2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V (D-S) MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Low On-Resistance: 3.6 W Low Threshold: 1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 6 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-220SD (Tab-Drain) TO-205AD (TO-39) S D Device Marking Side View Device Marking Front View 1 2N6661 “S” fllxxyy 2 “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code 3 G G D VN88AFD “S” xxyy “S” = Siliconix Logo xxyy = Date Code S G D Top View Front View 2N6661 VN88AFD S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 2N6661 VN88AFD Drain-Source Voltage VDS 90 80 Gate-Source Voltage VGS "20 "30 0.9 1.29 Continuous Drain Current (TJ = 150_C) _ TC = 25_C TC = 100_C Pulsed Drain Currenta Power Dissipation ID IDM TC = 25_C TC = 100_C PD Thermal Resistance, Junction-to-Ambientb RthJA Thermal Resistance, Junction-to-Case RthJC Operating Junction and Storage Temperature Range TJ, Tstg 0.7 0.81 "3 "3 6.25 15 2.5 6 170 8.3 –55 to 150 Unit V A W _ _C/W _C Notes a. Pulse width limited by maximum junction temperature. b. This parameter not registered with JEDEC. Document Number: 70224 S-04279—Rev. C, 16-Jul-01 www.vishay.com 11-1 2N6661/VN88AFD Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N6661 Parameter Symbol Test Conditions Typa VGS = 0 V, ID = 10 mA 125 90 VDS = VGS, ID = 1 mA 1.6 0.8 Min VN88AFD Max Min 2 0.8 Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS VGS(th) TJ = –55_C 1.8 TJ = 125_C 1.3 IGSS TJ = 125_C VDS = 90 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS Drain-Source On-Resistanceb Diode Forward Voltage "100 "500 "500 VDS = 80 V, VGS = 0 V 10 VDS = 0.8 x V(BR)DSS, VGS = 0 V 1 ID(on) 500 rDS(on) nA 1.8 VDS = 10 V, VGS = 10 V 1.8 VGS = 5 V, ID = 0.3 A 3.8 5.3 5.6 VGS = 10 V, ID = 1 A 3.6 4 4 6.7 9 8 gfs VDS = 10 V, ID = 0.5 A 350 VSD IS = 0.86 A, VGS = 0 V 0.9 m mA 500 VDS = 15 V, VGS = 10 V TJ = 125_Cd Forward Transconductanceb "100 10 TJ = 125_C On-State Drain Currentb 2.5 V VDS = 0 V, VGS = "15 V Gate-Body Leakage 80 1.5 A 1.5 170 170 W mS V Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Drain-Source Capacitance Cds VDS = 24 V, VGS = 0 V f = 1 MHz 35 50 50 15 40 40 2 10 10 30 40 6 10 15 8 10 15 pF Switchingc Turn-On Time tON Turn-Off Time tOFF Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. d. This parameter not registered with JEDEC. www.vishay.com 11-2 VDD = 25 V, RL = 23 W ID ^ 1 A, VGEN = 10 V RG = 25 W ns VNDQ09 Document Number: 70224 S-04279—Rev. C, 16-Jul-01 2N6661/VN88AFD Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 1.0 Output Characteristics for Low Gate Drive 100 VGS = 10 V VGS = 3 V 2.8 V 6V 0.8 2.6 V 80 0.6 ID – Drain Current (mA) ID – Drain Current (A) 5V 4V 0.4 3V 0.2 60 2.4 V 40 2.2 V 20 2.0 V 1.8 V 2V 0 0 0 1.0 2.0 3.0 4.0 5.0 0 0.4 VDS – Drain-to-Source Voltage (V) 0.8 1.2 1.6 2.0 VDS – Drain-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 0.5 7 125_C ID – Drain Current (A) rDS(on) – On-Resistance ( Ω ) 6 0.4 25_C 0.3 0.2 VDS = 15 V 0.1 5 4 1.0 A 0.5 A 3 I D = 0.1 A 2 1 0 0 0 2 4 6 8 10 4 8 12 16 VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) 10 rDS(on) – Drain-Source On-Resistance ( Ω ) 0 VGS – Gate-Source Voltage (V) 8 6 VGS = 10 V 4 2 0 20 2.25 VGS = 10 V 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0 0.5 1.0 1.5 ID – Drain Current (A) Document Number: 70224 S-04279—Rev. C, 16-Jul-01 2.0 2.5 –50 –10 30 70 110 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 2N6661/VN88AFD Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region Capacitance 10 125 VGS = 0 V VGS = 5 V f = 1 MHz C – Capacitance (pF) ID – Drain Current (mA) 100 1 TJ = 150_C 0.1 125_C 75 50 C iss C oss 25 25_C –55_C C rss 0.01 0 0.5 1.0 1.5 2.0 0 10 VGS – Gate-to-Source Voltage (V) Gate Charge 30 40 50 Load Condition Effects on Switching 15.0 100 VDD = 25 V RL = 23 W VGS = 0 to 10 V ID = 1.0 A I D = 1.0 A 12.5 t – Switching Time (ns) VGS – Gate-to-Source Voltage (V) 20 VDS – Drain-to-Source Voltage (V) 10.0 VDS = 45 V 7.5 72 V 5.0 10 td(off) tr td(on) tf 2.5 0 1 0 100 200 300 400 500 0.1 1 2 ID – Drain Current (A) Qg – Total Gate Charge (pC) Normalized Effective Transient Thermal Impedance, Junction-to-Case (2N6661) 1.0 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 Single Pulse 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJC = 20_C/W 0.01 3. TJM – TC = PDMZthJC(t) 0.01 0.1 1.0 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70224 S-04279—Rev. C, 16-Jul-01