Transistors IC SMD Type Complementary PowerTrench Half-Bridge MOSFET KDS4501H Features N-Channel 9.3 A, 30 V RDS(ON) = 18m RDS(ON) = 23m @ VGS = 10 V @ VGS =4.5V P-Channel -5.6 A, -20 V RDS(ON) = 46 m RDS(ON) = 63 m @ VGS =- 4.5 V @ VGS =-2.5V Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Drain to Source Voltage VDSS 30 -20 V Gate to Source Voltage VGS 8 V -5.6 A -20 A Drain Current Continuous (Note 1a) ID Drain Current Pulsed 9.3 20 2.5 Power Dissipation for Single Operation (Note 1a) (Note 1b) PD TJ, TSTG Thermal Resistance Junction to Ambient (Note 1a) (Note 1) 1.2 W 1 (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Case 20 Unit R R -55 to 150 JA 50 /W JC 25 /W www.kexin.com.cn 1 Transistors IC SMD Type KDS4501H Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 IDSS Gate-Body Leakage IGSS VGS(th) A A, Referenced to 25 ID = -250 Zero Gate Voltage Drain Current A VGS = 0 V, ID = -250 ID = 250 Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Testconditons Symbol A, Referenced to 25 30 P-Ch -20 24 P-Ch -13 N-Ch 1 P-Ch -1 VGS = 20V, VDS = 0 V N-Ch 100 VGS = 8 V, VDS = 0 V P-Ch 100 VDS = VGS, ID = 250 A ID = -250 A A, Referenced to 25 A, Referenced to 25 N-Ch 1 1.6 3 P-Ch -0.4 -0.7 -1.5 N-Ch -4 P-Ch 3 Static Drain-Source On-Resistance RDS(on) 14 N-Ch 29 17 23 VGS = -4.5 V, ID =-5.6 A 36 46 P-Ch VGS = -2.5 V, ID =-5.0A On-State Drain Current ID(on) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Crss Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Gate-Drain Charge N-Ch 20 P-Ch -20 VDS = 5V, ID = 9.3A N-Ch 28 VDS = 5V, ID = -5.6A P-Ch 16 N-Ch 1958 P-Ch 1312 N-Ch 424 P-Ch 240 N-Ch 182 P-Ch 106 2 www.kexin.com.cn pF pF pF N-Ch 15 27 P-Ch 15 27 N-Ch 5 10 P-Ch 15 27 (Note 2) P-Channel N-Ch 38 61 VDD = -10 V, ID = -1 A, P-Ch 40 64 N-Ch 10 20 P-Ch 25 40 N-Channel N-Ch 17 27 VDS =15V,ID=9.3A,VGS=4.5V(Note 2) P-Ch 13 21 N-Ch 4 P-Channel P-Ch 2.5 VDS=-15V,ID=-2.4A,VGS=-4.5V(Note 2) N-Ch 5 P-Ch 2.0 VGS = -4.5 V, RGEN = 6 (Note 2) m S VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 V A N-Channel Qgs Qgd 80 63 VGS = -4.5 V, VDS = -5V VDS = 10 V, VGS = 0 V,f = 1.0 MHz Reverse Transfer Capacitance 49 47 VGS = 10 V, VDS = 5V nA 18 VGS = 4.5 V, ID =7.6 A VGS = -4.5 V, ID =-5.6 A,TJ = 125 A mV/ 21 VGS = 10 V, ID = 9.3 A,TJ = 125 Unit mV/ VDS = -16 V, VGS = 0 V ID = 250 RDS(on) Max V N-Ch VGS = 10 V, ID =9.3A Static Drain-Source On-Resistance Typ VDS = 24V, VGS = 0 V VDS = VGS, ID = -250 Gate Threshold Voltage Temperature Coefficient Min N-Ch ns ns ns ns nC nC nC Transistors IC SMD Type KDS4501H Electrical Characteristics Ta = 25 Parameter Symbol Maximum Continuous Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage VSD Testconditons Min Typ Max N-Ch 2.1 P-Ch -2.1 VGS = 0 V, IS = 2.1A (Not 2) N-Ch 1.2 VGS = 0 V, IS = -2.1A (Not 2) P-Ch -1.2 Unit A V www.kexin.com.cn 3