ETC FDG318P

FDG318P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor’s
advanced PowerTrench process. It has been optimized
for power management applications for a wide range of
gate drive voltages (2.5V – 12V).
• –1.5 A, –20 V RDS(ON) = 0.200 Ω @ VGS = –4.5 V
RDS(ON) = 0.350 Ω @ VGS = –2.5 V
• Low gate charge (2.8nC typical)
• High performance trench technology for extremely
low RDS(ON)
Applications
• Load switch
• Compact industry standard SC70-6 surface mount
package
• Power management
• DC/DC converter
1
6
2
5
3
4
SC70-6
Absolute Maximum Ratings
Symbol
o
TA=25 C unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
–1.5
A
– Continuous
(Note 1a)
– Pulsed
PD
–6
Power Dissipation for Single Operation
TJ, TSTG
(Note 1a)
0.75
(Note 1b)
0.48
Operating and Storage Junction Temperature
Range
W
-55 to +150
°C
260
°C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJA
Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.18
FDG318P
7’’
8mm
3000 units
1999 Fairchild Semiconductor Corporation
FDG318P Rev B (W)
FDG318P
November 1999
PRELIMINARY
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
–16
mV/°C
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = –250 µA, Referenced to 25°C
VDS = –16 V, VGS = 0 V
–1
µA
IGSSF
Gate–Body Forward Leakage
VGS = 12 V, VDS = 0 V
100
nA
IGSSR
Gate–Body Reverse Leakage
VGS = –12 V, VDS = 0 V
–100
nA
On Characteristics
–20
V
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA, Referenced to 25°C
ID(on)
On–State Drain Current
VGS = –4.5 V, ID = –1.5 A
VGS = –4.5 V, ID = –1.5 A, TJ = 125°C
VGS = –2.5 V, ID = –1.0 A
VGS = –4.5 V,
VDS = –5 V
gFS
Forward Transconductance
VDS = –5 V,
–0.6
ID = –1.5 A
–1.1
–1.5
3
V
mV/°C
0.162 0.200
0.220 0.300
0.280 0.350
–3
Ω
A
3.6
S
Dynamic Characteristics
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
tf
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
266
pF
115
pF
31
pF
(Note 2)
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 Ω
8
16
ns
23
37
ns
Turn–Off Delay Time
14
25
ns
Turn–Off Fall Time
4
12
ns
2.8
4.0
nC
VDS = –10 V, ID = –1.5 A,
VGS = –4.5 V
0.8
nC
0.8
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –0.62 A
(Note 2)
–0.77
–0.62
A
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
2
a.)
170°C/W when mounted on a 1in pad of 2 oz. copper.
b.)
260°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDG318P Rev B (W)
FDG318P
Electrical Characteristics
FDG318P
Typical Characteristics
2.2
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN-SOURCE CURRENT (A)
10
VGS = -4.5V
-4.0V
-3.5V
8
6
-3.0V
4
-2.5V
2
2
VGS = -2.5V
1.8
1.6
-3.0V
1.4
-3.5V
1.2
-4.0V
0.8
0
0
1
2
3
4
0
5
2
4
Figure 1. On-Region Characteristics.
8
10
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.5
0.6
ID = -1.5A
VGS = - 4.5V
1.4
ID = -0.75A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6
- ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
1.3
1.2
1.1
1
0.9
0.8
0.5
0.4
o
TA = 125 C
0.3
0.2
TA = 25oC
0.1
0
0.7
-50
-25
0
25
50
75
100
125
1
150
2
o
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
10
-IS, REVERSE DRAIN CURRENT (A)
TA = -55oC
VDS = -5V
-ID, DRAIN CURRENT (A)
-4.5V
1
o
25 C
8
125oC
6
4
2
VGS = 0V
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0
0.5
1.5
2.5
3.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4.5
0
0.4
0.8
1.2
1.6
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG318P Rev B (W)
FDG318P
Typical Characteristics
400
ID = -1.5A
f = 1MHz
VGS = 0 V
VDS = -5V
-10V
4
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
5
-15V
3
2
300
CISS
200
COSS
100
1
CRSS
0
0
0
0.5
1
1.5
2
2.5
3
0
3.5
5
Figure 7. Gate Charge Characteristics.
20
30
P(pk), PEAK TRANSIENT POWER (W)
1ms
RDS(ON) LIMIT
-ID, DRAIN CURRENT (A)
15
Figure 8. Capacitance Characteristics.
10
10ms
100ms
1
1s
10s
DC
0.1
VGS = -10V
SINGLE PULSE
RθJA = 260oC/W
TA = 25oC
0.01
0.1
1
10
SINGLE PULSE
RθJA = 260°C/W
TA = 25°C
25
20
15
10
5
0
0.0001
100
0.001
0.01
-VDS, DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
100
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 260 °C/W
0.2
0.1
P(pk)
0.1
t1
0.05
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.02
0.01
0.01
0.0001
Single Pulse
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDG318P Rev B (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench 
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D