VP2410L Vishay Siliconix P-Channel 240-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Power Supply, Converters D Motor Control D Switches High-Side Switching Secondary Breakdown Free: –255 V Low On-Resistance: 8 W Low-Power/Voltage Driven Excellent Thermal Stability Ease in Driving Switches Full-Voltage Operation Low Offset Voltage Easily Driven Without Buffer No High-Temperature “Run-Away” TO-226AA (TO-92) S 1 G 2 “S” VP 2410L xxyy 3 “S” = Siliconix Logo xxyy = Date Code D Device Marking Front View Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limits Drain-Source Voltage VDS –240 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range TA= 100_C V –0.18 ID IDM TA= 25_C Unit –0.11 A –0.72 0.8 PD 0.32 W RthJA 156 _C/W TJ, Tstg –55 to 150 _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70211 S-04279—Rev. D, 16-Jun-01 www.vishay.com 11-1 VP2410L Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typa VGS = 0 V, ID = –5 mA –240 –255 Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS VGS(th) VGS = 0 V, ID = –10 mA –255 VDS = VGS, ID = –1 mA –2.1 VDS = VGS, ID = –2.5 mA –0.8 –2.2 VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) "50 VDS = –180 V, VGS = 0 V rDS(on) –150 VGS = –4.5 V, ID = –0.1 A Common Source Output Conductanceb gfs VDS = –10 V, ID = –0.1 A gos VDS = –10 V, ID = –0.05 A –300 m mA mA 6 TJ = 125_C Forward Transconductanceb nA –1 –100 TJ = 125_C VGS = –10 V, ID = –0.1 A Drain-Source On-Resistanceb –2.5 "10 TJ = 125_C VDS = –10 V, VGS = –4.5 V V 125 8 10 14.5 20 W 175 mS 0.125 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS =–25 V, VGS = 0 V f = 1 MHz 65 95 25 30 12 15 pF Switchingc Turn-On Time Turn-Off Time td(on) tr td(off) tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 VDD = –25 V, RL = 250 W ID ^ –0.1 A, VGEN = –10 V RG = 25 W 7 15 18 30 45 70 45 60 ns VPDV24 Document Number: 70211 S-04279—Rev. D, 16-Jun-01 VP2410L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics Output Characteristics for Low Gate Drive –100 –500 –5 V VGS = –10 V –80 ID – Drain Current (mA) ID – Drain Current (mA) –400 –4.5 V –300 –4 V –200 –100 VGS = –4 V –3.6 V –60 –3.4 V –40 –3.2 V –3.0 V –20 –2.8 V –3 V –2.6 V 0 0 0 –1 –2 –3 –4 –5 0 –0.4 –0.8 –1.2 –1.6 –2.0 VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 14 –500 VDS = –15 V 12 TJ = –55_C 25_C rDS(on) – On-Resistance ( Ω ) ID – Drain Current (mA) –400 125_C –300 –200 –100 10 8 ID = –0.20 A 6 ID = –0.1 A 4 2 0 0 0 –1 –2 –3 –4 –5 0 –8 –12 –16 VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature –20 2.25 rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) 16 VGS = –4.5 V rDS(on) – Drain-Source On-Resistance ( Ω ) –4 VGS – Gate-Source Voltage (V) 14 12 10 8 2.00 VGS = –10 V ID = –0.2 A 1.75 1.50 VGS = –4.5 V ID = –0.1 A 1.25 1.00 0.75 0.50 6 0 –100 –200 –300 ID – Drain Current (mA) Document Number: 70211 S-04279—Rev. D, 16-Jun-01 –400 –500 –50 –10 20 70 110 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 VP2410L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region Capacitance 150 –10 VGS = 0 V f = 1 MHz 125 –1 C – Capacitance (pF) ID – Drain Current (mA) TJ = 150_C 125_C 25_C –0.1 –55_C 100 Ciss 75 Coss 50 Crss 25 0 –0.01 0 –1.2 –1.6 –2.0 –2.4 –2.8 –3.2 –3.6 0 VGS – Gate-to-Source Voltage (V) –10 –20 –30 Gate Charge –50 Load Condition Effects on Switching 100 –12 ID = –100 mA td(off) –10 tf t – Switching Time (ns) VGS – Gate-to-Source Voltage (V) –40 VDS – Drain-to-Source Voltage (V) –8 VDS = –120 V –6 –4 –192 V tr 10 td(on) VDD = –25 V RG = 25 W VGS = 0 to –10 V –2 1 0 0 100 200 300 400 500 –10 –100 –1000 ID – Drain Current (mA) Qg – Total Gate Charge (pC) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 0.1 PDM 0.02 t1 Single Pulse t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W 0.01 3. TJM – TA = PDMZthJA(t) 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70211 S-04279—Rev. D, 16-Jun-01