FAIRCHILD ISL9R30120G2

ISL9R30120G2
30A, 1200V Stealth™ Diode
General Description
Features
The ISL9R30120G2 is a Stealth™ diode optimized for low loss
performance in high frequency hard switched applications. The
Stealth™ family exhibits low reverse recovery current
(IRM(REC)) and exceptionally soft recovery under typical
operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low IRM(REC) and short ta phase reduce loss
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 4.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 56ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Formerly developmental type TA49415.
Package
Symbol
JEDEC STYLE 2 LEAD TO-247
ANODE
CATHODE
K
CATHODE
(BOTTOM SIDE
METAL)
A
Device Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VRRM
VRWM
VR
Parameter
Repetitive Peak Reverse Voltage
Ratings
1200
Units
V
Working Peak Reverse Voltage
1200
V
DC Blocking Voltage
1200
V
A
IF(AV)
Average Rectified Forward Current (TC = 80oC)
30
IFRM
Repetitive Peak Surge Current (20kHz Square Wave)
70
A
IFSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
325
A
Power Dissipation
166
W
Avalanche Energy (1A, 40mH)
20
mJ
-55 to 150
°C
300
260
°C
°C
PD
EAVL
TJ, TSTG
TL
TPKG
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
ISL9R30120G2 Rev. A
ISL9R30120G2
May 2002
Device Marking
R30120G2
Device
ISL9R30120G2
Package
TO-247
Tape Width
N/A
Quantity
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
TC = 25°C
-
-
100
µA
TC = 125°C
-
-
1.0
mA
Off State Characteristics
IR
Instantaneous Reverse Current
VR = 1200V
On State Characteristics
VF
Instantaneous Forward Voltage
IF = 30A
TC = 25°C
-
2.8
3.3
V
TC = 125°C
-
2.6
3.1
V
-
115
-
pF
Dynamic Characteristics
CJ
Junction Capacitance
VR = 10V, IF = 0A
Switching Characteristics
trr
trr
IRM(REC)
QRR
Reverse Recovery Time
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
trr
Reverse Recovery Time
S
Softness Factor (tb/ta)
IRM(REC)
QRR
Maximum Reverse Recovery Current
Reverse Recovered Charge
trr
Reverse Recovery Time
S
Softness Factor (tb/ta)
IRM(REC)
QRR
dIM/dt
Maximum Reverse Recovery Current
Reverse Recovered Charge
IF = 1A, dIF/dt = 100A/µs, VR = 15V
-
45
56
ns
IF = 30A, dIF/dt = 100A/µs, VR = 15V
-
80
100
ns
IF = 30A,
dIF/dt = 200A/µs,
VR = 780V, TC = 25°C
-
269
-
ns
-
7.5
-
A
-
930
-
nC
ns
IF = 30A,
dIF/dt = 200A/µs,
VR = 780V,
TC = 125°C
IF = 30A,
dIF/dt = 1000A/µs,
VR = 780V,
TC = 125°C
Maximum di/dt during tb
-
529
-
-
6.2
-
-
-
11
-
A
-
3.0
-
µC
-
260
-
ns
-
4.8
-
-
-
30
-
A
-
3.4
-
µC
-
520
-
A/µs
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
TO-247
-
-
0.75
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-247
-
-
30
°C/W
©2002 Fairchild Semiconductor Corporation
ISL9R30120G2 Rev. A
ISL9R30120G2
Package Marking and Ordering Information
ISL9R30120G2
Typical Performance Curves
1000
60
IF, FORWARD CURRENT (A)
50
IR, REVERSE CURRENT (µA)
150oC
150oC
40
125oC
30
100oC
20
25oC
10
0
0.5
1
1.5
2
2.5
3
3.5
125oC
100
100oC
10
75oC
1
25oC
0.1
0.01
0.2
4
0.3
0.4
VF , FORWARD VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
750
750
VR = 780V, TC = 125oC
0.7
0.8
0.9
1.0
1.1
1.2
VR = 780V, TC = 125oC
625
tb at dIF/dt = 200A/µs, 500A/µs, 800A/µs
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
0.6
Figure 2. Reverse Current vs Reverse Voltage
625
