tm FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is in a rugged gate version ®of Fairchild Semiconductor's advanced ® PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). –11 A, –20 V. RDS(ON) = 0.014 :@ VGS = –4.5 V RDS(ON) = 0.020 :@ VGS = –2.5 V Applications • Load switch • Battery protection • Power management • Extended VGSS range (r12V) for battery applications. • Low gate charge (43nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON). • High power and current handling capability. • RoHS Compliant. D D D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage r 12 V ID Drain Current –11 A – Continuous (Note 1a) – Pulsed –50 Power Dissipation for Single Operation PD (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range W 1.0 –55 to +150 qC Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 qC/W RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 qC/W RTJC Thermal Resistance, Junction-to-Case (Note 1) 25 qC/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6576 FDS6576 13’’ 12mm 2500 units 2006 Fairchild Semiconductor Corporation FDS6576 Rev E3 FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET December 2006 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics –20 V BVDSS 'BVDSS 'TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = –250 PA Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 PA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA –1.5 V On Characteristics –13 ID = –250 PA, Referenced to 25qC mV/qC (Note 2) –0.6 –0.83 VGS(th) 'VGS(th) 'TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = –4.5 V, ID = –11 A VGS = –2.5 V, ID = –8.8 A VGS = –4.5 V, ID = –11 A, TJ =125qC VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –4.5 V, ID = –11 A 50 S VDS = –10 V, f = 1.0 MHz V GS = 0 V, 4044 pF VDS = VGS, ID = –250 PA ID = –250 PA, Referenced to 25qC 3.5 8.2 11.5 11.1 mV/qC 14 20 23 –25 m: A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge 955 pF 504 pF (Note 2) VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 : VDS = –10 V, VGS = –4.5 V ID = –11 A, 18 32 ns 17 31 ns 124 198 ns 79 126 ns 43 60 nC 7 nC 12 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.1 A Voltage (Note 2) –0.66 –2.1 A –1.2 V Notes: 1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0% FDS6576 Rev E3 FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET Electrical Characteristics 2.25 50 4.5V 6.0V ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 40 3.5V 3.0V 30 20 10 2.5V 2 1.75 VGS = 3.0V 1.5 3.5V 1.25 4.5V 6.0V 10V 1 0.75 0 0 0.5 1 1.5 2 0 2.5 10 Figure 1. On-Region Characteristics. 30 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 0.03 ID = 6 A ID = 12A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 0.025 0.02 TA = 125oC 0.015 0.01 TA = 25oC 0.6 -50 -25 0 25 50 75 125 100 0.005 150 2 TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = -55oC VDS = 5V 25oC IS, REVERSE DRAIN CURRENT (A) 50 ID, DRAIN CURRENT (A) 10 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 125oC 40 30 20 10 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6576 Rev E3 FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET Typical Characteristics 3000 VDS = 10V ID = 12A 15V f = 1MHz VGS = 0 V 2500 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 4 2 CISS 2000 1500 1000 COSS 500 CRSS 0 0 0 5 10 15 20 25 30 35 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 25 30 P(pk), PEAK TRANSIENT POWER (W) 50 100⼡ RDS(ON) LIMIT ID, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics. 100 1ms 10ms 10 100ms 1s 10s DC 1 VGS = 10V SINGLE PULSE RTJA = 125oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 SINGLE PULSE RTJA = 125Ⱌ /W TA = 25Ⱌ 40 30 20 10 0 0.001 100 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RTJA(t) = r(t) + RTJA RTJA = 125 Ⱌ /W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * RTJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6576 Rev E3 FDS6576 P-Channel 2.5V Specified PowerTrench MOSFET Typical Characteristics TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 FDS6576 Rev E3