LMC660EP CMOS Quad Operational Amplifier General Description Features The LMC660EP CMOS Quad operational amplifier is ideal for operation from a single supply. It operates from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain into realistic loads (2 kΩ and 600Ω) are all equal to or better than widely accepted bipolar equivalents. This chip is built with National’s advanced Double-Poly Silicon-Gate CMOS process. n n n n n n n n n n n See the LMC662 datasheet for a dual CMOS operational amplifier with these same features. ENHANCED PLASTIC • Extended Temperature Performance of −40˚C to +85˚C • • • • • Baseline Control - Single Fab & Assembly Site Process Change Notification (PCN) Qualification & Reliability Data Solder (PbSn) Lead Finish is standard Enhanced Diminishing Manufacturing Sources (DMS) Support Rail-to-rail output swing Specified for 2 kΩ and 600Ω loads High voltage gain: 126 dB Low input offset voltage: 3 mV Low offset voltage drift: 1.3 µV/˚C Ultra low input bias current: 2 fA Input common-mode range includes V− Operating range from +5V to +15V supply ISS = 375 µA/amplifier; independent of V+ Low distortion: 0.01% at 10 kHz Slew rate: 1.1 V/µs Applications n n n n n n High-impedance buffer or preamplifier Precision current-to-voltage converter Long-term integrator Sample-and-Hold circuit Selected Military Applications Selected Avionics Applications Ordering Information PART NUMBER VID PART NUMBER NS PACKAGE NUMBER (Note 3) LMC660AIMEP V62/04749-01 M14A (Notes 1, 2) TBD TBD Note 1: For the following (Enhanced Plastic) version, check for availability: LMC660AIMXEP, LMC660AINEP. Parts listed with an "X" are provided in Tape & Reel and parts without an "X" are in Rails. Note 2: FOR ADDITIONAL ORDERING AND PRODUCT INFORMATION, PLEASE VISIT THE ENHANCED PLASTIC WEB SITE AT: www.national.com/ mil Note 3: Refer to package details under Physical Dimensions © 2004 National Semiconductor Corporation DS201145 www.national.com LMC660EP CMOS Quad Operational Amplifier December 2004 LMC660AEP Connection Diagram 14-Pin DIP/SO LMC660EP Circuit Topology (Each Amplifier) 20114504 20114501 www.national.com 2 Current at Power Supply Pin If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Power Dissipation (Note 5) Junction Temperature 150˚C ESD tolerance (Note 11) 1000V ± Supply Voltage Differential Input Voltage Supply Voltage 16V Output Short Circuit to V+ (Note 14) Output Short Circuit to V− (Note 4) Operating Ratings Temperature Range −40˚C ≤ TJ ≤ +85˚C LMC660EP Lead Temperature (Soldering, 10 sec.) Supply Voltage Range 260˚C Storage Temp. Range Voltage at Input/Output Pins 35 mA Power Dissipation −65˚C to +150˚C + (V ) + 0.3V, (V ) − 0.3V 14-Pin Molded DIP ± 18 mA ± 5 mA Current at Input Pin (Note 12) Thermal Resistance (θJA) (Note 13) − Current at Output Pin 4.75V to 15.5V 85˚C/W 14-Pin SO 115˚C/W DC Electrical Characteristics Unless otherwise specified, all limits guaranteed for TJ = 25˚C. Boldface limits apply at the temperature extremes. V+ = 5V, V− = 0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified. (Note 15) Parameter Conditions Input Offset Voltage Typ (Note 7) Limit (Note 7) 1 3 3.3 Input Offset Voltage 1.3 Units mV max µV/˚C Average Drift Input Bias Current 0.002 pA 4 Input Offset Current 0.001 pA 2 >1 Input Resistance Common Mode 0V ≤ VCM ≤ 12.0V Rejection Ratio max max TeraΩ 70 dB V+ = 15V 68 min Positive Power Supply 5V ≤ V+ ≤ 15V 70 dB Rejection Ratio VO = 2.5V 68 min Negative Power Supply 0V ≤ V− ≤ −10V 84 dB 83 83 94 Rejection Ratio Input Common-Mode V+ = 5V & 15V Voltage Range For CMRR ≥ 50 dB −0.4 V+ − 1.9 Large Signal Voltage Gain RL = 2 kΩ (Note 8) 2000 Sourcing Sinking 500 3 83 min −0.1 V 0 max V+ − 2.3 V V+ − 2.5 min 440 V/mV 400 min 180 V/mV 120 min www.national.com LMC660AEP Absolute Maximum Ratings (Note 6) LMC660AEP DC Electrical Characteristics Unless otherwise specified, all limits guaranteed for TJ = 25˚C. Boldface limits apply at the temperature extremes. V+ = 5V, V− = 0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified. (Note 