IC IC SMD Type HEXFET Power MOSFET KRF8910 Features Absolute Maximum Ratings Ta = 25 Symbol Rating Drain- Source Voltage Parameter VDS 20 Gate-to-Source Voltage VGS ID 10 Continuous Drain Current,VGS @ 10V TC = 70 ID 8.3 Pulsed Drain Current *1 IDM 82 PD Linear Derating Factor Junction-to-Drain Lead 2 A W 1.3 Maximum Power Dissipation Ta = 70 Operating Junction and Storage Temperature Range V 20 Continuous Drain Current, VGS @ 10V Ta = 25 Maximum Power Dissipation Ta = 25 Unit 0.016 TJ,TSTG R JL -55 to + 150 20 /W 62.5 /W Maximum Junction-to-Ambient *2,3 R JA Single Pulse Avalanche Energy *4 EAS 19 mJ Avalanche Current *1 IAR 8.2 A *1 Repetitive rating; pulse width limited by max. junction temperature. *2 when *3 R mounted on 1 inch square copper board. is measured at TJ of approxmately 90 *4Starting TJ = 25 , L = 0.57mH, RG = 25 , IAS = 8.2A. www.kexin.com.cn 1 IC IC SMD Type KRF8910 Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage Testconditons VGS = 0V, ID = 250A BVDSS Breakdown Voltage Temp. Coefficient V(BR)DSS/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage TJ Min Typ Max 20 V ID = 1mA,Reference to 25 0.015 VGS = 10V, ID = 10A*1 10.7 13.4 VGS = 4.5V, ID = 8.0A*1 14.6 18.3 VGS(th) Unit 1.65 V/ 2.55 V VDS = VGS, ID = 250 A Gate Threshold Voltage Coefficient VGS(th)/ IDSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage Forward Transconductance gfs -4.8 TJ VDS = 16V, VGS = 0V 1.0 VDS = 16V, VGS = 0V, TJ = 125 150 VGS = 20V 100 VGS = -20V -100 VDS = 10V, ID = 8.2A 24 Qg 7.4 Qgs1 2.4 Post-Vth Gate-to-Source Charge Qgs2 Gate-to-Drain Charge Qgd 2.5 Qgodr 1.7 Qsw 3.3 Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Qoss Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time Fall Time ID = 8.2A,VGS = 4.5V,VDS = 10V VDS = 10V, VGS = 0V 11 nC 4.4 6.2 VDD = 10V, VGS = 4.5V,ID = 8.2A 10 td(off) 9.7 tf 4.1 Ciss VGS = 0V 960 Output Capacitance Coss VDS = 10V 300 Reverse Transfer Capacitance Crss f = 1.0MHz 160 Body Diode) nA 0.80 Input Capacitance Continuous Source Current A S Pre-Vth Gate-to-Source Charge Total Gate Charge mV/ ns pF IS 2.5 ISM 82 A Pulsed Source Current Body Diode) *2 Diode Forward Voltage VSD 1.0 V ns Reverse Recovery Time trr TJ = 25 , IF =8.2A,VDD=10V 17 26 Reverse RecoveryCharge Qrr di/dt = 100A/ 6.5 9.7 *1 Pulse width 400 s; duty cycle 2%. *2 Repetitive rating; pulse width limited bymax 2 TJ = 25 , IS = 8.2A, VGS = 0V*1 www.kexin.com.cn s*1 C