MBR40H100WT SWITCHMODE™ Power Rectifier 100 V, 40 A Features and Benefits • • • • • • • http://onsemi.com Low Forward Voltage: 0.67 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total (20 A Per Diode Leg) Guard−Ring for Stress Protection This is a Pb−Free Device SCHOTTKY BARRIER RECTIFIER 40 AMPERES 100 VOLTS 1 2, 4 Applications 3 • Power Supply − Output Rectification • Power Management • Instrumentation MARKING DIAGRAM Mechanical Characteristics: • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 4.3 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 30 Units Per Plastic Tube MAXIMUM RATINGS YYWW B40H100 AKA TO−247AC CASE 340L PLASTIC YY WW B40H100 AKA = Year = Work Week = Device Code = Polarity Designator Please See the Table on the Following Page ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 0 1 Device Package Shipping MBR40H100WTG TO−247 (Pb−Free) 30 Units/Rail Publication Order Number: MBR40H100WT/D MBR40H100WT MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR) TC = 150°C IF(AV) 20 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 145°C IFRM 40 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 200 A TJ +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms WAVAL 400 mJ > 400 > 8000 V 2.0 60 °C/W Operating Junction Temperature (Note 1) Controlled Avalanche Energy (see test conditions in Figures 9 and 10) ESD Ratings: Machine Model = C Human Body Model = 3B THERMAL CHARACTERISTICS Maximum Thermal Resistance − Junction−to−Case − Junction−to−Ambient RqJC RqJA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (IF = 20 A, TC = 25°C) (IF = 20 A, TC = 125°C) (IF = 40 A, TC = 25°C) (IF = 40 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 125°C) (Rated DC Voltage, TC = 25°C) iR V 0.80 0.67 0.90 0.76 mA 10 0.01 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 1000 100 TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.1 0 0.2 0.4 0.6 1.0 0.8 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR40H100WT 1000 100 TJ = 150°C TJ = 125°C 10 TJ = 25°C 1 0.1 0 0.2 1.0E−01 IR, REVERSE CURRENT (AMPS) 1.0E−01 TJ = 125°C TJ = 125°C 1.0E−04 1.0E−05 1.0E−05 TJ = 25°C 1.0E−06 TJ = 25°C 1.0E−06 1.0E−07 1.0E−07 1.0E−08 0 20 40 60 80 100 60 40 80 100 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current dc 25 SQUARE WAVE 15 10 5 110 20 VR, REVERSE VOLTAGE (VOLTS) 35 30 1.0E−08 0 PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) TJ = 150°C 1.0E−03 1.0E−04 0 100 1.2 1.0 1.0E−02 TJ = 150°C 1.0E−03 20 0.8 Figure 2. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage 1.0E−02 0.6 0.4 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 120 130 140 150 160 170 180 50 45 40 35 SQUARE 30 25 DC 20 15 10 5 0 0 5 10 15 20 25 30 35 40 45 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 50 MBR40H100WT 10000 C, CAPACITANCE (pF) TJ = 25°C 1000 100 10 0 20 40 80 60 100 VR, REVERSE VOLTAGE (VOLTS) R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance 10 1 0.1 D = 0.5 0.2 0.1 0.05 0.01 P(pk) t1 0.01 0.001 0.000001 0.00001 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.0001 0.001 0.1 0.01 1 t1, TIME (sec) Figure 8. Thermal Response Junction−to−Case http://onsemi.com 4 10 100 1000 MBR40H100WT +VDD IL 10 mH COIL BVDUT VD MERCURY SWITCH S1 ID ID IL DUT VDD t0 Figure 9. Test Circuit t1 t2 t Figure 10. Current−Voltage Waveforms elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The unclamped inductive switching circuit shown in Figure 9 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive EQUATION (1): ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 BV –V DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 http://onsemi.com 5 Ǔ MBR40H100WT PACKAGE DIMENSIONS TO−247 PSI CASE 340L−02 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −T− C −B− E U L N 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K W J F 2 PL MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 2.20 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 20.06 20.83 5.40 6.20 4.32 5.49 −−− 4.50 3.55 3.65 6.15 BSC 2.87 3.12 INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.087 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.790 0.820 0.212 0.244 0.170 0.216 −−− 0.177 0.140 0.144 0.242 BSC 0.113 0.123 H G D 3 PL 0.25 (0.010) DIM A B C D E F G H J K L N P Q U W M Y Q S SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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