ILD1615/ ILQ1615 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad Channel), 110 °C Rated Features • Operating temperature from - 55 °C to + 110 °C • Identical Channel to Channel Footprint e3 • Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection • Isolation Test Voltage, 5300 VRMS • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Dual Channel Quad Channel Agency Approvals • UL1577, File No. E52744 System Code H or J, Double Protection • CSA 93751 • BSI IEC60950 IEC60065 • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Description The ILD/Q1615 are multi-channel 110 °C rated phototransistor optocouplers that use GaAs IRLED emiters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test voltage of 7500 VACPEAK and a working voltage of 1700 VRMS. The binned min./max. and linear CTR characteristics make these devices well suited for DC or AC voltage detection. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments. Because of guaranteed maximum non-saturated and saturated switching characteristics, the ILD/Q1615 can be used in medium speed data I/O and control systems. The binned min./max. CTR specification allow easy Document Number 82582 Rev. 1.5, 23-Mar-06 A 1 8 C C 2 7 E A 3 6 C C 4 5 E A 1 16 C C 2 15 E A 3 14 C C 4 13 E A 5 12 C C 6 11 E A 7 10 C C 8 9 E i179052 worst case interface calculations for both level detection and switching applications. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at IF = 1.0 mA. Order Information Part Remarks ILD1615-1 CTR 40 - 80 %, DIP-8 ILQ1615-1 CTR 40 - 80 %, DIP-16 ILD1615-2 CTR 63 - 125 %, DIP-8 ILQ1615-2 CTR 63 - 125 %, DIP-16 ILD1615-3 CTR 100 - 200 %, DIP-8 ILQ1615-3 CTR 100 - 200 %, DIP-16 ILD1615-4 CTR 160 - 320 %, DIP-8 ILQ1615-4 CTR 160 - 320 %, DIP-16 For additional information on the available options refer to Option Information. www.vishay.com 1 ILD1615/ ILQ1615 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter Test condition VR 6.0 V Forward current IF 60 mA Surge current IFSM 1.5 A Power dissipation Pdiss 100 mW 1.0 mW/°C Derate linearly from 25 °C Unit Output Symbol Value Unit Collector-emitter breakdown voltage Parameter Test condition BVCEO 70 V Emitter-collector breakdown voltage BVECO 7.0 V IC 50 mA IC 100 mA Pdiss 150 mW 1.5 mW/°C Collector current t < 1.0 ms Power dissipation Derate linearly from 25 °C Coupler Symbol Value Unit Storage temperature Parameter Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 110 °C Tsld 260 °C Package power dissipation, ILD1615 400 mW Derate linearly from 25 °C 5.33 mW/°C Package power dissipation, ILQ1615 500 mW 6.67 mW/°C 5300 VRMS Soldering temperature Test condition 2.0 mm distance from case bottom Derate linearly from 25 °C Isolation test voltage t = 1.0 sec. VISO Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Isolation resistance www.vishay.com 2 VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 10 Ω 11 Document Number 82582 Rev. 1.5, 23-Mar-06 ILD1615/ ILQ1615 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Symbol Min Typ. Max Forward voltage Parameter IF = 10 mA Test condition VF 1.0 1.15 1.3 Breakdown voltage IR = 10 µA VBR 6.0 30 Reverse current VR = 6.0 V IR 0.01 Capacitance VR = 0 V, f = 1.0 MHz CO 25 Unit V V 10 µA pF Output Parameter Test condition Symbol Min Typ. Max Unit 2.0 50 nA 5.0 100 nA Collector-emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 6.8 Collector-emitter leakage current, -1, -2 VCE = 10 V ICEO Collector-emitter leakage, -3, -4 VCE = 10 V ICEO pF Collector-emitter breakdown voltage ICE = 0.5 mA BVCEO 70 V Emitter-collector breakdown voltage IE = 0.1 mA BVECO 7.0 V IF = 10 mA, VCE = 5.0 V CTRX/ CTRY 1 to 1 Symbol Min Package transfer characteristics Channel/Channel CTR match 2 to 1 Coupler Parameter Test condition Capacitance (input-output) VIO = 0 V, f = 1.0 MHz CIO Insulation resistance VIO = 500 V, TA = 25 °C RS Channel to channel isolation Typ. Max Unit 0.8 1012 pF Ω 1014 500 VAC Current Transfer Ratio Parameter Current Transfer Ratio (collector-emitter saturated) Document Number 82582 Rev. 1.5, 23-Mar-06 Test condition IF = 10 mA, VCE = 0.4 V Part Symbol ILD1615-1 ILQ1615-1 CTRCEsat Min Typ. 25 Max Unit % ILD1615-2 ILQ1615-2 CTRCEsat 40 % ILD1615-3 ILQ1615-3 CTRCEsat 60 % ILD1615-4 ILQ1615-4 CTRCEsat 100 % www.vishay.com 3 ILD1615/ ILQ1615 Vishay Semiconductors Parameter Current Transfer Ratio (collector-emitter) Part Symbol Min Typ. Max Unit IF = 10 mA, VCE = 5.0 V Test condition ILD1615-1 ILQ1615-1 CTRCE 40 60 80 % IF = 1.0 mA, VCE = 5.0 V ILD1615-1 ILQ1615-1 CTRCE 13 30 IF = 10 mA, VCE = 5.0 V ILD1615-2 ILQ1615-2 CTRCE 63 80 IF = 1.0 mA, VCE = 5.0 V ILD1615-2 ILQ1615-2 CTRCE 22 45 IF = 10 mA, VCE = 5.0 V ILD1615-3 ILQ1615-3 CTRCE 100 150 IF = 1.0 mA, VCE = 5.0 V ILD1615-3 ILQ1615-3 CTRCE 34 70 IF = 10 mA, VCE = 5.0 V ILD1615-4 ILQ1615-4 CTRCE 160 200 IF = 1.0 mA, VCE = 5.0 V ILD1615-4 ILQ1615-4 CTRCE 56 90 % 125 % % 200 % % 320 % % Switching Characteristics Non-saturated Parameter Test condition Symbol Min Typ. Max Unit Turn-on time IF = 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP ton 3.0 µs Rise time IF = 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tr 2.0 µs Turn-off time IF = 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP toff 2.3 µs Fall time IF = 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tf 2.0 µs Propagation H-L IF = 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tPHL 1.1 µs Propagation L-H IF = 10 mA, VCC = 5.0 V, RL = 75 Ω, 50 % of VPP tPLH 2.5 µs Saturated Parameter Turn-on time Rise time Part Symbol IF = 20 mA, VCC = 5.0 V, RL = 1.0 kΩ, VHT 1.5 V Test condition ILD1615-1 ILQ1615-1 ton 3.0 µs IF = 10 mA, VCC = 5.0 V, RL = 1.0 kΩ, VHT 1.5 