FAIRCHILD FDW2508PB

FDW2508PB
Dual P-Channel –1.8V Specified PowerTrench® MOSFET
–12V, –6A, 18mΩ
Features
General Description
This P-Channel –1.8V specified MOSFET uses Fairchild
„ Max rDS(on) = 18mΩ at VGS = –4.5V, ID = –6A
Semiconductor’s advanced low voltage PowerTrench®. It has
„ Max rDS(on) = 22mΩ at VGS = –2.5V, ID = –5A
been optimized for battery power management applications.
„ Max rDS(on) = 30mΩ at VGS = –1.8V, ID = –4A
„ Low gate charge
Application
„ High performance trench technology for extremely low rDS(on)
„ Low profile TSSOP-8 package
„ Power management
„ RoHS compliant
„ Load switch
„ Battery protection
TSSOP8
Pin 1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS
Drain to Source Voltage
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
(Note 1a)
-Pulsed
±8
V
–6
A
2
Power Dissipation-Single Operation
TJ, TSTG
Units
V
–30
Power Dissipation-Dual Operation
PD
Ratings
–12
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
1.6
W
1
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
80
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
125
°C/W
Package Marking and Ordering Information
Device Marking
2508PB
Device
FDW2508PB
©2006 Fairchild Semiconductor Corporation
FDW2508PB Rev.B
Package
TSSOP-8
1
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDW2508PB Dual P-Channel –1.8V Specified PowerTrench® MOSFET
October 2006
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = –250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
–12
ID = –250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
V
VDS = –10V
VGS = 0V
mV/°C
–12
–1
TJ = 125°C
–100
VGS = ±8V, VDS = 0V
µA
±100
nA
–1.5
V
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = –250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = –250µA, referenced to 25°C
3
VGS = –4.5V, ID = –6A
15
18
VGS = –2.5V, ID = –5A
18
22
VGS = –1.8V, ID = –4A
22
30
VGS = –4.5V, ID = –6A,TJ = 125°C
23
30
VDS = –5V, ID = –6A
35
rDS(on)
Static Drain to Source On-Resistance
gFS
Forward Transconductance
–0.4
–0.6
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = –6V, VGS = 0V,
f = 1MHz
2835
3775
pF
440
590
pF
370
555
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = –6V, ID = –6A
VGS = –4.5V, RGEN = 6Ω
VGS = –4.5V ,VDD = –6V
ID = –6A
8
16
ns
16
29
ns
254
407
ns
106
170
ns
32
45
nC
4.3
nC
7.1
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = –1.1A
(Note 2)
IF = –6A, di/dt = 100A/µs
–0.6
–1.2
V
106
159
ns
110
165
nC
Notes:
1: RθJA is the sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as solder mounting surface of the drian pins. RθJC is
guaranteed by design while RθCA is determined by the user's board design.
b.RθJA is 125°C/W(steady state)
when mounted on a minimum
pad.
a. RθJA is 80°C/W(steady
state) when mounted on a 1
in2 pad of 2 oz copper.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDW2508PB Rev.B
2
www.fairchildsemi.com
FDW2508PB Dual P-Channel –1.8V Specified PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
4.5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
30
VGS = -4.5V
24
VGS = -2.5V
VGS = -1.8V
18
VGS = -1.5V
12
6
0
0.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
3.0
1.5
1.0
0.5
0.8
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
150
150
Figure 3. Normalized On Resistance
vs Junction Temperature
-IS, REVERSE DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
20
10
TJ = 150oC
TJ = 25oC
5
TJ = -55oC
0
0.5
1.0
1.5
-VGS, GATE TO SOURCE VOLTAGE (V)
2.0
Figure 5. Transfer Characteristics
FDW2508PB Rev.B
5
10
15
20
-ID, DRAIN CURRENT(A)
25
30
ID = -6A
35
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 150oC
25
20
TJ = 25oC
15
10
1.5
3.0
4.5
6.0
-VGS, GATE TO SOURCE VOLTAGE (V)
7.5
Figure 4. On-Resistance vs Gate to
Source Voltage
30
15
0
40
1.0
25
VGS = -2.5V
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
ID = -6A
VGS = -4.5V
-25
VGS = -1.8V
2.0
0.5
1.0
1.5
2.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
1.2
0.6
-50
VGS = -4.5V
2.5
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.4
VGS = -1.5V
3.5
Figure 1. On Region Characteristics
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
4.0
40
VGS = 0V
10
TJ = 150oC
1
TJ = 25oC
TJ = -55oC
0.1
0.01
0.2
0.4
0.6
0.8
1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
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FDW2508PB Dual P-Channel –1.8V Specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
4.0
Ciss
3.5
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE(V)
4
10
4.5
3.0
VDD = -4V
2.5
VDD = -6V
2.0
VDD = -8V
1.5
1.0
Crss
f = 1MHz
VGS = 0V
0.5
0.0
2
0
5
10
15
20
25
Qg, GATE CHARGE(nC)
30
10
0.1
35
Figure 7. Gate Charge Characteristics
P(PK), PEAK TRANSIENT POWER (W)
10
1ms
10ms
1
100ms
1s
0.1
DC
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.01
1E-3
0.1
SINGLE PULSE
TJ = MAX RATED
TA = 25OC
1
30
10
1
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
200
TA = 25oC
100
FOR TEMPERATURES
VGS = -8V
Figure 9. Forward Bias Safe
Operating Area
NORMALIZED THERMAL
IMPEDANCE, ZθJA
0.1
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
150 – T A
-----------------------125
I = I25
10
SINGLE PULSE
1
-3
10
-2
-1
10
0
1
2
10
10
10
t, PULSE WIDTH (s)
-VDS, DRAIN to SOURCE VOLTAGE (V)
2
1
20
Figure 8. Capacitance vs Drain
to Source Voltage
100
-ID, DRAIN CURRENT (A)
Coss
3
10
10
3
10
Figure 10. Single Pulse Maximum
Power Dissipation
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
SINGLE PULSE
1E-3
-3
10
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Transient Thermal Response Curve
FDW2508PB Rev.B
4
www.fairchildsemi.com
FDW2508PB Dual P-Channel –1.8V Specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDW2508PB Dual P-Channel –1.8V Specified PowerTrench® MOSFET
www.fairchildsemi.com
5
FDW2508PB Rev.B
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22