isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC5039 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 70 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC5039 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 800 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 2.0 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC=0 10 μA hFE DC Current Gain IC= 0.3A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 40 pF Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 5V 10 MHz fT B 10 Switching Times; Resistive Load ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 2.5A; IB1= -IB2= 0.5A; VCC= 150V 2 1.0 μs 3.0 μs 0.8 μs