TN3012L Vishay Siliconix N-Channel 300-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) ID (A) 0.8 to 3 0.18 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control Low On-Resistance: 9 Secondary Breakdown Free: 320 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature “Run-Away” TO-226AA (TO-92) S G D 1 Device Marking Front View 2 “S” TN 3012L xxyy “S” = Siliconix Logo xxyy = Date Code 3 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 300 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range TA= 100_C V 0.18 ID IDM TA= 25_C Unit 0.14 A 0.5 0.8 PD 0.32 W RthJA 156 _C/W TJ, Tstg –55 to 150 _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70206 S-04279—Rev. C, 16-Jul-01 www.vishay.com 11-1 TN3012L Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Symbol Test Conditions Min Typa V(BR)DSS VGS = 0 V, ID = 10 A 300 320 VGS(th) VDS = VGS, ID = 0.25 mA 0.8 2.1 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "10 VDS = 120 V, VGS = 0 V 0.1 Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Parameter Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistanceb VDS = 5 V, VGS = 10 V VGS = 4.5 V, ID = 0.14 A rDS(on) TA = 125_C Forward Transconductanceb Diode Forward Voltage 5 TA = 125_C VGS = 10 V, ID = 0.18 A 3.0 0.2 0.5 V nA A A 9 12 11 20 20 40 gfs VDS = 15 V, ID = 0.1 A 160 mS VSD IS = 0.18 A, VGS = 0 V 0.8 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs 3300 VDS = 50 V, VGS = 10 V, ID ^100 mA 38 pC Gate-Drain Charge Qgd 1600 Input Capacitance Ciss 40 Output Capacitance Coss Reverse Transfer Capacitance Crss 3 td(on) 5 10 20 40 25 50 30 60 VDS = 50 V, VGS = 0 V, f = 1 MHz 8 pF Switchingc Turn-On Time Turn-Off Time tr td(off) VDD = 50 V, RL = 500 , ID ^100 mA VGEN = 10 V, RG = 25 tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 s duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 ns VNAS30 Document Number: 70206 S-04279—Rev. C, 16-Jul-01 TN3012L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Transfer Characteristics 1.0 1.0 VGS = 10, 8 V 25_C TA = –55_C 6V 0.8 0.8 I D – Drain Current (A) I D – Drain Current (A) 125_C 5V 0.6 0.4 4V 0.2 0.6 0.4 0.2 3V 0 0 0 4 8 12 16 0 20 2 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Gate-Source Voltage 8 10 On-Resistance vs. Drain Current r DS(on) – On-Resistance ( ) 16 12 ID = 0.5 A 8 ID = 0.1 A 4 VGS = 4.5 V 12 VGS = 10 V 8 4 0 0 0 4 8 12 16 20 0 0.2 0.4 VGS – Gate-to-Source Voltage (V) 2.0 4 V GS(th) – Threshold Voltage (V) 5 1.5 1.0 0.5 –25 0 25 50 75 100 TJ – Junction Temperature (_C) Document Number: 70206 S-04279—Rev. C, 16-Jul-01 0.8 1.0 Threshold Voltage Variance Over Temperature 2.5 0 –50 0.6 ID – Drain Current (A) On-Resistance vs. Junction Temperature r DS(on) – On-Resistance ( ) (Normalized) 6 16 20 r DS(on) – On-Resistance ( ) 4 VGS – Gate-to-Source Voltage (V) 125 150 3 ID = 1 mA 2 1 0 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 TN3012L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Gate Charge Capacitance 10 200 V GS – Gate-to-Source Voltage (V) ID = 0.1 A C – Capacitance (pF) 160 120 80 Ciss 40 Coss 8 6 VDS = 150 V 4 2 Crss 0 0 0 10 20 30 40 50 0 500 VDS – Drain-to-Source Voltage (V) 1000 1500 2000 2500 3000 3500 Qg – Total Gate Charge (nC) Source-Drain Diode Forward Voltage 0.2 TJ = 150_C I S – Source Current (A) 0.1 TJ = 25_C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 VSD – Source-to-Drain Voltage (V) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70206 S-04279—Rev. C, 16-Jul-01