FAIRCHILD FDS6673AZ

FDS6673AZ
30 Volt P-Channel PowerTrench® MOSFET
Features
General Description
■ –14.5 A, –30 V.
RDS(ON) = 7.2 mΩ @ VGS = –10 V
RDS(ON) = 11 mΩ @ VGS = – 4.5 V
This P-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers, and
battery chargers.
■ Extended VGSS range (–25V) for battery applications
■ ESD protection diode (note 3)
■ High performance trench technology for extremely low
RDS(ON)
■ High power and current handling capability
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at
very high frequencies), and DC/DC power supply designs with
higher overall efficiency.
D
D
D
D
SO-8
S
S
S
G
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
PD
Power Dissipation for Single Operation
– Continuous
Ratings
Units
–30
V
(Note 1a)
– Pulsed
TJ, TSTG
+25
V
–14.5
A
–50
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
1.0
Operating and Storage Junction Temperature Range
W
–55 to +175
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6673AZ
FDS6673AZ
13’’
12mm
2500 units
©2005 Fairchild Semiconductor Corporation
FDS6673AZ Rev. C(W)
1
www.fairchildsemi.com
FDS6673AZ 30 Volt P-Channel PowerTrench® MOSFET
April 2005
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
∆BVDSS
∆ TJ
Breakdown Voltage Temperature
Coefficient
ID = –250 µA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = –24 V, VGS = 0 V
–1
µA
IGSS
Gate–Body Leakage
VGS = ±20 V, VDS = 0 V
±10
µA
–30
V
mV/°C
–25
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
∆VGS(th)
∆ TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
5.8
RDS(on)
Static Drain–Source
On–Resistance
VGS = –10 V, ID = –14.5 A
VGS = –4.5 V, ID = –12 A
VGS = –4.5 V, ID = –14.5A, TJ = 125°C
6.0
8.8
7.8
gFS
Forward Transconductance
VDS = –5 V, ID = –14.5 A
50
VDS = –15 V, VGS = 0 V,
f = 1.0 MHz
4480
pF
1190
pF
615
pF
–1
–1.6
–3
V
mV/°C
7.2
11
10.4
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
3.8
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
22
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = –15 V, ID = –14.5 A,
VGS = –10 V
35
ns
8
16
ns
134
214
ns
79
126
ns
84
118
nC
12
nC
19
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward Voltage
VGS = 0 V, IS = –2.1 A
tRR
Reverse Recovery Time
QRR
Reverse Recovery Charge
IF = –14.5 A,
diF/dt = 100 A/µs
–2.1
(Note 2)
(Note 2)
–0.7
–1.2
A
V
44
ns
29
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W (10 sec) 62.5°
C/W steady state when
mounted on a 1 in2 pad
of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
2
FDS6673AZ Rev. C(W)
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FDS6673AZ 30 Volt P-Channel PowerTrench® MOSFET
Electrical Characteristics TA = 25°C unless otherwise noted
80
3.8
-4.5V
-4.0V
-ID, DRAIN CURRENT (A)
-6.0V
RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -10V
-3.5V
60
40
-3.0V
20
0
3
V GS = - 3.0V
2.6
2.2
-3.5V
1.8
-4.0V
-4.5V
1.4
-5.0V
0.5
1
1.5
2
-10V
0
20
40
60
80
-V DS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.7
0.02
ID = -14.5A
VGS = -10V
I D = -7.3A
RDS(ON), ON-RESISTANCE (OHM)
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.02
0.02
TA = 125 o C
0.01
0.01
T A = 25 oC
0.00
-50
-25
0
25
50
75
100
125
150
175
2
4
T J, JUNCTION TEMPERATURE (°C)
6
8
10
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
80
100
VGS = 0V
-IS , REVERSE DRAIN CURRENT (A)
25°C
TA = -55°C
VDS = -5V
-ID, DRAIN CURRENT (A)
-6.0V
1
0.6
0
RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.4
125°·C
60
40
20
0
10
T A = 125°C
1
25°C
0.1
-55°C
0.01
0.001
1.5
2
2.5
3
3.5
0
4
-V GS, GATE TO SOURCE VOLTAGE (V)
0.4
0.6
0.8
1
1.2
-V SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
FDS6673AZ Rev. C(W)
0.2
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FDS6673AZ 30 Volt P-Channel PowerTrench® MOSFET
Typical Characteristics
6000
I D = -14.5A
VDS = -10V
5000
8
-20V
6
4
4000
3000
2000
COSS
2
1000
CRSS
0
0
0
10
20
30
40
50
60
70
80
90
0
10
15
20
25
30
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
50
100 µs
RDS(ON) LIMIT
1ms
10ms
10
10s
1
100ms
1s
DC
VGS = -10V
SINGLE PULSE
0.1
RθJA = 125°C/W
TA = 25°C
0.01
0.01
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
5
Q g, GATE CHARGE (nC)
100
-ID, DRAIN CURRENT (A)
f = 1 MHz
VGS = 0 V
CISS
-15V
CAPACITANCE (pF)
-V GS, GATE-SOURCE VOLTAGE (V)
10
0.1
1
10
SINGLE PULSE
RθJA = 125°C/W
T A = 25°C
40
30
20
10
0
0.001
100
0.01
0.1
1
10
100
1000
-V DS , DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
D = 0.5
R θJA (t) = r(t) * R θJA
0.2
R θJA = 125°C/W
0.1
P(pk)
0.05
t1
0.02
t2
T J - T A = P * R θJA (t)
Duty Cycle, D = t1/t 2
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
4
FDS6673AZ Rev. C(W)
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FDS6673AZ 30 Volt P-Channel PowerTrench® MOSFET
Typical Characteristics
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
5
FDS6673AZ Rev. C(W)
www.fairchildsemi.com
FDS6673AZ 30 Volt P-Channel PowerTrench® MOSFET
TRADEMARKS