isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC5030F DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC5030F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 3A ; IB2= 0.6A; L= 2mH,Clamped 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1100 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 10 μA hFE-1 DC Current Gain IC= 0.4A; VCE= 5V 10 hFE-2 DC Current Gain IC= 2A; VCE= 5V 8 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 120 pF Current-Gain—Bandwidth Product IC= 0.4A ; VCE= 10V 15 MHz fT B B 40 Switching Times; Resistive Load ton Turn-On Time ts Storage Time tf Fall Time IC= 4A; IB1= 0.8A; IB2= -1.6A; VCC= 400V; RL= 100Ω hFE-1 Classifications N R O 10-20 15-30 20-40 isc Website：www.iscsemi.cn 2 0.5 μs 3.0 μs 0.3 μs