isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC5367 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 12 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A IB Base Current-Continuous 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC5367 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1600 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 12 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.25A; IB= 25mA 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 4.5 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 2.5 V Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V ICBO Collector Cutoff Current VCB= 1600V; IE= 0 20 μA IEBO Emitter Cutoff Current VEB= 12V; IC=0 20 μA hFE-1 DC Current Gain IC= 0.4A; VCE= 3V 12 hFE-2 DC Current Gain IC= 5mA; VCE= 10V 8 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz VBE(sat) B B B 35 40 pF Switching Times 0.5 μs 2.2 μs Fall Time 0.5 μs ton Turn-On Time 0.5 μs ts Storage Time 4.0 μs tf Fall Time 0.5 μs ton Turn-On Time ts Storage Time tf isc Website：www.iscsemi.cn IC= 0.5A; IB1= 42mA; IB2= -333mA;VCC= 125V IC= 1A; IB1= 0.2A; IB2= -0.4A;VCC= 250V 2