VISHAY TLHW5400

TLHW5400
Vishay Semiconductors
White LED in 5mm (T13/4) Waterclear Package
Color
White
Type
Technology
TLHW5400
InGaN / YAG on SiC
Angle of Half Intensity
±ö
30°
Description
94 8631
High Intensity LED with typical color coordinates
x = 0.33, y = 0.33 (typical color temperature 5500k).
This LED emits white light with a high color rendering
index. The emission spectrum is tuned for ideal white,
without the impression of being blue shaded or ”cold”.
The package is a standard T 1 3/4.
The internal reflector is filled with a compound of YAG
phoshor and an elastic resin.
Therefore the chip is better protected against
temperature cycle stress.
The phosphor converts the blue emission of the InGaN
chip partially to amber, which mixes with the remaining
blue to produce white.
Features
D High efficient InGaN technology
D Chromaticity coordinate categorized according
to CIE1931 per packing unit
D Typical chromaticity coordinates
x = 0.33, y = 0.33
D
D
D
D
Applications
Indicator and backlighting
Indoor and outdoor message panels
Flat backlight for LCDs, switches and symbols
Alternative to incandescent lamps
Marker lights
Typical color temperature 5500K
ESD class 1
Wide viewing angle
Chip embedded in elastic resin, improved
robustness against temperature cycle stress
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
TLHW5400
Parameter
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Document Number 83149
Rev. A4, 05-Apr-01
Test Conditions
Tamb ≤ 56°C
tp ≤ 10 ms
Tamb ≤ 56°C
t≤5s
Symbol
VR
IF
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
5
30
0.1
126
100
–40 to +100
–40 to +100
260
350
Unit
V
mA
A
mW
°C
°C
°C
°C
K/W
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TLHW5400
Vishay Semiconductors
Optical and Electrical Characteristics
Tamb = 25_C, unless otherwise specified
White (TLHW5400 )
Parameter
Luminous intensity
Chromaticity coordinate x acc.
to CIE 1931
Chromaticity coordinate y acc.
to CIE 1931
Angle of half intensity
Forward voltage
Reverse voltage
Temperature coefficient of VF
Temperature coefficient of IV
Test Conditions
IF = 20 mA
IF = 20 mA
Type
TLHW5400
TLHW5400
Symbol
IV
x
IF = 20 mA
TLHW5400
y
0.33
ϕ
VF
VR
TCVF
TCIV
±30
3.5
IF = 20 mA
IF = 20 mA
IR = 10 mA
IF = 20 mA
IF = 20 mA
Min
130
Typ
350
0.33
Max
Unit
mcd
deg
V
V
mV/K
%/K
4.2
5
–4
– 0.5
Chromaticity Coordinate Classification
Gro p
Group
3
4
5
X
min
0.280
0.305
0.330
Y
max
0.325
0.350
0.375
min
0.210
0.260
0.310
max
0.340
0.390
0.440
140
35
120
30
I F – Forward Current ( mA )
PV – Power Dissipation ( mW )
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
100
80
60
40
20
0
25
20
15
10
5
0
0
10 20 30 40 50 60 70 80 90 100
16289
Tamb – Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
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2 (5)
0
16290
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
Document Number 83149
Rev. A4, 05-Apr-01
TLHW5400
Vishay Semiconductors
2.0
1.00
0.10
0.01
1
IF – Forward Current ( mA )
1.2
1.0
0.8
0.6
0.4
0.2
0
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
f – Chromaticity coordinate shift (x,y)
0.345
10
1
0.340
X
0.335
0.330
Y
0.325
0.320
0.315
2
2.5
3.0
3.5
4.0
4.5
0
5.0
VF – Forward Voltage ( V )
16198
Figure 4. Forward Current vs. Forward Voltage
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
400 450 500 550 600 650 700 750 800
l – Wavelength ( nm )
Figure 5. Relative Luminous Intensity vs. Wavelength
Document Number 83149
Rev. A4, 05-Apr-01
10
20
30
40
50
60
IF – Forward Current (mA)
Figure 7. Chromaticity Coordinate Shift vs.
Forward Current
3.95
3.90
I F Forward Voltage ( V )
I Vrel– Relative Luminous Intensity
10 20 30 40 50 60 70 80 90 100
Tamb – Ambient Temperature ( °C )
16197
100
I F – Forward Current ( mA )
1.4
100
Figure 3. Relative Luminous Intensity vs. Forward Current
16196
IF = 10 mA
1.6
0
10
16194
16195
1.8
I Vrel– Relative Luminous Intensity
I Vrel– Relative Luminous Intensity
10.00
3.85
3.80
3.75
3.70
3.65
3.60
3.55
3.50
3.45
0
16199
10 20 30 40 50 60 70 80 90 100
Tamb Temperature ( °C )
Figure 8. Forward Voltage vs. Ambient Temperature
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3 (5)
TLHW5400
Vishay Semiconductors
S rel – Relative Sensitivity
0°
10
°
20
°
30°
0.50
D65
40°
0.40
b
50°
0.8
60°
70°
0.7
0.35
a
0.30
0.25
80°
0.6
0.4
0.2
0
0.2
0.4
0.2
0.2
0.6
16284
94 8351
Figure 9. Rel. Luminous Intensity vs.
Angular Displacement
d
3
0.25
0.30
f
A
5
c
1.0
0.9
ÇÇ
.
ÉÉ
ÇÇ
ÉÉ
ÇÇ
.
ÇÇ
ÉÉ
ÇÇ
ÇÇ
ÉÉ
ÇÇ
ÇÇ
ÉÉ
ÇÇ
e
0.45
4
0.35
a = 20000K
b = 10000K
c = 7000K
d = 6000K
e = 5000K
f = 4000K
0.40
0.45
0.50
Coordinates of Colorgroups
Figure 10. Coordinates of Colorgroups
Dimensions in mm
16291
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Document Number 83149
Rev. A4, 05-Apr-01
TLHW5400
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 83149
Rev. A4, 05-Apr-01
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