SEMTECH_ELEC MMBTSC1621

MMBTSC1621
NPN Silicon Epitaxial Planar Switching Transistor
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Symbol
Value
Unit
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage
VCES
40
V
Collector Emitter Voltage
VCEO
15
V
Emitter Base Voltage
VEBO
4.5
V
Collector Current
IC
500
mA
Power Dissipation
Ptot
200
mW
Rthj-a
500
K/W
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 to +150
O
Thermal Resistance
Form junction to ambient in free air
C
C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
MMBTSC1621
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
at VCE=1V, IC=10mA
hFE
40
-
120
-
at VCE=1V, IC=10mA, Ta= -55 OC
hFE
20
-
-
-
at VCE=2V, IC=100mA
hFE
20
-
-
-
hfe
5
-
-
-
ICBO
-
-
0.4
µA
-
-
30
mA
VCE(sat)
-
-
0.25
V
VBE(sat)
0.7
-
0.85
V
V(BR)CEO
15
-
-
V
V(BR)CES
40
-
-
V
V(BR)CBO
40
-
-
V
V(BR)EBO
4.5
-
-
V
Cob
-
-
4
pF
ts
-
5
13
ns
ton
-
8
12
ns
toff
-
10
18
ns
DC Current Gain
Small Signal Current Gain
at VCE=10V, IC=1mA, f=100MHz
Collector Cutoff Current
at VCB=20V
at VCB=20V, Tj=125 OC
Collector Saturation Voltage
at IC=10mA, IB=1mA
Base Saturation Voltage
at IC=10mA, IB=1mA
Collector Emitter Breakdown Voltage
at IC=10mA
Collector Emitter Breakdown Voltage
at IC=10mA
Collector Base Breakdown Voltage
at IC=10mA
Emitter Base Breakdown Voltage
at IE=10mA
Output Capacitance
at VCB=5V, f=1MHz
Storage Time
at ICon=IBon= -IBoff=10mA
Turn-on Time
at IC=10mA, IBon=3mA, VCC=3V
Turn-off Time
at IC=10mA, IBon=3mA, IBoff=1.5mA, VCC=3V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005