Power MOSFETs 2SK3318 Silicon N-channel power MOSFET Unit: mm 15.0±0.3 (0.7) For switching ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 600 V Gate-source surrender voltage VGSS ±30 V ID ±15 A Drain current IDP ±60 A EAS 112.5 mJ PD 100 W Peak drain current Avalanche energy capability * Ta = 25°C φ 3.2±0.1 15.0±0.2 21.0±0.5 16.2±0.5 • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown (3.2) 11.0±0.2 (3.5) Solder Dip ■ Features Power dissipation 5.0±0.2 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 1: Gate 2: Drain 3: Source TOP-3F-A1 Package Internal Connection D 3 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C G Note) *: L = 1 mH, IL = 15 A, 1 pulse S ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Gate-drain surrender voltage VDSS ID = 1 mA, VGS = 0 Diode forward voltage VDSF IDR = 15 A, VGS = 0 Gate threshold voltage Vth VDS = 25 V, ID = 1 mA Drain-source cutoff current IDSS VDS = 480 V, VGS = 0 Gate-source cutoff currentt IGSS VGS = ±30 V, VDS = 0 Drain-source on resistance RDS(on) VGS = 10 V, ID = 7.5 A Forward transfer admittance Yfs VDS = 25 V, ID = 7.5 A Min Typ Max 600 V −1.5 2 0.33 V 4 V 10 µA ±1 µA 0.46 Ω 10 S 3 500 pF Coss 340 pF Reverse transfer capacitance (Common-source) Crss 50 pF Turn-on delay time td(on) VDD = 150 V, ID = 7.5 A 40 ns tr RL = 20 Ω, VGS = 10 V Short-circuit forward transfer capacitance (Common-source) Ciss Short-circuit output capacitance (Common-source) Rise time Turn-off delay time Fall time VDS = 20 V, VGS = 0, f = 1 MHz 6 Unit 55 ns td(off) 310 ns tf 70 ns Channel-case heat resistance Rth(ch-c) 1.25 °C/W Channel-atmosphere heat resistance Rth(ch-a) 41.7 °C/W Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: November 2004 SJG00040AED 1 2SK3318 PD Ta Safe operation area 103 120 Non repetitive pulse TC = 25°C Power dissipation PD (W) Drain current ID (A) 100 102 I DP t = 100 µs ID 10 RDS(on) Limited 1 ms 1 10 ms (1) TC = Ta (2) Without heat sink PD = 3 W (1) 80 60 40 20 100 ms DC (2) 10−1 1 10 102 Drain-source voltage VDS (V) 2 103 0 0 50 100 Ambient temperature Ta (°C) SJG00040AED 150 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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