TYSEMI KDW2521C

Transistors
IC
IC
SMD Type
Product specification
KDW2521C
Features
TSSOP-8
Unit: mm
N-Channel
5.5 A, 20 V
RDS(ON) = 21m
RDS(ON) = 35m
@ VGS = 4.5 V
@ VGS =2.5V
P-Channel
-3.8 A, 20 V RDS(ON) = 43 m
RDS(ON) = 70 m
@ VGS =- 4.5 V
@ VGS =-2.5V
High performance trench technology for extremely low RDS(ON)
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
N-Channel
P- Channel
Unit
Drain to Source Voltage
VDSS
20
-20
V
Gate to Source Voltage
VGS
Drain Current Continuous (Note 1a)
ID
Drain Current Pulsed
Power Dissipation for Single Operation (Note 1a)
PD
(Note 1b)
TJ, TSTG
Operating and Storage Temperature
Thermal Resistance Junction to Ambient (Note 1a)
R
V
-3.8
A
30
-30
A
12
1
W
0.6
-55 to 150
125
/W
208
/W
JA
(Note 1b)
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12
5.5
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IC
Transistors
IC
SMD Type
Product specification
KDW2521C
Electrical Characteristics Ta = 25
Parameter
Testconditons
Symbol
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250
IDSS
Gate-Body Leakage
IGSS
Gate Threshold Voltage
VGS(th)
A, Referenced to 25
N-Ch
20
P-Ch
-20
14
P-Ch
-16
N-Ch
1
P-Ch
-1
VGS =
12V, VDS = 0 V
N-Ch
100
VGS =
12 V, VDS = 0 V
P-Ch
100
VDS = VGS, ID = 250
A
VDS = VGS, ID = -250
A
A, Referenced to 25
Static Drain-Source On-Resistance
RDS(on)
N-Ch
0.6
0.8
1.5
P-Ch
-0.6
-1.0
-1.5
N-Ch
-3.2
P-Ch
3.0
Forward Transconductance
ID(on)
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
17
N-Ch
VGS = 2.5 V, ID = 4.2 A
24
35
23
34
VGS = -4.5 V, ID =-3.8 A
36
43
56
70
49
69
P-Ch
VGS = -2.5 V, ID =-3.0 A
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
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Qgd
VGS = 4.5 V, VDS = 5V
N-Ch
30
VGS = -4.5 V, VDS = -5V
P-Ch
-15
VDS = 5V, ID = 5.5A
N-Ch
26
VDS = -5V, ID = -3.5A
P-Ch
13.2
N-Channel
N-Ch
1082
VDS = 10 V, VGS = 0 V,f = 1.0 MHz
P-Ch
1030
N-Ch
277
P-Ch
280
VDS = -10 V, VGS = 0 V,f = 1.0 MHz
N-Ch
130
P-Ch
120
pF
pF
pF
N-Ch
8
20
VDD = 10 V, ID = 1 A,
P-Ch
11
20
N-Ch
8
27
P-Ch
18
32
P-Channel
N-Ch
24
38
VDD = -10 V, ID = -1 A,
P-Ch
34
55
N-Ch
8
16
P-Ch
34
55
(Note 2)
N-Channel
N-Ch
12
17
VDS =10V,ID=5.5A,VGS=4.5V
P-Ch
9.7
16
(Note 2)
N-Ch
2
P-Channel
P-Ch
2.2
VDS=-5V,ID=-3.8A,VGS=-4.5V
N-Ch
3
(Note 2)
P-Ch
2.4
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m
S
N-Channel
VGS = -4.5 V, RGEN = 6
V
A
P-Channel
(Note 2)
nA
21
VGS = 4.5 V, ID =5.5 A,TJ = 125
VGS = 4.5 V, RGEN = 6
A
mV/
A, Referenced to 25
VGS = -4.5 V, ID =-3.8A,TJ = 125
On-State Drain Current
Unit
mV/
VDS = -16 V, VGS = 0 V
ID = -250
RDS(on)
Max
V
N-Ch
VGS = 4.5 V, ID =5.5A
Static Drain-Source On-Resistance
Typ
VDS = 16V, VGS = 0 V
ID = 250
Gate Threshold Voltage Temperature
Coefficient
A
A, Referenced to 25
ID = -250
Zero Gate Voltage Drain Current
A
VGS = 0 V, ID = -250
ID = 250
Breakdown Voltage Temperature Coefficient
Min
ns
ns
ns
ns
nC
nC
nC
2 of 3
IC
Transistors
IC
SMD Type
Product specification
KDW2521C
Electrical Characteristics Ta = 25
Parameter
Testconditons
Symbol
Maximum Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
IS
VSD
Min
Typ
Max
N-Ch
0.83
P-Ch
-0.83
VGS = 0 V, IS = 0.83A (Not 2)
N-Ch
0.7
1.2
VGS = 0 V, IS = -0.83A (Not 2)
P-Ch
-0.7
-1.2
Unit
A
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference
is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) R
JA
is 125 /W (steady state) when mounted on a 1 inch²copper pad on FR-4.
b) R
JA
is 208 /W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
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[email protected]
4008-318-123
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