FDG318P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V). • –1.5 A, –20 V RDS(ON) = 0.200 Ω @ VGS = –4.5 V RDS(ON) = 0.350 Ω @ VGS = –2.5 V • Low gate charge (2.8nC typical) • High performance trench technology for extremely low RDS(ON) Applications • Load switch • Compact industry standard SC70-6 surface mount package • Power management • DC/DC converter 1 6 2 5 3 4 SC70-6 Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current –1.5 A – Continuous (Note 1a) – Pulsed PD –6 Power Dissipation for Single Operation TJ, TSTG (Note 1a) 0.75 (Note 1b) 0.48 Operating and Storage Junction Temperature Range W -55 to +150 °C 260 °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient RθJA Note 1b) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .18 FDG318P 7’’ 8mm 3000 units 1999 Fairchild Semiconductor Corporation FDG318P Rev B (W) FDG318P November 1999 PRELIMINARY Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units –16 mV/°C Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Forward Leakage VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Reverse Leakage VGS = –12 V, VDS = 0 V –100 nA On Characteristics –20 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C ID(on) On–State Drain Current VGS = –4.5 V, ID = –1.5 A VGS = –4.5 V, ID = –1.5 A, TJ = 125°C VGS = –2.5 V, ID = –1.0 A VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, –0.6 ID = –1.5 A –1.1 –1.5 3 V mV/°C 0.162 0.200 0.220 0.300 0.280 0.350 –3 Ω A 3.6 S Dynamic Characteristics VDS = –10 V, V GS = 0 V, f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge 266 pF 115 pF 31 pF (Note 2) VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 8 16 ns 23 37 ns Turn–Off Delay Time 14 25 ns Turn–Off Fall Time 4 12 ns 2.8 4.0 nC VDS = –10 V, ID = –1.5 A, VGS = –4.5 V 0.8 nC 0.8 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.62 A (Note 2) –0.77 –0.62 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2 a.) 170°C/W when mounted on a 1in pad of 2 oz. copper. b.) 260°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDG318P Rev B (W) FDG318P Electrical Characteristics FDG318P Typical Characteristics 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN-SOURCE CURRENT (A) 10 VGS = -4.5V -4.0V -3.5V 8 6 -3.0V 4 -2.5V 2 2 VGS = -2.5V 1.8 1.6 -3.0V 1.4 -3.5V 1.2 -4.0V 0.8 0 0 1 2 3 4 0 5 2 4 Figure 1. On-Region Characteristics. 8 10 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 0.6 ID = -1.5A VGS = - 4.5V 1.4 ID = -0.75A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 - ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) 1.3 1.2 1.1 1 0.9 0.8 0.5 0.4 o TA = 125 C 0.3 0.2 TA = 25oC 0.1 0 0.7 -50 -25 0 25 50 75 100 125 1 150 2 o 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 10 -IS, REVERSE DRAIN CURRENT (A) TA = -55oC VDS = -5V -ID, DRAIN CURRENT (A) -4.5V 1 o 25 C 8 125oC 6 4 2 VGS = 0V TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0 0.5 1.5 2.5 3.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4.5 0 0.4 0.8 1.2 1.6 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG318P Rev B (W) FDG318P Typical Characteristics 400 ID = -1.5A f = 1MHz VGS = 0 V VDS = -5V -10V 4 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 -15V 3 2 300 CISS 200 COSS 100 1 CRSS 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 5 Figure 7. Gate Charge Characteristics. 20 30 P(pk), PEAK TRANSIENT POWER (W) 1ms RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics. 10 10ms 100ms 1 1s 10s DC 0.1 VGS = -10V SINGLE PULSE RθJA = 260oC/W TA = 25oC 0.01 0.1 1 10 SINGLE PULSE RθJA = 260°C/W TA = 25°C 25 20 15 10 5 0 0.0001 100 0.001 0.01 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 260 °C/W 0.2 0.1 P(pk) 0.1 t1 0.05 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.02 0.01 0.01 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDG318P Rev B (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D