isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC5321 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR) CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC5321 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 800 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC=0 10 μA hFE-1 DC Current Gain IC= 0.6A; VCE= 5V 15 hFE-2 DC Current Gain IC= 3A; VCE= 5V 8 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 65 pF Current-Gain—Bandwidth Product IC= 0.6A ;VCE= 10V; ftest= 1MHz 14 MHz fT B B B 40 Switching Times 0.5 μs 6.5 μs Fall Time 0.3 μs ton Turn-On Time 0.5 μs ts Storage Time 3.0 μs tf Fall Time 0.3 μs ton Turn-On Time ts Storage Time tf isc Website：www.iscsemi.cn IC= 1A; IB1= -IB2=0.2A; VCC= 125V IC= 4A; IB1= 0.8A; IB2= -1.6A; VCC= 250V 2