FDS8449 40V N-Channel PowerTrench® MOSFET General Description Features These N-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. • Inverter • Power Supplies D D DD • High power handling capability in a widely used surface mount package • RoHS compliant DD DD G SS G S SS S SO-8 Pin 1 SO-8 Absolute Maximum Ratings Symbol RDS(on) = 29mΩ @ VGS = 10V RDS(on) = 36mΩ @ VGS = 4.5V Application • 7.6 A, 40V 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 40 V VGSS Gate-Source Voltage ±20 V ID Drain Current 7.6 A – Continuous (Note 1a) – Pulsed 50 Power Dissipation for Single Operation PD TJ, TSTG (Note 1a) 2.5 (Note 1b) 1 Operating and Storage Junction Temperature Range W –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 125 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS8449 FDS8449 13’’ 12mm 2500 units ©2005 Fairchild Semiconductor Corporation FDS8449 Rev B(W) www.fairchildsemi.com FDS8449 40V N-Channel PowerTrench®MOSFET December 2005 Symbol TA = 25°C unless otherwise noted Parameter Drain-Source Avalanche Ratings EAS Drain-Source Avalanche Energy IAS Drain-Source Avalanche Current Test Conditions Min Typ Max Units (Note 3) VDD = 40 V, ID = 7.3 A, L = 1 mH 27 mJ 7.3 A Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS 40 V VGS = 0 V, Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 μA Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA 3 V On Characteristics VGS(th) ID = 250 μA Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C 34 mV/°C (Note 2) ID = 250 μA VDS = VGS, ID = 250 μA, Referenced to 25°C ΔVGS(th) ΔTJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance gFS Forward Transconductance 1 1.9 –5 mV/°C VGS = 10 V, ID = 7.6 A ID = 6.8 A VGS = 4.5 V, VGS= 10 V, ID = 7.6 A, TJ=125°C 21 26 29 29 36 43 VDS = 10 V, ID = 7.6 A 21 S VDS = 20 V, f = 1.0 MHz V GS = 0 V, 760 pF 100 pF 60 pF 1.2 Ω mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance f = 1.0 MHz Switching Characteristics td(on) (Note 2) Turn–On Delay Time VDD = 20 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 9 18 ns tr Turn–On Rise Time 5 10 ns td(off) Turn–Off Delay Time 23 17 ns tf Turn–Off Fall Time 3 6 ns Qg Total Gate Charge 7.7 11 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 20 V, VGS = 5 V ID = 7.6 A, 2.4 nC 2.8 nC Drain–Source Diode Characteristics trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VSD VGS = 0 V, IS = 2.1 A IF = 7.6 A, diF/dt = 100 A/µs (Note 2) 0.76 1.2 V 17 nS 7 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2 Test: Pulse Width < 300μs, Duty Cycle < 2.0% 3. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device. FDS8449 Rev A(W) www.fairchildsemi.com FDS8449 40V N-Channel PowerTrench®MOSFET Electrical Characteristics 3 20 VGS = 3.0V 4.0V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V ID, DRAIN CURRENT (A) 16 6.0V 12 4.5V 8 3.0V 4 0 2.6 2.2 1.8 3.5V 1.4 4.0V 6.0V 0.5 1 1.5 2 2.5 0 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 8 12 ID, DRAIN CURRENT (A) 16 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.07 1.6 ID = 7.6A VGS = 10V ID = 3.5A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10V 0.6 0 1.4 1.2 1 0.8 0.6 0.06 0.05 0.04 o TA = 125 C 0.03 o TA = 25 C 0.02 0.01 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 100 IS, REVERSE DRAIN CURRENT (A) VDS = 10V ID, DRAIN CURRENT (A) 4.5V 1 15 10 o TA = 125 C o -55 C 5 VGS = 0V 10 o TA = 125 C 1 o 25 C 0.1 o -55 C 0.01 0.001 o 25 C 0.0001 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. FDS8449 Rev A(W) 3.5 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.fairchildsemi.com FDS8449 40V N-Channel PowerTrench®MOSFET Typical Characteristics 1000 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 7.6 A f = 1 MHz VGS = 0 V 30V VDS = 10V 800 CAPACITANCE (pF) 8 20V 6 4 Ciss 600 400 Coss 2 200 0 0 Crss 0 4 8 Qg, GATE CHARGE (nC) 12 0 16 Figure 7. Gate Charge Characteristics. 35 40 P(pk), PEAK TRANSIENT POWER (W) 50 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 100 100μ 1ms 10ms 100ms 1s 10 10s 1 DC VGS = 10V SINGLE PULSE o RθJA = 125 C/W 0.1 o TA = 25 C 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 40 30 20 10 100 Figure 9. Maximum Safe Operating Area. 0.1 1 t1, TIME (sec) 10 100 1000 100 30 20 10 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 11. Single Pulse Maximum Peak Current. 1000 I(AS), AVALANCHE CURRENT (A) SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 FDS8449 Rev A(W) 0.01 Figure 10. Single Pulse Maximum Power Dissipation. 50 0 0.001 SINGLE PULSE RθJA = 125°C/W TA = 25°C 0 0.001 0.01 I(pk), PEAK TRANSIENT CURRENT (A) 5 o TJ = 25 C 10 1 0.01 0.1 1 tAV, TIME IN AVANCHE(ms) 10 Figure 12. Unclamped Inductive Switching Capability. www.fairchildsemi.com FDS8449 40V N-Channel PowerTrench®MOSFET Typical Characteristics r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 0.1 o RθJA = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 25. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17