IC
IC
SMD Type
HEXFET Power MOSFET
KRF7325
Features
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.8mm)
Available in Tape & Reel
1: Source 1
3: Source 2
2: Gate 1
4: Gate 2
7,8: Drain 1
5,6: Drain 2
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
V
VDS
-12
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
ID
-7.8
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
ID
-6.2
Pulsed Drain Current *1
Drain- Source Voltage
A
IDM
-39
Power Dissipation *2
@Ta= 25
PD
2.0
W
Power Dissipation *2
@Ta = 70
PD
1.3
W
16
W/
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
VGS
TJ, TSTG
8.0
V
-55 to + 150
Junction-to-Drain Lead
R
JL
20
/W
Maximum Junction-to-Ambient *2
R
JA
62.5
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 When mounted on 1 inch square copper board.
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IC
IC
SMD Type
KRF7325
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
RDS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
VGS = 0V, ID = -250 A
Min
V/
24
VGS = -2.5V, ID = -6.2A*1
33
VGS = -1.8V, ID = -3.9A*1
49
gfs
VDS = -10V, ID = -7.8A*1
17
-0.90
-1.0
VDS = -9.6V, VGS = 0V, TJ = 70
-25
VGS = -8.0V
-100
VGS = 8.0V
100
ID = -7.8A
Gate-to-Source Charge
Qgs
VDS = -6.0V
5.0
7.5
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -4.5V
4.7
7.0
Turn-On Delay Time
td(on)
VDD = -6.0V,VGS=-4.5V
9.4
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
22
ID = -1.0A
9.8
RG = 6
240
Input Capacitance
Ciss
VGS = 0V
2020
Output Capacitance
Coss
VDS = -10V
520
Reverse Transfer Capacitance
Crss
f = 1.0MHz
330
Body Diode)
V
A
nA
33
nC
ns
180
tf
Continuous Source Current
m
S
VDS = -9.6V, VGS = 0V
Qg
Total Gate Charge
Unit
V
VGS = -4.5V, ID = -7.8A*1
-0.40
IGSS
Max
0.007
TJ ID = -1mA,Reference to 25
VDS = VGS, ID = -250 A
Gate-to-Source Reverse Leakage
Typ
-12
VGS(th)
IDSS
Drain-to-Source Leakage Current
Testconditons
pF
IS
-2.0
ISM
-39
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse RecoveryCharge
Qrr
*1 Pulse width
400 s; duty cycle
-1.2
V
TJ = 25 , IF =-2.0A
36
54
ns
di/dt = -100A/
28
42
nC
TJ = 25 , IS = -2.0A, VGS = 0V*1
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
2
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s*1