TN0201L/0401L, VN0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V 0.8 to 2.5 0.64 VN0300LS 30 1.2 @ VGS = 10 V 0.8 to 2.5 0.67 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Low On-Resistance: 0.85 W Low Threshold: 1.4 V Low Input Capacitance: 38 pF Fast Switching Speed: 9 ns Low Input and Output Leakage TO-226AA (TO-92) S 1 G 2 Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-92S (Copper Lead Frame) Device Marking Front View TN0201L “S” TN 0201L xxyy S 1 G 2 Device Marking Front View VN0300LS “S” VN 0300LS xxyy TN0401L “S” = Siliconix Logo xxyy = Date Code 3 “S” TN 0401L xxyy Top View VN0300L Top View TN0201L TN0401L VN0300L “S” VN 0300L xxyy VN0300LS D D 3 “S” = Siliconix Logo xxyy = Date Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol TN0201L TN0401L VN0300L VN0300LS Drain-Source Voltage VDS 20 40 30 30 Gate-Source Voltage VGS "20 "20 "30 "30 0.64 0.64 0.64 0.67 0.38 0.38 0.38 0.43 1.5 1.5 3 3 0.8 0.8 0.8 0.9 0.32 0.32 0.32 0.4 156 156 156 156 Continuous Drain Current (TJ = 150_C) TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation ID IDM TA= 25_C TA= 100_C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range PD RthJA TJ, Tstg –55 to 150 Unit V A W _C/W _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70199 S-04279—Rev. E, 16-Jul-01 www.vishay.com 11-1 TN0201L/0401L, VN0300L/LS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits TN0201L TN0401L Parameter Symbol Typa Min TN0201L 55 20 TN0401L 55 40 VDS = VGS, ID = 0.25 mA 1.4 0.5 VDS = VGS, ID = 1 mA 1.5 Test Conditions Max VN0300L VN0300LS Min Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V ID = 10 mA 30 Gate-Threshold Voltage VGS(th) 0.8 VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS "100 10 VDS = 0.8 x V(BR)DSS, VGS = 0 V Drain-Source On-Resistanceb ID(on) 100 VDS = 10 V, VGS = 4.5 V 0.9 0.25 VDS = 10 V, VGS = 10 V 3.5 1 VGS = 3.5 V, ID = 0.05 A 1.8 VGS = 5 V, ID = 0.3 A 1.2 VGS = 4.5 V, ID = 0.25 A 1.4 2 2.6 4 0.85 1.2 rDS(on) TJ = 125_C VGS = 10 V, ID = 1 A TJ = 125_C Forward Transconductanceb gfs VDS = 10 V, ID = 0.5 A m mA 1 TJ = 125_C On-State Drain Currentb nA 500 TJ = 125_C IDSS 2.5 "10 VDS = 0 V, VGS = "30 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current V 2 4 3.3 W 1.2 1.6 500 A 1 2.4 200 200 mS Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 0 V, f = 1 MHz 38 60 100 33 50 95 8 15 25 10 30 30 13 30 30 pF Switchingc Turn-On Time tON Turn-Off Time tOFF VDD = 15 V, RL = 14 W ID ^ 1 A, VGEN = 10 V RG = 25 W Notes a. For DESIGN AID ONLY, not subject to production testing.. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 ns VNDQ03 Document Number: 70199 S-04279—Rev. E, 16-Jul-01 TN0201L/0401L, VN0300L/LS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 2.0 7V VGS = 10 V Output Characteristics for Low Gate Drive 200 2.9 V 2.7 V 160 ID – Drain Current (mA) 1.6 ID – Drain Current (A) 10 V 6V 5V 1.2 0.8 4V 0.4 120 2.5 V 80 2.3 V 40 3V 2.1 V 1.7 V 2V 0 0 0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2.0 VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 500 TJ = –55_C 3 ID – Drain Current (mA) rDS(on) – On-Resistance ( Ω ) 125_C 400 VDS = 15 V 300 200 100 I D = 0.2 A 0.5 A 2 1.0 A 1 25_C 0 0 0 1 2 3 4 0 5 8 12 16 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature 2.5 20 2.25 2.0 rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) rDS(on) – Drain-Source On-Resistance ( Ω ) 4 VGS = 4.5 V 1.5 6V 1.0 10 V 0.5 0 VGS = 10 V 2.00 I D = 0.5 A 1.75 1.50 0.1 A 1.25 1.00 0.75 0.50 0 1 2 ID – Drain Current (A) Document Number: 70199 S-04279—Rev. E, 16-Jul-01 3 –50 –10 30 70 110 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 TN0201L/0401L, VN0300L/LS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region Capacitance 10 120 VDS = 10 V VGS = 0 V f = MHz 100 C – Capacitance (pF) ID – Drain Current (mA) TJ = 150_C 1 100_C 25_C 0.1 80 60 40 C iss C oss 20 C rss –55_C 0.01 0.6 0 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 10 VGS – Gate-to-Source Voltage (V) Gate Charge 30 50 40 Load Condition Effects on Switching 100 6 VDD = 25 V RG = 25 W VGS = 0 to 10 V ID =1A 5 VDS = 15 V t – Switching Time (ns) VGS – Gate-to-Source Voltage (V) 20 VDS – Drain-to-Source Voltage (V) 4 3 24 V 2 10 td(off) td(on) tf tr 1 1 0.1 0 0 80 160 240 320 400 1 10 ID – Drain Current (A) Qg – Total Gate Charge (pC) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t) 0.01 Single Pulse 0.01 0.1 0.5 1 5 10 50 100 500 1K 5K 10 K t1 – Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70199 S-04279—Rev. E, 16-Jul-01