15) (Continued) Parameter Conditions Typ (Note 7) RL = 600Ω (Note 8) 1000 Sourcing Output Swing 200 min 100 V/mV 60 min V+ = 5V 4.87 4.82 V 4.79 min V+ = 5V 4.61 RL = 600Ω to V+/2 0.30 V+ = 15V 14.63 V+ = 15V min 0.50 V 0.56 max 0.26 0.35 V 0.40 max 13.90 13.35 V 13.15 min V+ = 5V 21 40 V+ = 15V 1.16 V 1.32 max 16 mA 14 min 16 mA 14 min 28 mA 25 min 28 mA (Note 14) 24 min All Four Amplifiers 2.2 mA 2.6 max Sinking, VO = 13V 39 1.5 VO = 1.5V www.national.com V 4.31 V 22 Sourcing, VO = 0V 4.41 min 0.79 Sinking, VO = 5V V max 14.44 RL = 600Ω to V+/2 Sourcing, VO = 0V 0.15 0.17 14.50 RL = 2 kΩ to V+/2 Supply Current V/mV 250 0.10 Output Current 220 Units Sinking RL = 2 kΩ to V+/2 Output Current Limit (Note 7) 4 Parameter Slew Rate Conditions (Note 9) Typ (Note 7) Limit (Note 7) 1.1 0.8 0.6 Units V/µs min Gain-Bandwidth Product 1.4 MHz Phase Margin 50 Deg Gain Margin 17 dB dB Amp-to-Amp Isolation (Note 10) 130 Input Referred Voltage Noise F = 1 kHz 22 Input Referred Current Noise F = 1 kHz 0.0002 Total Harmonic Distortion F = 10 kHz, AV = −10 RL = 2 kΩ, VO = 8 VPP V+ = 15V 0.01 % Note 4: Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature and/or multiple Op Amp shorts can result in exceeding the maximum allowed junction temperature of 150˚C. Output currents in excess of ± 30 mA over long term may adversely affect reliability. Note 5: The maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(max) − TA)/θJA. Note 6: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Note 7: Typical values represent the most likely parametric norm. Limits are guaranteed by testing or correlation. Note 8: V+ = 15V, VCM = 7.5V and RL connected to 7.5V. For Sourcing tests, 7.5V ≤ VO ≤ 11.5V. For Sinking tests, 2.5V ≤ VO ≤ 7.5V. Note 9: V+ = 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates. Note 10: Input referred. V+ = 15V and RL = 10 kΩ connected to V+/2. Each amp excited in turn with 1 kHz to produce VO = 13 VPP. Note 11: Human body model, 1.5 kΩ in series with 100 pF. Note 12: For operating at elevated temperatures the device must be derated based on the thermal resistance θJA with PD = (TJ − TA)/θJA. Note 13: All numbers apply for packages soldered directly into a PC board. Note 14: Do not connect output to V+ when V+ is greater than 13V or reliability may be adversely affected. Note 15: "Testing and other quality control techniques are used to the extent deemed necessary to ensure product performance over the specified temperature range. Product may not necessarily be tested across the full temperature range and all parameters may not necessarily be tested. In the absence of specific PARAMETRIC testing, product performance is assured by characterization and/or design." 5 www.national.com LMC660AEP AC Electrical Characteristics Unless otherwise specified, all limits guaranteed for TJ = 25˚C. Boldface limits apply at the temperature extremes. V+ = 5V, V− = 0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified. (Note 15) LMC660AEP Typical Performance Characteristics VS = ± 7.5V, TA = 25˚C unless otherwise specified Supply Current vs Supply Voltage Offset Voltage 20114525 20114524 Output Characteristics Current Sinking Input Bias Current 20114526 20114527 Output Characteristics Current Sourcing Input Voltage Noise vs Frequency 20114528 www.national.com 20114529 6 (Continued) Open-Loop Frequency Response CMRR vs Frequency 20114530 20114531 Frequency Response vs Capacitive Load Non-Inverting Large Signal Pulse Response 20114533 20114532 Stability vs Capacitive Load Stability vs Capacitive Load 20114534 20114535 Note: Avoid resistive loads of less than 500Ω, as they may cause instability. used; instead, the output is taken directly from the output of the integrator, to allow rail-to-rail output swing. Since the buffer traditionally delivers the power to the load, while maintaining high op amp gain and stability, and must withstand shorts to either rail, these tasks now fall to the integrator. Application Hints AMPLIFIER TOPOLOGY The topology