ISC KSC5030F

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
KSC5030F
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 800V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
3
A
PC
Collector Power Dissipation
@ TC=25℃
60
W
TJ
Junction Temperature
150
℃
-55~150
℃
B
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
KSC5030F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEX(SUS)
Collector-Emitter Sustaining Voltage
IC= 3A ; IB2= 0.6A;
L= 2mH,Clamped
800
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
1100
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; RBE= ∞
800
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
2.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
10
μA
hFE-1
DC Current Gain
IC= 0.4A; VCE= 5V
10
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
8
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
120
pF
Current-Gain—Bandwidth Product
IC= 0.4A ; VCE= 10V
15
MHz
fT
B
B
40
Switching Times; Resistive Load
‹
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
IC= 4A; IB1= 0.8A; IB2= -1.6A;
VCC= 400V; RL= 100Ω
hFE-1 Classifications
N
R
O
10-20
15-30
20-40
isc Website:www.iscsemi.cn
2
0.5
μs
3.0
μs
0.3
μs