SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 20 0.017 @ VGS = 4.5 V 15 APPLICATIONS VDS (V) 20 D TO-252 Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested D D D D D High-Side Synchronous Buck DC/DC Conversion − Desktop − Server G S Top View S Ordering Information: SUD50N02-09P SUD50N02-09P—E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "20 TA = 25_C Continuous Drain Currenta TC= 100_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current L = 0.1 0 1 mH Single Pulse Avalanche Energy TA = 25_C Maximum Power Dissipation TC = 25_C Operating Junction and Storage Temperature Range Unit V 20 ID 14 IDM 100 IS 4.3 IAS 29 EAS A 42 mJ 6.5a PD W 39.5 TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Symbol t v 10 sec Steady State RthJA RthJC Typical Maximum 19 23 40 50 3.1 3.8 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package Document Number: 72034 S-41168—Rev. C, 14-Jun-04 www.vishay.com 1 SUD50N02-09P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max Unit V(BR)DSS VGS = 0 V, ID = 250 mA 20 VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 125_C 50 Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 0.0095 0.014 VGS = 4.5 V, ID = 20 A Forward Transconductanceb gfs mA A 0.008 VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) nA 50 VGS = 10 V, ID = 20 A Drain-Source Drain Source On On-State State Resistanceb V 3.0 0.0135 VDS = 15 V, ID = 20 A W 0.017 15 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance 1300 VGS = 0 V, VDS = 10 V, f = 1 MHz 470 10.5 1.6 tr Turn-Off Delay Timec VDD = 10 V, RL = 0.2 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W td(off) Fall Timec nC 4.0 td(on) Rise Timec 16 4.2 VDS = 10 V, VGS = 4.5 V, ID = 50 A Rg Turn-On Delay Timec pF p 275 tf 4.0 6 8 12 10 15 25 40 12 20 W ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 50 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 35 70 ns Source-Drain Reverse Recovery Time 100 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 100 VGS = 10 thru 6 V 80 I D − Drain Current (A) I D − Drain Current (A) TC = −55_C 5V 80 60 4V 40 20 25_C 60 125_C 40 20 3V 0 0 0 2 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 10 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Document Number: 72034 S-41168—Rev. C, 14-Jun-04 SUD50N02-09P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 60 0.030 g fs − Transconductance (S) 50 r DS(on)− On-Resistance ( W ) TC = −55_C 25_C 40 125_C 30 20 10 0 0.025 VGS = 4.5 V 0.020 0.015 VGS = 10 V 0.010 0.005 0.000 0 10 20 30 40 50 0 20 40 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) 100 16 20 Gate Charge 10 1600 Ciss 1200 800 Coss 400 Crss 0 VDS = 10 V ID = 50 A 8 6 4 2 0 0 4 8 12 16 20 0 4 VDS − Drain-to-Source Voltage (V) 1.6 8 12 Qg − Total Gate Charge (nC) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 30 A I S − Source Current (A) 1.8 rDS(on) − On-Resiistance (Normalized) 80 ID − Drain Current (A) Capacitance 2000 60 1.4 1.2 1.0 TJ = 150_C TJ = 25_C 10 0.8 0.6 −50 −25 0 25 50 75 100 125 TJ − Junction Temperature (_C) Document Number: 72034 S-41168—Rev. C, 14-Jun-04 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) www.vishay.com 3 SUD50N02-09P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Limited by rDS(on) 20 10, 100 ms 100 I D − Drain Current (A) I D − Drain Current (A) Safe Operating Area 1000 25 15 10 5 1 ms 10 10 ms TA = 25_C Single Pulse 0.1 0 0 25 50 75 100 125 150 100 ms 1s 10 s 100 s dc 1 0.01 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) TA − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 1000 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72034 S-41168—Rev. C, 14-Jun-04