 Units/Rail
Publication Order Number:
MBR40H100WT/D
MBR40H100WT
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(Rated VR) TC = 150°C
IF(AV)
20
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 145°C
IFRM
40
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
200
A
TJ
+175
°C
Storage Temperature
Tstg
*65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
WAVAL
400
mJ
> 400
> 8000
V
2.0
60
°C/W
Operating Junction Temperature (Note 1)
Controlled Avalanche Energy (see test conditions in Figures 9 and 10)
ESD Ratings: Machine Model = C
Human Body Model = 3B
THERMAL CHARACTERISTICS
Maximum Thermal Resistance − Junction−to−Case
− Junction−to−Ambient
RqJC
RqJA
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 20 A, TC = 25°C)
(IF = 20 A, TC = 125°C)
(IF = 40 A, TC = 25°C)
(IF = 40 A, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 125°C)
(Rated DC Voltage, TC = 25°C)
iR
V
0.80
0.67
0.90
0.76
mA
10
0.01
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
1000
100
TJ = 150°C
10
TJ = 125°C
TJ = 25°C
1
0.1
0
0.2
0.4
0.6
1.0
0.8
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBR40H100WT
1000
100
TJ = 150°C
TJ = 125°C
10
TJ = 25°C
1
0.1
0
0.2
1.0E−01
IR, REVERSE CURRENT (AMPS)
1.0E−01
TJ = 125°C
TJ = 125°C
1.0E−04
1.0E−05
1.0E−05
TJ = 25°C
1.0E−06
TJ = 25°C
1.0E−06
1.0E−07
1.0E−07
1.0E−08
0
20
40
60
80
100
60
40
80
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
dc
25
SQUARE WAVE
15
10
5
110
20
VR, REVERSE VOLTAGE (VOLTS)
35
30
1.0E−08
0
PFO, AVERAGE POWER DISSIPATION
(WATTS)
IF, AVERAGE FORWARD CURRENT (AMPS)
TJ = 150°C
1.0E−03
1.0E−04
0
100
1.2
1.0
1.0E−02
TJ = 150°C
1.0E−03
20
0.8
Figure 2. Maximum Forward Voltage
IR, MAXIMUM REVERSE CURRENT (AMPS)
Figure 1. Typical Forward Voltage
1.0E−02
0.6
0.4
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
120
130
140
150
160
170
180
50
45
40
35
SQUARE
30
25
DC
20
15
10
5
0
0
5
10
15
20
25
30
35
40
45
TC, CASE TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
50
MBR40H100WT
10000
C, CAPACITANCE (pF)
TJ = 25°C
1000
100
10
0
20
40
80
60
100
VR, REVERSE VOLTAGE (VOLTS)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 7. Capacitance
10
1
0.1
D = 0.5
0.2
0.1
0.05
0.01
P(pk)
t1
0.01
0.001
0.000001
0.00001
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.0001
0.001
0.1
0.01
1
t1, TIME (sec)
Figure 8. Thermal Response Junction−to−Case
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4
10
100
1000
MBR40H100WT
+VDD
IL
10 mH COIL
BVDUT
VD
MERCURY
SWITCH
S1
ID
ID
IL
DUT
VDD
t0
Figure 9. Test Circuit
t1
t2
t
Figure 10. Current−Voltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
The unclamped inductive switching circuit shown in
Figure 9 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
EQUATION (1):
ǒ
BV
2
DUT
W
[ 1 LI LPK
AVAL
2
BV
–V
DUT DD
EQUATION (2):
2
W
[ 1 LI LPK
AVAL
2
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5
Ǔ
MBR40H100WT
PACKAGE DIMENSIONS
TO−247 PSI
CASE 340L−02
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
−T−
C
−B−
E
U
L
N
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
W
J
F 2 PL
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
2.20
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
20.06
20.83
5.40
6.20
4.32
5.49
−−−
4.50
3.55
3.65
6.15 BSC
2.87
3.12
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.087
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.790
0.820
0.212
0.244
0.170
0.216
−−−
0.177
0.140
0.144
0.242 BSC
0.113
0.123
H
G
D 3 PL
0.25 (0.010)
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
M
Y Q
S
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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local Sales Representative.
MBR40H100WT/D