V ILD1615-2 ILQ1615-2 ton 4.3 µs ILD1615-3 ILQ1615-3 ton 4.3 µs IF = 5.0 mA, VCC = 5.0 V, RL = 1.0 kΩ, VHT 1.5 V ILD1615-4 ILQ1615-4 ton 6.0 µs IF = 20 mA, VCC = 5.0 V, RL = 1.0 kΩ, VHT 1.5 V ILD1615-1 ILQ1615-1 tr 2.0 µs IF = 10 mA, VCC = 5.0 V, RL = 1.0 kΩ, VHT 1.5 V ILD1615-2 ILQ1615-2 tr 2.8 µs ILD1615-3 ILQ1615-3 tr 2.8 µs ILD1615-4 ILQ1615-4 tr 4.6 µs IF = 5.0 mA, VCC = 5.0 V, RL = 1.0 kΩ, VHT 1.5 V www.vishay.com 4 Min Typ. Max Unit Document Number 82582 Rev. 1.5, 23-Mar-06 ILD1615/ ILQ1615 Vishay Semiconductors Parameter Turn-off time Fall time Propagation H-L Propagation L-H Part Symbol IF = 20 mA, VCC = 5.0 V, RL = 1.0 kΩ, VHT 1.5 V Test condition ILD1615-1 ILQ1615-1 toff 18 µs IF = 10 mA, VCC = 5.0 V, RL = 1.0 kΩ, VHT 1.5 V ILD1615-2 ILQ1615-2 toff 25 µs ILD1615-3 ILQ1615-3 toff 25 µs IF = 5.0 mA, VCC = 5.0 V, RL = 1.0 kΩ, VHT 1.5 V ILD1615-4 ILQ1615-4 toff 25 µs IF = 20 mA, VCC = 5.0 V, RL = 1.0 kΩ, VHT 1.5 V ILD1615-1 ILQ1615-1 tf 11 µs IF = 10 mA, VCC = 5.0 V, RL = 1.0 kΩ, VHT 1.5 V ILD1615-2 ILQ1615-2 tf 14 µs ILD1615-3 ILQ1615-3 tf 14 µs IF = 5.0 mA, VCC = 5.0 V, RL = 1.0 kΩ, VHT 1.5 V ILD1615-4 ILQ1615-4 tf 15 µs IF = 5.0 mA, VCC = 5.0 V, RL = 1.0 kΩ, VHT 1.5 V ILD1615-1 ILQ1615-1 tPHL 1.6 µs ILD1615-2 ILQ1615-2 tPHL 2.6 µs ILD1615-3 ILQ1615-3 tPHL 2.6 µs ILD1615-4 ILQ1615-4 tPHL 5.4 µs ILD1615-1 ILQ1615-1 tPLH 8.6 µs ILD1615-2 ILQ1615-2 tPLH 7.2 µs ILD1615-3 ILQ1615-3 tPLH 7.2 µs ILD1615-4 ILQ1615-4 tPLH 7.4 µs Symbol Min IF = 5.0 mA, VCC = 5.0 V, RL = 1.0 kΩ, VHT 1.5 V Min Typ. Max Unit Common Mode Transient Immunity Parameter Test condition Typ. Max Unit Common mode rejection output high VCM = 50 VP-P, RL = 1.0 kΩ, IF = 0 mA CMH 5000 V/µs Common mode rejection output low VCM = 50 VP-P, RL = 1.0 kΩ, IF = 10 mA CML 5000 V/µs CCM 0.01 pF Common mode coupling capacitance Document Number 82582 Rev. 1.5, 23-Mar-06 www.vishay.com 5 ILD1615/ ILQ1615 Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified 10000 400 40 V 1000 300 250 Detector 200 150 100 I CE0 (nA) Ptot- Power Dissipation (mW) 350 LED 24 V 12 V 10 100 1 50 0.10 - 75 0 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) 18731 18734 Figure 1. Permissible Power Dissipation vs. Temperature Non-Saturation Operation - 25 25 75 125 Tamb - Ambient Temperature (°C) Figure 4. Collector to Emitter Dark Current vs. Ambient Temperature 30 1.5 - 55 °C 1.4 I C (mA) 1.1 25 °C 1.0 5 mA 110 °C 0.8 1.00 10.00 2 mA Figure 2. Forward Voltage vs. Forward Current 50 45 IF = 30 mA 40 35 30 IF = 20 mA 25 IF = 15 mA 20 15 IF = 10 mA 10 IF = 5 mA 5 I F = 1 mA 0 0 0.0 100.00 IF - Forward Current (mA) 17596 IC - Collector Current (mA) 10 mA 10 50 °C 0.9 0.7 0.10 18735 18733 VCE - Collector Emitter Voltage (V) Figure 3. Collector Current vs. Collector Emitter Voltage www.vishay.com 0.1 0.2 0.3 1 mA 0.4 0.5 0.6 VCE - Collector to Emitter