MMBTSC1621 NPN Silicon Epitaxial Planar Switching Transistor SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCES 40 V Collector Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 4.5 V Collector Current IC 500 mA Power Dissipation Ptot 200 mW Rthj-a 500 K/W Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Thermal Resistance Form junction to ambient in free air C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSC1621 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit at VCE=1V, IC=10mA hFE 40 - 120 - at VCE=1V, IC=10mA, Ta= -55 OC hFE 20 - - - at VCE=2V, IC=100mA hFE 20 - - - hfe 5 - - - ICBO - - 0.4 µA - - 30 mA VCE(sat) - - 0.25 V VBE(sat) 0.7 - 0.85 V V(BR)CEO 15 - - V V(BR)CES 40 - - V V(BR)CBO 40 - - V V(BR)EBO 4.5 - - V Cob - - 4 pF ts - 5 13 ns ton - 8 12 ns toff - 10 18 ns DC Current Gain Small Signal Current Gain at VCE=10V, IC=1mA, f=100MHz Collector Cutoff Current at VCB=20V at VCB=20V, Tj=125 OC Collector Saturation Voltage at IC=10mA, IB=1mA Base Saturation Voltage at IC=10mA, IB=1mA Collector Emitter Breakdown Voltage at IC=10mA Collector Emitter Breakdown Voltage at IC=10mA Collector Base Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=10mA Output Capacitance at VCB=5V, f=1MHz Storage Time at ICon=IBon= -IBoff=10mA Turn-on Time at IC=10mA, IBon=3mA, VCC=3V Turn-off Time at IC=10mA, IBon=3mA, IBoff=1.5mA, VCC=3V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005