SUM45N25-58 New Product Vishay Siliconix N-Channel 250-V (D-S) 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) ID (A) 0.058 @ VGS = 10 V 45 0.062 @ VGS = 6 V 43 APPLICATIONS D Primary Side Switch D Plasma Display Panel Sustainer Function D TO-263 G G D S Top View S Ordering Information: SUM45N25-58N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 250 Gate-Source Voltage VGS "30 Continuous Drain Current (TJ = 175_C) TC = 25_C TC = 125_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C Maximum Power Dissipationa TA = 25_Cc Operating Junction and Storage Temperature Range Unit V 45 ID 25 IDM 70 IAR 35 EAR 61 A mJ 375b PD 3.75 W TJ, Tstg - 55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) RthJA 40 RthJC 0.4 _C/W Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 72314 S-31515—Rev. A, 14-Jul-03 www.vishay.com 1 SUM45N25-58 New Product Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 250 VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "30 V "250 VDS = 200 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = 200 V, VGS = 0 V, TJ = 125_C 50 VDS = 200 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea rDS(on) DS( ) gfs V 4 70 nA mA m A 0.047 0.058 VGS = 10 V, ID = 20 A, TJ = 125_C 0.121 VGS = 10 V, ID = 20 A, TJ = 175_C 0.163 VGS = 6 V, ID = 15 A, 0.049 VDS = 15 V, ID = 20 A 70 W 0.062 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 170 Total Gate Chargec Qg 95 Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Qgs Fall Timec VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 125 V,, VGS = 10 V,, ID = 45 A Qgd f = 1 MHz Rg td(off) 300 pF 140 28 nC 34 td(on) tr Timec 5000 VDD = 100 V, RL = 2.78 W ID ^ 45 A, VGEN = 10 V, RG = 2.5 W tf W 1.6 22 35 220 330 40 60 145 220 ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 45 Pulsed Current ISM 70 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 45 A, VGS = 0 V trr IRM(REC) Qrr IF = 45 A,, di/dt = 100 A/ms m A 1.0 1.5 V 150 225 ns 12 18 A 0.9 2 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72314 S-31515—Rev. A, 14-Jul-03 SUM45N25-58 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 100 VGS = 10 thru 7 V 6V 80 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 5V 20 60 40 TC = 125_C 20 25_C 4V - 55_C 0 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 150 0.10 TC = - 55_C r DS(on) - On-Resistance ( W ) g fs - Transconductance (S) 120 25_C 90 125_C 60 30 0 0.08 0.06 VGS = 6 V VGS = 10 V 0.04 0.02 0.00 0 10 20 30 40 50 60 0 20 ID - Drain Current (A) 40 80 100 ID - Drain Current (A) Capacitance Gate Charge 20 7000 V GS - Gate-to-Source Voltage (V) 6000 Ciss C - Capacitance (pF) 60 5000 4000 3000 2000 Crss 1000 Coss 0 VDS = 125 V ID = 45 A 16 12 8 4 0 0 40 80 120 160 VDS - Drain-to-Source Voltage (V) Document Number: 72314 S-31515—Rev. A, 14-Jul-03 200 0 30 60 90 120 150 180 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM45N25-58 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.8 100 VGS = 10 V ID = 20 A I S - Source Current (A) r DS(on) - On-Resistance (W) (Normalized) 2.4 2.0 1.6 1.2 TJ = 150_C TJ = 25_C 10 0.8 0.4 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (_C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 100 300 290 V(BR)DSS (V) ID = 1.0 mA I Dav (a) 10 IAV (A) @ TA = 25_C 280 270 260 1 250 240 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 tin (Sec) www.vishay.com 4 0.1 1 230 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) Document Number: 72314 S-31515—Rev. A, 14-Jul-03 SUM45N25-58 New Product Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area, Case Temperature 100 50 Limited by rDS(on) I D - Drain Current (A) 40 I D - Drain Current (A) 10 ms 30 20 100 ms 10 1 ms 10 ms 1 100 ms dc TC = 25_C Single Pulse 10 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) TC - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Document Number: 72314 S-31515—Rev. A, 14-Jul-03 www.vishay.com 5