Transistors IC IC SMD Type Product specification KDW2521C Features TSSOP-8 Unit: mm N-Channel 5.5 A, 20 V RDS(ON) = 21m RDS(ON) = 35m @ VGS = 4.5 V @ VGS =2.5V P-Channel -3.8 A, 20 V RDS(ON) = 43 m RDS(ON) = 70 m @ VGS =- 4.5 V @ VGS =-2.5V High performance trench technology for extremely low RDS(ON) Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Unit Drain to Source Voltage VDSS 20 -20 V Gate to Source Voltage VGS Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) PD (Note 1b) TJ, TSTG Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) R V -3.8 A 30 -30 A 12 1 W 0.6 -55 to 150 125 /W 208 /W JA (Note 1b) http://www.twtysemi.com 12 5.5 [email protected] 4008-318-123 1 of 3 IC Transistors IC SMD Type Product specification KDW2521C Electrical Characteristics Ta = 25 Parameter Testconditons Symbol Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 IDSS Gate-Body Leakage IGSS Gate Threshold Voltage VGS(th) A, Referenced to 25 N-Ch 20 P-Ch -20 14 P-Ch -16 N-Ch 1 P-Ch -1 VGS = 12V, VDS = 0 V N-Ch 100 VGS = 12 V, VDS = 0 V P-Ch 100 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A A, Referenced to 25 Static Drain-Source On-Resistance RDS(on) N-Ch 0.6 0.8 1.5 P-Ch -0.6 -1.0 -1.5 N-Ch -3.2 P-Ch 3.0 Forward Transconductance ID(on) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Turn-On Rise Time tr 17 N-Ch VGS = 2.5 V, ID = 4.2 A 24 35 23 34 VGS = -4.5 V, ID =-3.8 A 36 43 56 70 49 69 P-Ch VGS = -2.5 V, ID =-3.0 A Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge http://www.twtysemi.com Qgd VGS = 4.5 V, VDS = 5V N-Ch 30 VGS = -4.5 V, VDS = -5V P-Ch -15 VDS = 5V, ID = 5.5A N-Ch 26 VDS = -5V, ID = -3.5A P-Ch 13.2 N-Channel N-Ch 1082 VDS = 10 V, VGS = 0 V,f = 1.0 MHz P-Ch 1030 N-Ch 277 P-Ch 280 VDS = -10 V, VGS = 0 V,f = 1.0 MHz N-Ch 130 P-Ch 120 pF pF pF N-Ch 8 20 VDD = 10 V, ID = 1 A, P-Ch 11 20 N-Ch 8 27 P-Ch 18 32 P-Channel N-Ch 24 38 VDD = -10 V, ID = -1 A, P-Ch 34 55 N-Ch 8 16 P-Ch 34 55 (Note 2) N-Channel N-Ch 12 17 VDS =10V,ID=5.5A,VGS=4.5V P-Ch 9.7 16 (Note 2) N-Ch 2 P-Channel P-Ch 2.2 VDS=-5V,ID=-3.8A,VGS=-4.5V N-Ch 3 (Note 2) P-Ch 2.4 [email protected] 4008-318-123 m S N-Channel VGS = -4.5 V, RGEN = 6 V A P-Channel (Note 2) nA 21 VGS = 4.5 V, ID =5.5 A,TJ = 125 VGS = 4.5 V, RGEN = 6 A mV/ A, Referenced to 25 VGS = -4.5 V, ID =-3.8A,TJ = 125 On-State Drain Current Unit mV/ VDS = -16 V, VGS = 0 V ID = -250 RDS(on) Max V N-Ch VGS = 4.5 V, ID =5.5A Static Drain-Source On-Resistance Typ VDS = 16V, VGS = 0 V ID = 250 Gate Threshold Voltage Temperature Coefficient A A, Referenced to 25 ID = -250 Zero Gate Voltage Drain Current A VGS = 0 V, ID = -250 ID = 250 Breakdown Voltage Temperature Coefficient Min ns ns ns ns nC nC nC 2 of 3 IC Transistors IC SMD Type Product specification KDW2521C Electrical Characteristics Ta = 25 Parameter Testconditons Symbol Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS VSD Min Typ Max N-Ch 0.83 P-Ch -0.83 VGS = 0 V, IS = 0.83A (Not 2) N-Ch 0.7 1.2 VGS = 0 V, IS = -0.83A (Not 2) P-Ch -0.7 -1.2 Unit A V Notes: 1. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design. a) R JA is 125 /W (steady state) when mounted on a 1 inch²copper pad on FR-4. b) R JA is 208 /W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://www.twtysemi.com [email protected] 4008-318-123 3 of 3