isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC5338 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR) CEO= 450V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC5338 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1000 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 9 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A 1.1 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.25 V ICBO Collector Cutoff Current VCB= 800V; VBE= 0 10 μA IEBO Emitter Cutoff Current VEB= 9V; IC=0 10 μA hFE-1 DC Current Gain IC= 0.5A; VCE= 5V 15 hFE-2 DC Current Gain IC= 2A; VCE= 1V 6 COB Output Capacitance IE= 0; VCB= 10V; ftest= 0.1MHz 70 pF Current-Gain—Bandwidth Product IC= 0.1A ;VCE= 6V 14 MHz fT B B B B B 30 Switching Times ton Turn-On Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 1A; IB1= -IB2=0.2A; VCC= 125V 2 0.2 μs 2.0 μs 0.5 μs