isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3150 DESCRIPTION ·High Breakdown Voltage: V(BR)CBO= 900V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 1.5 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3150 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 800 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 3A; L= 500μH, IB= 1A 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE=0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 10 μA hFE-1 DC Current Gain IC= 0.2A ; VCE= 5V 10 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 8 COB Output Capacitance IE= 0 ; VCB= 10V; ftest=1.0MHz 60 pF Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 10V 15 MHz fT CONDITIONS MIN TYP. MAX UNIT 40 Switching times ton Turn-on Time tstg Storage Time tf IC= 2A , IB1= 0.4A; IB2= -0.8A RL= 200Ω; VCC=400V Fall Time hFE-1 Classifications K L M 10-20 15-30 20-40 isc Website：www.iscsemi.cn 2 1.0 μs 3.0 μs 0.7 μs INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn isc Product Specification 2SC3150