SM6K2 Transistors 4V Drive Nch+Nch MOS FET SM6K2 zExternal dimensions (Unit : mm) SMT6 (5) (6) (3) (2) (1) 1.6 (4) T110 Basic ordering unit (pieces) 3000 Each lead has same dimensions Abbreviated symbol : K2 (4) (5) (6) ∗1 ∗2 SM6K2 (1) TR1 Drain (2) TR2 Gate (3) TR2 Source (4) TR2 Drain (5) TR1 Gate (6) TR1 Source ∗2 ∗1 (3) (2) (1) ∗1 Gate Protection Diode ∗2 Body Diode ∗ A protection diode has been built in between the gate zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for the Tr1 and Tr2.> and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are exceeded. Symbol Limits Unit V Drain-source voltage VDSS 60 Gate-source voltage VGSS ±20 V Continuous ID 200 mA Pulsed IDP 800 mA Continuous IDR Pulsed IDRP ∗1 PD ∗2 Total power dissipation 0.15 0.3 Taping Code Drain reverse current 2.8 0.95 zEquivalent circuit Package Parameter 0.8 0.95 1pin mark zPackaging specifications Drain current 1.1 1.9 zFeatures 1) Two RHU002N06 chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating mutual interference. 4) Mounting cost and area can be cut in half. Type 2.9 0.3Min. zStructure Silicon N-channel MOSFET transistor ∗1 200 mA 800 mA 300 mW / TOTAL 200 mW / ELEMENT Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits Unit 416.7 625 °C / W / TOTAL °C / W / ELEMENT ∗ With each pin mounted on the recommended lands. Rev.B 1/4 SM6K2 Transistors zElectrical characteristics (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Symbol Min. Typ. Max. Unit IGSS − − ±10 µA VGS=±20V, VDS=0V V (BR) DSS 60 − − V ID=1mA, VGS=0V IDSS − − 1 µA VDS=60V, VGS=0V VGS (th) 1 − 2.5 V VDS=10V, ID=1mA − 1.7 2.4 − 2.8 4.0 Drain-source on-state resistance RDS (on) ∗ ∗ Ω Test Conditions ID=200mA, VGS=10V ID=200mA, VGS=4V 0.1 − − S VDS=10V, ID=200mA Input capacitance Ciss − 15 − pF Output capacitance Coss − 8 − pF Reverse transfer capacitance Crss VDS=10V VGS=0V f=1MHz Forward transfer admittance Turn-on delay time l Yfs l − 4 − pF ∗ − 6 − ns tr ∗ − 5 − ns td (off) ∗ − 12 − ns ∗ − 95 − ns td (on) Rise time Turn-off delay time Fall time tf ∗ ID=100mA, VDD 30V VGS=10V RL=300Ω RG =10Ω Total gate charge Qg − 2.2 4.4 nC Gate-source charge Qgs ∗ − 0.6 − nC Gate-drain charge Qgd ∗ − 0.3 − nC Unit V Conditions IS=200mA, VGS=0V VDD 30V VGS=10V ID=200mA ∗ Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Forward voltage Symbol VSD Min. − Typ. − Max. 1.2 Rev.B 2/4 SM6K2 Transistors zElectrical characteristic curves 10V 0.7 DRAIN CURRENT : ID (A) 8V 6V 0.6 DRAIN CURRENT : ID (A) Ta=25°C Pulsed 0.5 4V 0.4 0.3 3.5V 0.2 VGS=3V VDS=10V Pulsed 0.1 Ta=−25°C 25°C 75°C 125°C 0.01 0.1 1.5 2.0 2.5 3.0 3.5 4.0 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 DRAIN-SOURCE VOLTAGE : VDS (V) 1.0 1.0 0.01 2.5 ID=200mA 2.0 100mA 1.5 1.0 −50 −25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) Fig.7 Static drain-source on-state resistance vs. channel temperature 1 Ta=25°C Pulsed 5 4 ID=200mA 3 2 100mA 1 0 0 10 15 10 0.1 Ta=125°C 75°C 25°C −25°C 0.01 0.2 5 0.4 0.6 0.8 20 Fig.6 Static drain-source on-state resistance vs. gate-source voltage VGS=0V Pulsed 0.001 0.0 100 125 150 GATE-SOURCE VOLTAGE : VGS (V) Fig.5 Static drain-source on-state resistance vs. drain current ( ΙΙ ) REVERSE DRAIN CURRENT : IDR (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) VGS=10V Pulsed 75 6 DRAIN CURRENT : I D (A) Fig.4 Static drain-source on-State resistance vs. drain current ( Ι ) 50 7 1.0 0.1 25 0 Fig.3 Gate threshold voltage vs. channel temperature Ta=125°C 75°C 25°C −25°C DRAIN CURRENT : I D (A) 3.0 0.0 −50 −25 CHANNEL TEMPERATURE : Tch (°C) VGS=4V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) Ta=125°C 75°C 25°C −25°C 0.1 0.5 Fig.2 Typical transfer characteristics 10 VGS=10V Pulsed 1.0 0.01 1.0 GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Typical output characteristics 10 1.5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 1.0 VDS=10V ID=1mA Pulsed 2.0 REVERSE DRAIN CURRENT : IDR (A) 0.0 0.0 0.5 2.5 GATE THRESHOLD VOLTAGE : VGS (th) (V) 1 0.8 1.0 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.8 Reverse drain current vs. source-drain voltage ( Ι ) 1.2 Ta=25°C Pulsed 1 VGS=10V 0V 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.2 1.0 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.9 Reverse drain current vs. source-drain voltage ( ΙΙ ) Rev.B 3/4 SM6K2 1 1000 100 VGS=10V Pulsed Ta=−25°C 25°C 75°C 125°C 0.01 0.001 0.001 0.01 0.1 1 Ciss 10 Coss Crss 1 0.01 DRAIN CURRENT : ID (A) 0.1 1 10 SWITCHING TIME : t (ns) 0.1 Ta=25°C f=1MHz VGS=0V CAPACITANCE : C (pF) FORWARD TRANSFER ADMITTANCE : I Yfs I (S) Transistors tf 100 td(off) 10 td(on) tr 1 1 100 10 100 1000 DRAIN CURRENT : ID (mA) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Forward transfer admittance vs. drain current Ta=25°C VDD=30V VGS=10V RG=10Ω Pulsed Fig.12 Switching characteristics Fig.11 Typical capacitance vs. drain-source voltage zSwitching characteristics measurement circuit Pulse width VGS RG ID D.U.T. VDS VGS 90% 50% 10% RL 50% 10% VDS 10% VDD 90% 90% td (on) ton Fig.13 Switching time test circuit tr td (off) tf toff Fig.14 Switching time waveforms Rev.B 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1