chosen for the LMC660EP, shown in Figure 1, is unconventional (compared to general-purpose op amps) in that the traditional unity-gain buffer output stage is not 7 www.national.com LMC660AEP Typical Performance Characteristics VS = ±7.5V, TA = 25˚C unless otherwise specified LMC660AEP Application Hints However, if the feedback pole is less than approximately 6 to 10 times the “ideal” −3 dB frequency, a feedback capacitor, CF, should be connected between the output and the inverting input of the op amp. This condition can also be stated in terms of the amplifier’s low-frequency noise gain: To maintain stability a feedback capacitor will probably be needed if (Continued) As a result of these demands, the integrator is a compound affair with an embedded gain stage that is doubly fed forward (via Cf and Cff) by a dedicated unity-gain compensation driver. In addition, the output portion of the integrator is a push-pull configuration for delivering heavy loads. While sinking current the whole amplifier path consists of three gain stages with one stage fed forward, whereas while sourcing the path contains four gain stages with two fed forward. where is the amplifier’s low-frequency noise gain and GBW is the amplifier’s gain bandwidth product. An amplifier’s lowfrequency noise gain is represented by the formula 20114504 regardless of whether the amplifier is being used in inverting or non-inverting mode. Note that a feedback capacitor is more likely to be needed when the noise gain is low and/or the feedback resistor is large. If the above condition is met (indicating a feedback capacitor will probably be needed), and the noise gain is large enough that: FIGURE 1. LMC660EP Circuit Topology (Each Amplifier) The large signal voltage gain while sourcing is comparable to traditional bipolar op amps, even with a 600Ω load. The gain while sinking is higher than most CMOS op amps, due to the additional gain stage; however, under heavy load (600Ω) the gain will be reduced as indicated in the Electrical Characteristics. COMPENSATING INPUT CAPACITANCE The high input resistance of the LMC660EP op amps allows the use of large feedback and source resistor values without losing gain accuracy due to loading. However, the circuit will be especially sensitive to its layout when these large-value resistors are used. Every amplifier has some capacitance between each input and AC ground, and also some differential capacitance between the inputs. When the feedback network around an amplifier is resistive, this input capacitance (along with any additional capacitance due to circuit board traces, the socket, etc.) and the feedback resistors create a pole in the feedback path. In the following General Operational Amplifier circuit, the frequency of this pole is Figure 2 the following value of feedback capacitor is recommended: If the feedback capacitor should be: where CS is the total capacitance at the inverting input, including amplifier input capcitance and any stray capacitance from the IC socket (if one is used), circuit board traces, etc., and RP is the parallel combination of RF and RIN. This formula, as well as all formulae derived below, apply to inverting and non-inverting op-amp configurations. When the feedback resistors are smaller than a few kΩ, the frequency of the feedback pole will be quite high, since CS is generally less than 10 pF. If the frequency of the feedback pole is much higher than the “ideal” closed-loop bandwidth (the nominal closed-loop bandwidth in the absence of CS), the pole will have a negligible effect on stability, as it will add only a small amount of phase shift. www.national.com Note that these capacitor values are usually significant smaller than those given by the older, more conservative formula: 8 LMC660AEP Application Hints (Continued) 20114505 20114506 CS consists of the amplifier’s input capacitance plus any stray capacitance from the circuit board and socket. CF compensates for the pole caused by CS and the feedback resistors. FIGURE 3. Rx, Cx