500
375
250
125
0
10
20
30
40
50
tb at IF = 60A, 30A, 15A
500
375
250
125
ta at dIF/dt = 200A/µs, 500A/µs, 800A/µs
ta at IF = 60A, 30A, 15A
0
200
0
60
IF , FORWARD CURRENT (A)
VR = 780V, TC = 125oC
dIF/dt = 800A/µs
30
dIF/dt = 500A/µs
20
dIF/dt = 200A/µs
10
0
0
10
20
30
40
50
60
IF , FORWARD CURRENT (A)
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
©2002 Fairchild Semiconductor Corporation
600
800
1000
1200
Figure 4. ta and tb Curves vs dIF /dt
IRM(REC) , MAX REVERSE RECOVERY CURRENT (A)
40
400
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 3. ta and tb Curves vs Forward Current
IRM(REC) , MAX REVERSE RECOVERY CURRENT (A)
0.5
VR , REVERSE VOLTAGE (KV)
40
VR = 780V, TC = 125oC
35
30
25
IF = 60A
20
IF = 30A
15
10
200
IF = 15A
400
600
800
1000
1200
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 6. Maximum Reverse Recovery Current vs
dIF /dt
ISL9R30120G2 Rev. A
ISL9R30120G2
6.0
9
QRR, REVERSE RECOVERED CHARGE (µC)
VR = 780V, TC = 125oC
8
IF = 60A
7
6
IF = 30A
5
IF = 15A
4
400
600
800
1000
IF = 60A
5.0
4.5
4.0
IF = 30A
3.5
3.0
IF = 15A
2.5
3
200
VR = 780V, TC = 125oC
5.6
2.0
200
1200
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
CJ , JUNCTION CAPACITANCE (pF)
f = 1MHZ
1400
1200
1000
800
600
400
200
0
0.03
0.1
1
10
800
1000
100
-14
1200
400
IF = 30A, VR = 780V, dIF /dt = 500A/µs
IRM(REC)
-16
350
-18
300
-20
250
tRR
-22
25
50
VR , REVERSE VOLTAGE (V)
75
100
125
200
150
TC, CASE TEMPERATURE (oC)
Figure 9. Junction Capacitance vs Reverse Voltage
IF(AV), AVERAGE FORWARD CURRENT (A)
600
Figure 8. Reverse Recovery Charge vs dIF/dt
IRM(REC) , MAX REVERSE RECOVERY CURRENT (A)
Figure 7. Reverse Recovery Softness Factor vs
dIF /dt
1600
400
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
t, RECOVERY TIMES (ns)
S, REVERSE RECOVERY SOFTNESS FACTOR
Typical Performance Curves (Continued)
Figure 10. Maximum Reverse Recovery Current
and trr vs Case Temperature
35
30
25
20
15
10
5
0
60
70
80
90
100
110
120
130
140
150
TC, CASE TEMPERATURE (oC)
Figure 11. DC CURRENT DERATING CURVE
©2002 Fairchild Semiconductor Corporation
ISL9R30120G2 Rev. A
ISL9R30120G2
Typical Performance Curves (Continued)
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
ZθJA, NORMALIZED
THERMAL IMPEDANCE
1.0
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
101
Figure 12. Normalized Maximum Transient Thermal Impedance
Test Circuit and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
IF
DUT
RG
CURRENT
SENSE
dIF
trr
dt
ta
tb
0
+
VGE
-
MOSFET
t1
0.25 IRM
VDD
IRM
t2
Figure 13. trr Test Circuit
Figure 14. trr Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1Ω
VDD = 50V
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
CURRENT
SENSE
VAVL
R
+
VDD
Q1
VDD
DUT
IL
t0
Figure 15. Avalanche Energy Test Circuit
©2002 Fairchild Semiconductor Corporation
IL
I V
t1
t2
t
Figure 16. Avalanche Current and Voltage
Waveforms
ISL9R30120G2 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST â
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC â
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench â
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER â UHC™
SMART START™
UltraFET â
SPM™
VCX™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
STAR*POWER is used under license
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H5