Transistors IC SMD Type PowerMOS transistor Logic level TOPFET KUK108-50DL TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Vertical power DMOS output stage Low on-state resistance +0.2 4.57-0.2 +0.1 1.27-0.1 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 5 V logic compatible input level Control of power MOSFET and supply of overload protection circuits derived from input Lower operating input current permits direct drive by micro-controller +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2 Latched overload protection reset by input 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 Overload protection against short circuit load 5 .6 0 Overload protection against over temperature +0.1 5.08-0.1 +0.2 0.4-0.2 Input 11Gate Drain 22Drain Source 33Source ESD protection on input pin Overvoltage clamping for turn off of inductive loads Absolute Maximum Ratings Ta = 25 Parameter Symbol Condition Rating Unit Continuous drain source voltage*1 VDS 50 V Continuous input voltage VIS 6 V Continuous drain current ID Tmb 25 13.5 A Continuous drain current ; VIS = 5 V 8.5 A 54 A 40 W ID Tmb 100 IDRM Tmb 25 Total power dissipation PD Tmb 25 Storage temperature Tstg -55 to +150 Tj 150 Tsold 250 Repetitive peak on-state drain current Continuous junction temperature*2 Lead temperature Protection supply voltage*3 ; VIS = 5 V ; VIS = 5 V VISP Protected drain source supply voltage VDDP(T) VIS = 5 V Protected drain source supply voltage*4 VDDP(P) 4 V 50 V VIS = 5 V 24 V Instantaneous overload dissipation PDSM Tmb = 25 0.6 kW Repetitive peak clamping current IDROM VIS = 0 V 15 A Non-repetitive clamping energy EDSM Tmb 200 mJ Repetitive clamping energy EDRM 95 Tmb 250 Hz 20 mJ 2 kV Electrostatic discharge capacitor voltage VC 25 ; IDM = 15 A;VDD 20 V; ; IDM = 8 A;VDD 20 V; f = C = 250 pF; R = 1.5 kÙ www.kexin.com.cn 1 Transistors IC SMD Type KUK108-50DL Absolute Maximum Ratings Ta = 25 Parameter Symbol Junction to mounting base Junction to ambient Rating Unit Rth j-mb 2.5 to3.1 K/W Rth j-a 50 K/W 15 A Continuous forward current IS Condition Tmb 25 ; VIS = 0 V *1Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. *2A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect . the switch *3The input voltage for which the overload protection circuits are functional. *4The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for PDSM, which is always the case when VDS is less than VDDP(P) maximum. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain-source clamping voltage V(CL)DSS VIS = 0 V; ID = 10 mA Drain-source clamping voltage V(CL)DSS VIS = 0 V; IDM = 1 A; tp Min Max 300 ms;d Unit V 0.01 70 V Zero input voltage drain current IDSS VDS = 12 V; VIS = 0 V 0.5 10 ìA Zero input voltage drain current IDSS VDS = 50 V; VIS = 0 V 1 20 ìA Zero input voltage drain current IDSS VDS = 40 V; VIS = 0 V; Tj = 125 10 100 ìA 85 125 mÙ Drain-source on-state resistance*1 RDS(ON) VIS = 5 V; IDM = 7.5 A; tp Overload threshold energy EDS(TO) VDD = 13 V; VIS = 5 V;L 10 ìH; RL = 10 mÙ 0.2 J td sc VDD = 13 V; VIS = 5 V;L 10 ìH; RL = 10 mÙ 0.8 ms ID(SC) VDD = 13 V; VIS = 5 V;L 10 ìH; RL = 10 mÙ 25 A IDM(SC) VIS = 5 V; VDD = 13 V;L 60 A Response time Drain current*2 Peak drain current*3 Threshold junction temperature Forward transconductance Input threshold voltage Input supply current Tj(TO) gfs VIS(TO) IIS VIS = 5 V; from ID 300 ìs;ä 0.01 10 ìH; RL = 10 mÙ 150 0.5 A*4 5 9 VDS = 5 V; ID = 1 mA 1.0 1.5 2.0 V VIS = 5 V 100 200 350 ìA 160 270 ìA 2.6 3.5 V VIS = 3.5 V 330 650 ìA VIS = 5 V 240 430 ìA VDS = 10 V; IDM = 7.5 A tp 300 ms;d 0.01 V=4V Protection reset voltage*5 Input supply current Input breakdown voltage Input series resistance VISR IISL V(BR)IS RIG to gate of power MOSFET Turn-on delay time Rise time Turn-off delay time Fall time 2 Typ 50 www.kexin.com.cn td on tr td off tf Tj = 25 2.0 T = 150 1.0 II = 10 mA 6 s V Tj = 25 33 kÙ Tj = 150 50 kÙ VDD = 13 V; VIS = 5 V 8 ìs RL = 4 Ù 40 ìs VDD = 13 V; VIS = 0 V 40 ìs RL = 4 Ù 35 ìs Transistors IC SMD Type KUK108-50DL Electrical Characteristics Ta = 25 Parameter Forward voltage Symbol VSDO Testconditons IS = 15 A; VIS = 0 V; tp = 300 ms Min Typ Max Unit 1.0 1.5 V Reverse recovery time trr Internal drain inductance Ld 2.5 nH Internal source inductance Ls 7.5 nH *1Continuous input voltage. The specified pulse width is for the drain current. *2Continuous drain-source supply voltage. Pulsed input voltage. *3Continuous input voltage. Momentary short circuit load connection. (The higher peak current is due to the effect of capacitance Cgd). *4The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum ID ensures this condition. *5The input voltage below which the overload protection circuits will be reset. www.kexin.com.cn 3