ISL9R30120G2 30A, 1200V Stealth™ Diode General Description Features The ISL9R30120G2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 4.5 • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 56ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V • Avalanche Energy Rated Applications • Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD • Snubber Diode Formerly developmental type TA49415. Package Symbol JEDEC STYLE 2 LEAD TO-247 ANODE CATHODE K CATHODE (BOTTOM SIDE METAL) A Device Maximum Ratings TC = 25°C unless otherwise noted Symbol VRRM VRWM VR Parameter Repetitive Peak Reverse Voltage Ratings 1200 Units V Working Peak Reverse Voltage 1200 V DC Blocking Voltage 1200 V A IF(AV) Average Rectified Forward Current (TC = 80oC) 30 IFRM Repetitive Peak Surge Current (20kHz Square Wave) 70 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 325 A Power Dissipation 166 W Avalanche Energy (1A, 40mH) 20 mJ -55 to 150 °C 300 260 °C °C PD EAVL TJ, TSTG TL TPKG Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. A ISL9R30120G2 May 2002 Device Marking R30120G2 Device ISL9R30120G2 Package TO-247 Tape Width N/A Quantity 30 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units TC = 25°C - - 100 µA TC = 125°C - - 1.0 mA Off State Characteristics IR Instantaneous Reverse Current VR = 1200V On State Characteristics VF Instantaneous Forward Voltage IF = 30A TC = 25°C - 2.8 3.3 V TC = 125°C - 2.6 3.1 V - 115 - pF Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A Switching Characteristics trr trr IRM(REC) QRR Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRM(REC) QRR Maximum Reverse Recovery Current Reverse Recovered Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRM(REC) QRR dIM/dt Maximum Reverse Recovery Current Reverse Recovered Charge IF = 1A, dIF/dt = 100A/µs, VR = 15V - 45 56 ns IF = 30A, dIF/dt = 100A/µs, VR = 15V - 80 100 ns IF = 30A, dIF/dt = 200A/µs, VR = 780V, TC = 25°C - 269 - ns - 7.5 - A - 930 - nC ns IF = 30A, dIF/dt = 200A/µs, VR = 780V, TC = 125°C IF = 30A, dIF/dt = 1000A/µs, VR = 780V, TC = 125°C Maximum di/dt during tb - 529 - - 6.2 - - - 11 - A - 3.0 - µC - 260 - ns - 4.8 - - - 30 - A - 3.4 - µC - 520 - A/µs Thermal Characteristics RθJC Thermal Resistance Junction to Case TO-247 - - 0.75 °C/W RθJA Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W ©2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. A ISL9R30120G2 Package Marking and Ordering Information ISL9R30120G2 Typical Performance Curves 1000 60 IF, FORWARD CURRENT (A) 50 IR, REVERSE CURRENT (µA) 150oC 150oC 40 125oC 30 100oC 20 25oC 10 0 0.5 1 1.5 2 2.5 3 3.5 125oC 100 100oC 10 75oC 1 25oC 0.1 0.01 0.2 4 0.3 0.4 VF , FORWARD VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 750 750 VR = 780V, TC = 125oC 0.7 0.8 0.9 1.0 1.1 1.2 VR = 780V, TC = 125oC 625 tb at dIF/dt = 200A/µs, 500A/µs, 800A/µs t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 0.6 Figure 2. Reverse Current vs Reverse Voltage 625 500 375 250 125 0 10 20 30 40 50 tb at IF = 60A, 30A, 15A 500 375 250 125 ta at dIF/dt = 200A/µs, 500A/µs, 800A/µs ta at IF = 60A, 30A, 15A 0 200 0 60 IF , FORWARD CURRENT (A) VR = 780V, TC = 125oC dIF/dt = 800A/µs 30 dIF/dt = 500A/µs 20 dIF/dt = 200A/µs 10 0 0 10 20 30 40 50 60 IF , FORWARD CURRENT (A) Figure 5. Maximum Reverse Recovery Current vs Forward Current ©2002 Fairchild Semiconductor Corporation 600 800 1000 1200 Figure 4. ta and tb Curves vs dIF /dt IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 40 400 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 3. ta and tb Curves vs Forward Current IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 0.5 VR , REVERSE VOLTAGE (KV) 40 VR = 780V, TC = 125oC 35 30 25 IF = 60A 20 IF = 30A 15 10 200 IF = 15A 400 600 800 1000 1200 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 6. Maximum Reverse Recovery Current vs dIF /dt ISL9R30120G2 Rev. A ISL9R30120G2 6.0 9 QRR, REVERSE RECOVERED CHARGE (µC) VR = 780V, TC = 125oC 8 IF = 60A 7 6 IF = 30A 5 IF = 15A 4 400 600 800 1000 IF = 60A 5.0 4.5 4.0 IF = 30A 3.5 3.0 IF = 15A 2.5 3 200 VR = 780V, TC = 125oC 5.6 2.0 200 1200 dIF /dt, CURRENT RATE OF CHANGE (A/µs) CJ , JUNCTION CAPACITANCE (pF) f = 1MHZ 1400 1200 1000 800 600 400 200 0 0.03 0.1 1 10 800 1000 100 -14 1200 400 IF = 30A, VR = 780V, dIF /dt = 500A/µs IRM(REC) -16 350 -18 300 -20 250 tRR -22 25 50 VR , REVERSE VOLTAGE (V) 75 100 125 200 150 TC, CASE TEMPERATURE (oC) Figure 9. Junction Capacitance vs Reverse Voltage IF(AV), AVERAGE FORWARD CURRENT (A) 600 Figure 8. Reverse Recovery Charge vs dIF/dt IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) Figure 7. Reverse Recovery Softness Factor vs dIF /dt 1600 400 dIF /dt, CURRENT RATE OF CHANGE (A/µs) t, RECOVERY TIMES (ns) S, REVERSE RECOVERY SOFTNESS FACTOR Typical Performance Curves (Continued) Figure 10. Maximum Reverse Recovery Current and trr vs Case Temperature 35 30 25 20 15 10 5 0 60 70 80 90 100 110 120 130 140 150 TC, CASE TEMPERATURE (oC) Figure 11. DC CURRENT DERATING CURVE ©2002 Fairchild Semiconductor Corporation ISL9R30120G2 Rev. A ISL9R30120G2 Typical Performance Curves (Continued) DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 ZθJA, NORMALIZED THERMAL IMPEDANCE 1.0 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 12. Normalized Maximum Transient Thermal Impedance Test Circuit and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE dIF trr dt ta tb 0 + VGE - MOSFET t1 0.25 IRM VDD IRM t2 Figure 13. trr Test Circuit Figure 14. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1Ω VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE VAVL R + VDD Q1 VDD DUT IL t0 Figure 15. Avalanche Energy Test Circuit ©2002 Fairchild Semiconductor Corporation IL I V t1 t2 t Figure 16. Avalanche Current and Voltage Waveforms ISL9R30120G2 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC â OPTOPLANAR PACMAN POP Power247 PowerTrench â QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER â UHC SMART START UltraFET â SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5