FDG6306P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –0.6 A, –20 V. RDS(ON) = 420 mΩ @ V GS = –4.5 V RDS(ON) = 630 mΩ @ V GS = –2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) Applications • Battery management • Compact industry standard SC70-6 surface mount package • Load switch S G S 1 or 4 6 or 3 D G 2 or 5 5 or 2 G D 3 or 6 4 or 1 S D D G Pin 1 S SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter –20 V V GSS Gate-Source Voltage ± 12 V ID Drain Current –0.6 A – Continuous (Note 1) – Pulsed –2.0 PD Power Dissipation for Single Operation TJ , TSTG Operating and Storage Junction Temperature Range (Note 1) 0.3 W –55 to +150 °C 415 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .06 FDG6306P 7’’ 8mm 3000 units 2001 Fairchild Semiconductor Corporation FDG6306P Rev C(W) FDG6306P February 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ∆BV DSS ∆TJ IDSS Drain–Source Breakdown V GS = 0 V, ID = –250 µA Voltage Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current V DS = –16 V, V GS = 0 V IGSSF Gate–Body Leakage, Forward V GS = –12 V, V DS = 0 V –100 µA nA IGSSR Gate–Body Leakage, Reverse V GS = 12 V, V DS = 0 V 100 nA –1.5 V BV DSS On Characteristics –20 V –14 mV/°C –1 (Note 2) ID = –250 µA V GS(th) Gate Threshold Voltage V DS = V GS , ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C ID(on) On–State Drain Current V GS V GS V GS V GS gFS Forward Transconductance V DS = –5 V, = –4.5 V, ID = –0.6 A = –2.5 V, ID = –0.5 A = –4.5 V, ID = –0.6 A, TJ =125°C = –4.5 V, V DS = –5 V –0.6 –1.2 3 300 470 400 mV/°C 420 630 700 –2 MΩ A ID = –0.6 A 1.8 S V DS = –10 V, V GS = 0 V, f = 1.0 MHz 114 pF 24 pF 9 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) V DD = –10 V, ID = 1 A, V GS = –4.5 V, RGEN = 6 Ω V DS = –10 V, ID = –0.6 A, V GS = –4.5 V 5.5 11 ns 14 25 ns 6 12 ns 1.7 3.4 ns 1.4 2.0 nC 0.3 nC 0.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current V SD Drain–Source Diode Forward Voltage V GS = 0 V, IS = –0.25 A(Note 2) –0.77 –0.25 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad . 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDG6306P Rev C (W) FDG6306P Electrical Characteristics FDG6306P Typical Characteristics 2.5 -ID , DRAIN CURRENT (A) VGS = -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 -3.5V 1.6 -3.0V -2.5V 1.2 0.8 -2.0V 0.4 2.25 2 VGS = -2.5V 1.75 1.5 -3.0V 1.25 -3.5V -4.0V -4.5V 1 0.75 0 0 0.5 1 1.5 2 2.5 0 3 0.5 Figure 1. On-Region Characteristics. 1.5 2 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.2 1.4 ID = -0.3 A ID = -0.6A VGS = -4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1 -ID , DRAIN CURRENT (A) -V DS, DRAIN-SOURCE VOLTAGE (V) 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 1 0.8 o T A = 125 C 0.6 o T A = 25 C 0.4 0.2 1.5 150 2 2.5 3 3.5 4 4.5 5 o T J, JUNCTION TEMPERATURE ( C) -V GS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 2 o TA = -55 C VGS = 0V o -IS, REVERSE DRAIN CURRENT (A) VD S = -5V 25 C o -I D, DRAIN CURRENT (A) 125 C 1.5 1 0.5 0 0.5 1 o TA = 125 C 0.1 o 25 C 0.01 o -55 C 0.001 0.0001 1 1.5 2 2.5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6306P Rev C (W) FDG6306P Typical Characteristics 200 VDS = -5V ID = -0.6A f = 1MHz VGS = 0 V -10V 4 160 -15V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 5 3 2 120 CISS 80 1 40 0 0 COSS CRSS 0 0.3 0.6 0.9 1.2 1.5 1.8 0 5 Q g, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 30 SINGLE PULSE o Rθ JA = 415 C/W 100µ s o 24 RDS(ON) LIMIT T A = 25 C POWER (W) 1ms 1 10ms 100ms 1s DC VGS = -4.5V SINGLE PULSE o RθJ A = 415 C/W 18 12 6 o TA = 25 C 0.01 0.1 1 10 0 0.0001 100 0.001 0.01 -V DS , DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -I D, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics. 10 0.1 10 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θ JA(t) = r(t) + Rθ JA R θJA = 415 °C/W 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 t2 0.01 0.01 TJ - TA = P * Rθ JA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. FDG6306P Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G