FF1N30HS60DD 30A, 600V Stealth™ Diode General Description Features The FF1N30HS60DD is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2 • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 35ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V • Fully Isolated Package (2,500 volt AC) This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Applications Formerly developmental type TA49411. • SMPS FWD • Extremely Low Switching Losses • Avalanche Energy Rated • Switch Mode Power Supplies • Hard Switched CCM PFC Boost Diode • UPS and Motor Drive Free Wheeling Diode • Snubber Diode Package Symbol JEDEC SOT-227 K K A A Device Maximum Ratings (per diode) TC = 25°C unless otherwise noted Symbol VRRM Parameter Repetitive Peak Reverse Voltage Ratings 600 Units V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current (TC = 110oC) 30 A IFRM Repetitive Peak Surge Current (20kHz Square Wave) 70 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 325 A Power Dissipation 136 W Avalanche Energy (1A, 40mH) 20 mJ VRWM VR PD EAVL TJ, TSTG Md TL TPKG Operating and Storage Temperature Range Mounting force Terminal connection torque Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 -55 to 175 °C 1.5/13 1.5/13 Nm/lb.in. Nm/lb.in. 300 260 °C °C CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2003 Fairchild Semiconductor Corporation FFH1N30HS60DD RevA FF1N30HS60DD May 2003 Device Marking FF1N30HS60DD Device FF1N30HS60DD Package SOT-227 Tape Width - Quantity 10 Electrical Characteristics (per diode) TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics IR Instantaneous Reverse Current TC = 25°C - - 100 µA TC = 125°C - - 1.0 mA TC = 25°C - 2.1 2.4 V TC = 125°C - 1.7 2.1 V VR = 10V, IF = 0A - 120 - pF ns VR = 600V On State Characteristics VF Instantaneous Forward Voltage IF = 30A Dynamic Characteristics CJ Junction Capacitance Switching Characteristics trr trr IRM(REC) QRR Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRM(REC) QRR Maximum Reverse Recovery Current Reverse Recovered Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRM(REC) QRR dIM/dt Maximum Reverse Recovery Current Reverse Recovered Charge IF = 1A, dIF/dt = 100A/µs, VR = 30V - 27 35 IF = 30A, dIF/dt = 100A/µs, VR = 30V - 36 45 ns IF = 30A, dIF/dt = 200A/µs, VR = 390V, TC = 25°C - 36 - ns - 2.9 - A - 55 - nC ns IF = 30A, dIF/dt = 200A/µs, VR = 390V, TC = 125°C - 110 - - 1.9 - - 6 - A - 450 - nC IF = 30A, dIF/dt = 1000A/µs, VR = 390V, TC = 125°C - 60 - ns - 1.25 - Maximum di/dt during tb - 21 - A 730 - nC 800 - A/µs Thermal Characteristics RθJC Thermal Resistance Junction to Case - - 1.1 °C/W RθJA Thermal Resistance Junction to Ambient SOT-227 - - 12 °C/W ©2003 Fairchild Semiconductor Corporation FFH1N30HS60DD RevA FF1N30HS60DD Package Marking and Ordering Information FF1N30HS60DD Typical Performance Curves 5000 60 175oC o 175 C 1000 25oC 150oC IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 50 40 o 125 C 30 20 100oC 10 0.5 1.0 1.5 2.0 2.5 125oC 100 100oC 75oC 10 1 25oC 0.1 100 0 0 150oC 3.0 500 600 Figure 2. Reverse Current vs Reverse Voltage 120 100 VR = 390V, TJ = 125oC 90 VR = 390V, TJ = 125oC tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs 100 t, RECOVERY TIMES (ns) 80 t, RECOVERY TIMES (ns) 400 VR , REVERSE VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 70 60 50 40 30 20 tb AT IF = 60A, 30A, 15A 80 60 40 20 10 ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs ta AT IF = 60A, 30A, 15A 0 200 0 0 10 20 30 40 50 60 400 IF, FORWARD CURRENT (A) dIF/dt = 800A/µs 18 16 14 dIF/dt = 500A/µs 12 10 8 dIF/dt = 200A/µs 6 4 0 10 20 30 40 50 60 IF, FORWARD CURRENT (A) Figure 5. Maximum Reverse Recovery Current vs Forward Current ©2003 Fairchild Semiconductor Corporation 800 1000 1200 1400 1600 Figure 4. ta and tb Curves vs dIF/dt IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 20 VR = 390V, TJ = 125oC 600 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 3. ta and tb Curves vs Forward Current IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 300 200 VF, FORWARD VOLTAGE (V) 30 VR = 390V, TJ = 125oC IF = 60A 25 IF = 30A 20 IF = 15A 15 10 5 0 200 400 600 800 1000 1200 1400 1600 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 6. Maximum Reverse Recovery Current vs dIF/dt FFH1N30HS60DD RevA FF1N30HS60DD 2.5 1200 QRR, REVERSE RECOVERED CHARGE (nC) S, REVERSE RECOVERY SOFTNESS FACTOR Typical Performance Curves (Continued) VR = 390V, TJ = 125oC IF = 60A 2.25 2.0 IF = 30A 1.75 1.5 1.25 IF = 15A 1.0 0.75 0.5 200 400 600 800 1000 1200 1400 VR = 390V, TJ = 125oC 1000 600 IF = 15A 400 200 200 1600 IF = 30A 800 dIF /dt, CURRENT RATE OF CHANGE (A/µs) 400 600 800 1000 1200 1400 1600 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 7. Reverse Recovery Softness Factor vs dIF/dt Figure 8. Reverse Recovered Charge vs dIF/dt 35 IF(AV) , AVERAGE FORWARD CURRENT (A) 1000 CJ , JUNCTION CAPACITANCE (pF) IF = 60A 800 600 400 200 0 30 25 20 15 10 5 0 0.1 1 10 100 105 115 125 VR , REVERSE VOLTAGE (V) 135 145 155 165 175 TC, CASE TEMPERATURE Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve 2.0 THERMAL IMPEDANCE ZθJA, NORMALIZED 1.0 0.1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) Figure 11. Normalized Maximum Transient Thermal Impedance ©2003 Fairchild Semiconductor Corporation FFH1N30HS60DD RevA FF1N30HS60DD Test Circuit and Waveforms Typical Performance Curves (Continued) VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE dIF trr dt ta tb 0 + VGE - MOSFET t1 0.25 IRM VDD IRM t2 Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1Ω VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE VAVL R + VDD Q1 VDD DUT IL t0 Figure 14. Avalanche Energy Test Circuit ©2003 Fairchild Semiconductor Corporation IL I V t1 t2 t Figure 15. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I2