IC IC SMD Type Complementary PowerTrench MOSFET KDW2521C Features TSSOP-8 Unit: mm N-Channel 5.5 A, 20 V RDS(ON) = 21m RDS(ON) = 35m @ VGS = 4.5 V @ VGS =2.5V P-Channel -3.8 A, 20 V RDS(ON) = 43 m RDS(ON) = 70 m @ VGS =- 4.5 V @ VGS =-2.5V High performance trench technology for extremely low RDS(ON) Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Unit Drain to Source Voltage VDSS 20 -20 V Gate to Source Voltage VGS Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) PD (Note 1b) TJ, TSTG Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) (Note 1b) R 12 V 5.5 -3.8 A 30 -30 A 12 1 0.6 W -55 to 150 125 /W 208 /W JA www.kexin.com.cn 1 IC IC SMD Type KDW2521C Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Testconditons Symbol BVDSS VGS = 0 V, ID = 250 ID = 250 Breakdown Voltage Temperature Coefficient IDSS Gate-Body Leakage IGSS Gate Threshold Voltage VGS(th) A, Referenced to 25 N-Ch 20 P-Ch -20 14 P-Ch -16 N-Ch 1 P-Ch -1 VGS = 12V, VDS = 0 V N-Ch 100 VGS = 12 V, VDS = 0 V P-Ch 100 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A A, Referenced to 25 A, Referenced to 25 N-Ch 0.6 0.8 1.5 P-Ch -0.6 -1.0 -1.5 N-Ch -3.2 P-Ch 3.0 Static Drain-Source On-Resistance RDS(on) N-Ch 24 35 23 34 VGS = -4.5 V, ID =-3.8 A 36 43 56 70 49 69 P-Ch VGS = -4.5 V, ID =-3.8A,TJ = 125 On-State Drain Current Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge 2 ID(on) www.kexin.com.cn Qgd VGS = 4.5 V, VDS = 5V N-Ch 30 VGS = -4.5 V, VDS = -5V P-Ch -15 VDS = 5V, ID = 5.5A N-Ch 26 VDS = -5V, ID = -3.5A P-Ch 13.2 N-Channel N-Ch 1082 VDS = 10 V, VGS = 0 V,f = 1.0 MHz P-Ch 1030 N-Ch 277 P-Ch 280 VDS = -10 V, VGS = 0 V,f = 1.0 MHz N-Ch 130 P-Ch 120 pF pF pF N-Ch 8 20 VDD = 10 V, ID = 1 A, P-Ch 11 20 N-Ch 8 27 P-Ch 18 32 P-Channel N-Ch 24 38 VDD = -10 V, ID = -1 A, P-Ch 34 55 N-Ch 8 16 P-Ch 34 55 VGS = -4.5 V, RGEN = 6 (Note 2) m S N-Channel (Note 2) V A P-Channel VGS = 4.5 V, RGEN = 6 nA 21 VGS = 4.5 V, ID =5.5 A,TJ = 125 VGS = -2.5 V, ID =-3.0 A A mV/ 17 VGS = 2.5 V, ID = 4.2 A Unit mV/ VDS = -16 V, VGS = 0 V ID = -250 RDS(on) Max V N-Ch VGS = 4.5 V, ID =5.5A Static Drain-Source On-Resistance Typ VDS = 16V, VGS = 0 V ID = 250 Gate Threshold Voltage Temperature Coefficient A A, Referenced to 25 ID = -250 Zero Gate Voltage Drain Current A VGS = 0 V, ID = -250 Min N-Channel N-Ch 12 17 VDS =10V,ID=5.5A,VGS=4.5V P-Ch 9.7 16 (Note 2) N-Ch 2 P-Channel P-Ch 2.2 VDS=-5V,ID=-3.8A,VGS=-4.5V N-Ch 3 (Note 2) P-Ch 2.4 ns ns ns ns nC nC nC IC IC SMD Type KDW2521C Electrical Characteristics Ta = 25 Parameter Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Testconditons Symbol IS VSD Min Typ Max N-Ch 0.83 P-Ch -0.83 VGS = 0 V, IS = 0.83A (Not 2) N-Ch 0.7 1.2 VGS = 0 V, IS = -0.83A (Not 2) P-Ch -0.7 -1.2 Unit A V Notes: 1. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design. a) R JA is 125 /W (steady state) when mounted on a 1 inch²copper pad on FR-4. b) R JA is 208 /W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% www.kexin.com.cn 3