VISHAY TLWR990

TLWR990.
VISHAY
Vishay Semiconductors
TELUX™
Description
The TELUX™ series is a clear, non diffused LED for
applications where supreme luminous flux is required.
It is designed in an industry standard 7.62 mm square
package utilizing highly developed (AS) AllnGaP
technology.
The supreme heat dissipation of TELUX™ allows
applications at high ambient temperatures.
All packing units are binned for luminous flux, forward
voltage and color to achieve the most homogenous
light appearance in application.
SAE and ECE color requirements for automobile
application are available for color red.
ESD resistivity 2 kV (HBM) according to MIL STD
883D, method 3015.7.
Features
• Utilizing one of the world’s brightest (AS) AllnGaP
technologies
• High luminous flux
• Supreme heat dissipation: RthJP is 90 K/W
• High operating temperature:
Tamb = - 40 to + 110 °C
• Meets SAE and ECE color requirements for the
automobile industry for color red
• Packed in tubes for automatic insertion
• Luminous flux, forward voltage and color categorized for each tube
• Small mechanical tolerances allow precise usage
of external reflectors or lightguides
• Lead-free device
19232
e3 Pb
Pb-free
Applications
Exterior lighting
Dashboard illumination
Tail-, Stop - and Turn Signals of motor vehicles
Replaces small incandescent lamps
Traffic signals and signs
Parts Table
Part
Color, Luminous Intensity
Angle of Half Intensity (±ϕ)
Technology
TLWR9900
Red, φV > 2500 mlm
45 °
AllnGaP on GaAs
TLWR9901
Red, φV > (2500 to 6100) mlm
45 °
AllnGaP on GaAs
Document Number 83213
Rev. 1.6, 31-Aug-04
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1
TLWR990.
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLWR990.
Symbol
Value
Reverse voltage
Parameter
IR = 100 µA
Test condition
VR
10
V
DC Forward current
Tamb ≤ 85 °C
IF
70
mA
Surge forward current
tp ≤ 10 µs
Power dissipation
Tamb ≤ 85 °C
Unit
IFSM
0.1
A
PV
187
mW
Tj
125
°C
Operating temperature range
Tamb
- 40 to + 110
°C
Storage temperature range
Tstg
- 55 to + 110
°C
Tsd
260
°C
RthJA
200
K/W
Junction temperature
Soldering temperature
t ≤ 5 s, 1.5 mm from body
preheat temperature
100 °C/ 30 sec.
Thermal resistance junction/
ambient
with cathode heatsink
of 70 mm2
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLWR9900
Parameter
Total flux
Symbol
Min
Typ.
IF = 70 mA, RthJA = 200 °K/W
Test condition
φV
2500
3200
611
615
Max
Unit
mlm
Luminous intensity/Total flux
IF = 70 mA, RthJA = 200 °K/W
IV/φV
Dominant wavelength
IF = 70 mA, RthJA = 200 °K/W
λd
0.7
Peak wavelength
IF = 70 mA, RthJA = 200 °K/W
λp
624
nm
Angle of half intensity
IF = 70 mA, RthJA = 200 °K/W
ϕ
± 45
deg
ϕ0.9V
mcd/mlm
634
100
nm
deg
Total included angle
90 % of Total Flux Captured
Forward voltage
IF = 70 mA, RthJA = 200 °K/W
VF
1.83
2.2
Reverse voltage
IR = 100 µA
VR
10
20
Temperature coefficient < λd
IF = 70 mA
TCλd
17
nm/K
Temperature coefficient VF
IF = 70 mA, T > - 25 °C
TCVF
- 2.9
mV/K
2.7
V
V
<np>
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Document Number 83213
Rev. 1.6, 31-Aug-04
TLWR990.
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
0°
I V rel - Relative Luminous Intensity
PV – Power Dissipation ( mW )
200
175
Red
150
125
100
75
50
25
RthJA=200K/W
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0
0
15982
20
40
60
80
100 120
Tamb – Ambient Temperature ( qC )
Figure 1. Power Dissipation vs. Ambient Temperature
0.6
0.4
16200
0.2
0
0.2
0.4
Angular Displacement
0.6
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
100
90
Red
% Total Luminous Flux
I F – Forward Current ( mA )
100
80
60
40
20
80
70
60
50
40
30
20
10
RthJA=200K/W
0
0
0
0
15983
20
40
60
80
100 120
Tamb – Ambient Temperature ( qC )
16731
0.12
230
0.10
220
0.06
75
100
125
Padsize 8 mm 2
per Anode Pin
210
0.005
0.05
0.5
0.08
50
Figure 5. Percentage Total Luminous Flux vs. Total Included Angle
for 90 ° emission angle
R thJA in K/W
I F –Forward Current (A)
Figure 2. Forward Current vs. Ambient Temperature
25
Total Included Angle (Degrees)
16201
0.04
200
190
180
0.02
170
0.00
10–5 10–4 10–3 10–2 10–1 100
tp – Pulse Length (ms)
160
101
102
Figure 3. Forward Current vs. Pulse Length
Document Number 83213
Rev. 1.6, 31-Aug-04
0
16009
50
100 150 200 250
Cathode Padsize in mm 2
300
Figure 6. Thermal Resistance Junction Ambient vs. Cathode
Padsize
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TLWR990.
VISHAY
Vishay Semiconductors
Package Dimensions in mm
15984
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Document Number 83213
Rev. 1.6, 31-Aug-04
TLWR990.
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83213
Rev. 1.6, 31-Aug-04
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