BC857BS NEW PRODUCT DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features · · · Ideally Suited for Automatic Insertion For Switching and AF Amplifier Applications Ultra-Small Surface Mount Package SOT-363 A B C H Mechanical Data K · · · · · · · Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K3W (See Page 3) Weight: 0.006 grams Maximum Ratings M J D C2 E2 B1 B2 F L E1 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° All Dimensions in mm C1 TOP VIEW @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5.0 V IC -100 mA Peak Collector Current (Note 1) ICM -200 mA Peak Base Current (Note 1) IBM -200 mA Power Dissipation at TSB = 50°C (Note 1) Pd 200 mW Tj, TSTG -55 to +125 °C Collector Current (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30373 Rev. 1 - 2 1 of 3 www.diodes.com BC857BS @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit DC Current Gain (Note 2) Characteristic hFE 220 — 475 — Thermal Resistance, Junction to Ambient Air (Note 1) RqJA — — 625 °C/W Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) — — — -100 -400 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Saturation Voltage (Note 2) VBE(SAT) — -700 — mV IC = -10mA, IB = -0.5mA Base-Emitter Voltage (Note 2) VBE -580 -665 -750 mV VCE = -5.0V, IC = -2.0mA Collector Cutoff Current ICBO ICBO — — — -15 -4.0 nA µA VCB = -30V, IE = 0 VCB = -30V, Tj = 150°C Emitter Cutoff Current IEBO — — -100 nA fT 100 Collector-Base Capacitance CCBO — — Emitter-Base Capacitance CEBO — 11 Gain Bandwidth Product Notes: — Test Condition VCE = -5.0V, IC = -2.0mA Note 1 VEB = -5.0V, IC = 0 MHz VCE = -5.0V, IC = -10mA, f = 100MHz 3 pF VCB = -10V, f = 1.0MHz — pF VEB = -0.5V, f = 1.0MHz — 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. 1000 250 VCE = -5V TA = 150°C TA = 25°C 200 hFE, DC CURRENT GAIN Pd, POWER DISSIPATION (mW) (see Note 1) 150 100 TA = -50°C 100 10 50 1 0 0 100 10 1 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve 100 IC, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs Collector Current 0.5 1000 IC / IB = 20 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE, COLLECTOR SATURATION VOLTAGE (V) NEW PRODUCT Electrical Characteristics 0.4 0.3 0.2 TA = 150°C TA = 25°C 0.1 TA = -50°C 0 0.1 1 TA = 25°C VCE = -5V 100 10 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Saturation Voltage vs Collector Current DS30373 Rev. 1 - 2 2 of 3 www.diodes.com 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current BC857BS Notes: (Note 3) Device Packaging Shipping BC857BS-7 SOT-363 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K3W = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K3W YM K3W YM NEW PRODUCT Ordering Information Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 Code N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30373 Rev. 1 - 2 3 of 3 www.diodes.com BC857BS