Voltage (V) Figure 5. Normalized Current vs. Collector Emitter Saturation Voltage 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 6 25 mA 20 1.2 CTR Norm - Normalized Output Current V F - Forward Voltage (V) 0 °C 1.3 17597 1.2 IF = 5 mA 1.0 10 mA 0.8 0.6 1 mA 0.4 0.2 Normalized to IF = 10 mA, Tamb = 25 C, VCE= 0.4 V, saturated 0.0 - 55 - 35 - 15 5 25 45 65 85 105 125 Tamb - Ambient Temperature (°C) Figure 6. Normalized Current Transfer Ratio vs. Ambient Temperature Document Number 82582 Rev. 1.5, 23-Mar-06 ILD1615/ ILQ1615 1000 1.20 1.10 1.00 10 mA 0.90 0.80 5 mA 0.70 0.60 1 mA 0.50 0.40 Normalized to Temp = 25 °C at 0.30 IF = 10 mA and VCE = 5 V 0.20 0.10 0.00 - 55 - 35 - 15 5 25 45 65 85 105 125 Tamb - Ambient Temperature (°C) 18737 100 toff 10 ton 1 0.1 18340 Pulse Width = 100 ms IF = 10 mA Duty Cycle = 50 % -1 1.0 -2 0.8 0.6 -3 0.4 -4 Normalized to IF = 10 mA, Tamb = 25 °C, VCE= 0.4 V, saturated 0.2 100 trise 10 t fall 1 0.0 0.10 1.00 10.00 0.1 100.00 IF - Forward Current (mA) 18341 Figure 8. Normalized CTR vs. Forward Current CTR Norm - Normalized Output Current 100.0 1000 1.2 17598 1.0 10.0 R L - Load Resistance (kΩ) Figure 10. Forward Resistance vs. Forward Current Switching Time (ms) CTR Norm - Normalized Output Current Figure 7. Normalized CTR vs. Temperature Pulse Width = 100 ms IF = 10 mA Duty Cycle = 50 % Switching Time (µs) CTRNorm - Normalized Output Current Vishay Semiconductors 1 10 R L - Load Resistance (kΩ) 100 Figure 11. Forward Resistance vs. Forward Current 1.2 -2 -1 1.0 0.8 -3 0.6 -4 0.4 Normalized to IF = 10 mA, Tamb = 25 °C, VCE= 5 V, non–saturated 0.2 0.0 0.10 17599 1.00 10.00 IF - Forward Current (mA) 100.00 Figure 9. Normalized CTR vs. Forward Current Document Number 82582 Rev. 1.5, 23-Mar-06 www.vishay.com 7 ILD1615/ ILQ1615 Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 4 3 2 5 6 7 1 0.255 (6.48) 0.268 (6.81) 8 ISO Method A 0.379 (9.63) 0.390 (9.91) 0.030 (0.76) 0.045 (1.14) 0.300 (7.62) 0.031(0.79) typ. 4° typ. 0.130 (3.30) 0.150 (3.81) 0.230 (5.84) 0.050 (1.27) 10° 0.020 (0.51) 0.035 (0.89) 0.018 (0.46) 0.022 (0.56) 0.110 (2.79) 0.130 (3.30) 3° - 9° 0.250 (6.35) 0.008 (0.20) 0.012 (0.30) 0.100 (2.54) typ. i178006 Package Dimensions in Inches (mm) pin one ID 8 7 6 5 4 3 2 1 0.255 (6.48) 0.265 (6.81) 9 10 11 12 13 14 15 16 ISO Method A 0.779 (19.77 ) 0.790 (20.07) 0.030 (0.76) 0.045 (1.14) 0.300 (7.62) typ. 0.031(0.79) 0.130 (3.30) 0.150 (3.81) 4° 0.018 (0.46) 0.022 (0.56) 0.020 (0.51) 0.035 (0.89) 0.100 (2.54) typ. 0.050 (1.27) 10° typ. 3° - 9° 0.110 (2.79) 0.130 (3.30) 0.230 (5.84) 0.250 (6.35) 0.008 (0.20) 0.012 (0.30) i178007 www.vishay.com 8 Document Number 82582 Rev. 1.5, 23-Mar-06 ILD1615/ ILQ1615 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 82582 Rev. 1.5, 23-Mar-06 www.vishay.com 9 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1