Improve Capacitive Load Tolerance Capacitive load driving capability is enhanced by using a pull up resistor to V+ (Figure 4). Typically a pull up resistor conducting 500 µA or more will significantly improve capacitive load responses. The value of the pull up resistor must be determined based on the current sinking capability of the amplifier with respect to the desired output swing. Open loop gain of the amplifier can also be affected by the pull up resistor (see Electrical Characteristics). FIGURE 2. General Operational Amplifier Circuit Using the smaller capacitors will give much higher bandwidth with little degradation of transient response. It may be necessary in any of the above cases to use a somewhat larger feedback capacitor to allow for unexpected stray capacitance, or to tolerate additional phase shifts in the loop, or excessive capacitive load, or to decrease the noise or bandwidth, or simply because the particular circuit implementation needs more feedback capacitance to be sufficiently stable. For example, a printed circuit board’s stray capacitance may be larger or smaller than the breadboard’s, so the actual optimum value for CF may be different from the one estimated using the breadboard. In most cases, the values of CF should be checked on the actual circuit, starting with the computed value. 20114523 CAPACITIVE LOAD TOLERANCE Like many other op amps, the LMC660EP may oscillate when its applied load appears capacitive. The threshold of oscillation varies both with load and circuit gain. The configuration most sensitive to oscillation is a unity-gain follower. See Typical Performance Characteristics. The load capacitance interacts with the op amp’s output resistance to create an additional pole. If this pole frequency is sufficiently low, it will degrade the op amp’s phase margin so that the amplifier is no longer stable at low gains. As shown in Figure 3, the addition of a small resistor (50Ω to 100Ω) in series with the op amp’s output, and a capacitor (5 pF to 10 pF) from inverting input to output pins, returns the phase margin to a safe value without interfering with lowerfrequency circuit operation. Thus larger values of capacitance can be tolerated without oscillation. Note that in all cases, the output will ring heavily when the load capacitance is near the threshold for oscillation. FIGURE 4. Compensating for Large Capacitive Loads with a Pull Up Resistor PRINTED-CIRCUIT-BOARD LAYOUT FOR HIGH-IMPEDANCE WORK It is generally recognized that any circuit which must operate with less than 1000 pA of leakage current requires special layout of the PC board. When one wishes to take advantage of the ultra-low bias current of the LMC662, typically less than 0.04 pA, it is essential to have an excellent layout. Fortunately, the techniques for obtaining low leakages are quite simple. First, the user must not ignore the surface leakage of the PC board, even though it may sometimes appear acceptably low, because under conditions of high humidity or dust or contamination, the surface leakage will be appreciable. To minimize the effect of any surface leakage, lay out a ring of foil completely surrounding the LMC660EP’s inputs and the terminals of capacitors, diodes, conductors, resistors, relay terminals, etc. connected to the op-amp’s inputs. See Figure 5. To have a significant effect, guard rings should be placed on both the top and bottom of the PC board. This PC foil must then be connected to a voltage which is at the same voltage as the amplifier inputs, since no leakage current can flow between two points at the same potential. For example, a PC board trace-to-pad resistance of 1012Ω, which is normally considered a very large resistance, could leak 5 pA if the trace were a 5V bus adjacent to the pad of an input. This would cause a 100 times degradation from the LMC660EP’s actual performance. However, if a guard ring is held within 5 mV of the inputs, then even a resistance of 1011Ω would 9 www.national.com LMC660AEP Application Hints (Continued) cause only 0.05 pA of leakage current, or perhaps a minor (2:1) degradation of the amplifier’s performance. See Figure 6a, Figure 6b, Figure 6c for typical connections of guard rings for standard op-amp configurations. If both inputs are active and at high impedance, the guard can be tied to ground and still provide some protection; see Figure 6d. 20114517 (a) Inverting Amplifier 20114518 (b) Non-Inverting Amplifier 20114516 FIGURE 5. Example, using the LMC660AIMEP, of Guard Ring in P.C. Board Layout 20114519 (c) Follower 20114520 (d) Howland Current Pump FIGURE 6. Guard Ring Connections The designer should be aware that when it is inappropriate to lay out a PC board for the sake of just a few circuits, there is another technique which is even better than a guard ring on a PC board: Don’t insert the amplifier’s input pin into the board at all, but bend it up in the air and use only air as an insulator. Air is an excellent insulator. In this case you may have to forego some of the advantages of PC board construction, but the advantages are sometimes well worth the effort of using point-to-point up-in-the-air wiring. See Figure 7. www.national.com 10 (Continued) A suitable capacitor for C2 would be a 5 pF or 10 pF silver mica, NPO ceramic, or air-dielectric. When determining the magnitude of Ib−, the leakage of the capacitor and socket must be taken into account. Switch S2 should be left shorted most of the time, or else the dielectric absorption of the capacitor C2 could cause errors. Similarly, if S1 is shorted momentarily (while leaving S2 shorted) where Cx is the stray capacitance at the + input. 20114521 (Input pins are lifted out of PC board and soldered directly to components. All other pins connected to PC board.) FIGURE 7. Air Wiring Bias Current Testing The test method of Figure 8 is appropriate for bench-testing bias current with reasonable accuracy. To understand its operation, first close switch S2 momentarily. When S2 is opened, then 20114522 FIGURE 8. Simple Input Bias Current Test Circuit 11 www.national.com LMC660AEP Application Hints LMC660AEP Typical Single-Supply Applications Sine-Wave Oscillator (V+ = 5.0 VDC) Additional single-supply applications ideas can be found in the LM324 datasheet. The LMC660EP is pin-for-pin compatible with the LM324 and offers greater bandwidth and input resistance over the LM324. These features will improve the performance of many existing single-supply applications. Note, however, that the supply voltage range of the LMC660EP is smaller than that of the LM324. Low-Leakage Sample-and-Hold 20114509 Oscillator frequency is determined by R1, R2, C1, and C2: fosc = 1/2πRC, where R = R1 = R2 and C = C1 = C2. 20114507 Instrumentation Amplifier This circuit, as shown, oscillates at 2.0 kHz with a peak-topeak output swing of 4.5V. 20114508 If R1 = R5, R3 = R6, and R4 = R7; then ∴ AV ≈100 for circuit shown. For good CMRR over temperature, low drift resistors should be used. Matching of R3 to R6 and R4 to R7 affect CMRR. Gain may be adjusted through R2. CMRR may be adjusted through R7. www.national.com 12 LMC660AEP Typical Single-Supply Applications 10 Hz High-Pass Filter (V+ = 5.0 VDC) (Continued) 1 Hz Square-Wave Oscillator 20114513 fc = 10 Hz d = 0.895 Gain = 1 2 dB passband ripple 1 Hz Low-Pass Filter (Maximally Flat, Dual Supply Only) 20114510 Power Amplifier 20114514 fc = 1 Hz d = 1.414 20114511 Gain = 1.57 10 Hz Bandpass Filter High Gain Amplifier with Offset Voltage Reduction 20114512 fO = 10 Hz Q = 2.1 Gain = −8.8 20114515 Gain = −46.8 Output offset voltage reduced to the level of the input offset voltage of the bottom amplifier (typically 1 mV). 13 www.national.com LMC660AEP Physical Dimensions inches (millimeters) unless otherwise noted Small Outline Dual-In-Line Pkg. (M) NS Package Number M14A www.national.com 14 LMC660EP CMOS Quad Operational Amplifier Physical Dimensions inches (millimeters) unless otherwise noted (Continued) Molded Dual-In-Line Pkg. 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