VISHAY TN0401L

TN0201L/0401L, VN0300L/LS
Vishay Siliconix
N-Channel 20-, 30-, 40-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
V(BR)DSS Min (V)
rDS(on) Max (W)
VGS(th) (V)
ID (A)
TN0201L
20
1.2 @ VGS = 10 V
0.5 to 2
0.64
TN0401L
40
1.2 @ VGS = 10 V
0.5 to 2
0.64
VN0300L
30
1.2 @ VGS = 10 V
0.8 to 2.5
0.64
VN0300LS
30
1.2 @ VGS = 10 V
0.8 to 2.5
0.67
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
Low On-Resistance: 0.85 W
Low Threshold: 1.4 V
Low Input Capacitance: 38 pF
Fast Switching Speed: 9 ns
Low Input and Output Leakage
TO-226AA
(TO-92)
S
1
G
2
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
TO-92S
(Copper Lead Frame)
Device Marking
Front View
TN0201L
“S” TN
0201L
xxyy
S
1
G
2
Device Marking
Front View
VN0300LS
“S” VN
0300LS
xxyy
TN0401L
“S” = Siliconix Logo
xxyy = Date Code
3
“S” TN
0401L
xxyy
Top View
VN0300L
Top View
TN0201L
TN0401L
VN0300L
“S” VN
0300L
xxyy
VN0300LS
D
D
3
“S” = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN0201L
TN0401L
VN0300L
VN0300LS
Drain-Source Voltage
VDS
20
40
30
30
Gate-Source Voltage
VGS
"20
"20
"30
"30
0.64
0.64
0.64
0.67
0.38
0.38
0.38
0.43
1.5
1.5
3
3
0.8
0.8
0.8
0.9
0.32
0.32
0.32
0.4
156
156
156
156
Continuous Drain Current
(TJ = 150_C)
TA= 25_C
TA= 100_C
Pulsed Drain Currenta
Power Dissipation
ID
IDM
TA= 25_C
TA= 100_C
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
PD
RthJA
TJ, Tstg
–55 to 150
Unit
V
A
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70199
S-04279—Rev. E, 16-Jul-01
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11-1
TN0201L/0401L, VN0300L/LS
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
TN0201L
TN0401L
Parameter
Symbol
Typa
Min
TN0201L
55
20
TN0401L
55
40
VDS = VGS, ID = 0.25 mA
1.4
0.5
VDS = VGS, ID = 1 mA
1.5
Test Conditions
Max
VN0300L
VN0300LS
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V
ID = 10 mA
30
Gate-Threshold Voltage
VGS(th)
0.8
VDS = 0 V, VGS = "20 V
Gate-Body Leakage
IGSS
"100
10
VDS = 0.8 x V(BR)DSS, VGS = 0 V
Drain-Source On-Resistanceb
ID(on)
100
VDS = 10 V, VGS = 4.5 V
0.9
0.25
VDS = 10 V, VGS = 10 V
3.5
1
VGS = 3.5 V, ID = 0.05 A
1.8
VGS = 5 V, ID = 0.3 A
1.2
VGS = 4.5 V, ID = 0.25 A
1.4
2
2.6
4
0.85
1.2
rDS(on)
TJ = 125_C
VGS = 10 V, ID = 1 A
TJ = 125_C
Forward
Transconductanceb
gfs
VDS = 10 V, ID = 0.5 A
m
mA
1
TJ = 125_C
On-State Drain Currentb
nA
500
TJ = 125_C
IDSS
2.5
"10
VDS = 0 V, VGS = "30 V
VDS = 30 V, VGS = 0 V
Zero Gate Voltage Drain Current
V
2
4
3.3
W
1.2
1.6
500
A
1
2.4
200
200
mS
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz
38
60
100
33
50
95
8
15
25
10
30
30
13
30
30
pF
Switchingc
Turn-On Time
tON
Turn-Off Time
tOFF
VDD = 15 V, RL = 14 W
ID ^ 1 A, VGEN = 10 V
RG = 25 W
Notes
a. For DESIGN AID ONLY, not subject to production testing..
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
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11-2
ns
VNDQ03
Document Number: 70199
S-04279—Rev. E, 16-Jul-01
TN0201L/0401L, VN0300L/LS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
2.0
7V
VGS = 10 V
Output Characteristics for Low Gate Drive
200
2.9 V
2.7 V
160
ID – Drain Current (mA)
1.6
ID – Drain Current (A)
10 V
6V
5V
1.2
0.8
4V
0.4
120
2.5 V
80
2.3 V
40
3V
2.1 V
1.7 V
2V
0
0
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
2.0
VDS – Drain-to-Source Voltage (V)
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
500
TJ = –55_C
3
ID – Drain Current (mA)
rDS(on) – On-Resistance ( Ω )
125_C
400
VDS = 15 V
300
200
100
I D = 0.2 A
0.5 A
2
1.0 A
1
25_C
0
0
0
1
2
3
4
0
5
8
12
16
VGS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
2.5
20
2.25
2.0
rDS(on) – Drain-Source On-Resistance ( Ω )
(Normalized)
rDS(on) – Drain-Source On-Resistance ( Ω )
4
VGS = 4.5 V
1.5
6V
1.0
10 V
0.5
0
VGS = 10 V
2.00
I D = 0.5 A
1.75
1.50
0.1 A
1.25
1.00
0.75
0.50
0
1
2
ID – Drain Current (A)
Document Number: 70199
S-04279—Rev. E, 16-Jul-01
3
–50
–10
30
70
110
150
TJ – Junction Temperature (_C)
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11-3
TN0201L/0401L, VN0300L/LS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
Capacitance
10
120
VDS = 10 V
VGS = 0 V
f = MHz
100
C – Capacitance (pF)
ID – Drain Current (mA)
TJ = 150_C
1
100_C
25_C
0.1
80
60
40
C iss
C oss
20
C rss
–55_C
0.01
0.6
0
0.8
1.0
1.2
1.4
1.6
1.8
0
2.0
10
VGS – Gate-to-Source Voltage (V)
Gate Charge
30
50
40
Load Condition Effects on Switching
100
6
VDD = 25 V
RG = 25 W
VGS = 0 to 10 V
ID =1A
5
VDS = 15 V
t – Switching Time (ns)
VGS – Gate-to-Source Voltage (V)
20
VDS – Drain-to-Source Voltage (V)
4
3
24 V
2
10
td(off)
td(on)
tf
tr
1
1
0.1
0
0
80
160
240
320
400
1
10
ID – Drain Current (A)
Qg – Total Gate Charge (pC)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 156_C/W
3. TJM – TA = PDMZthJA(t)
0.01
Single Pulse
0.01
0.1
0.5
1
5
10
50
100
500
1K
5K
10 K
t1 – Square Wave Pulse Duration (sec)
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11-4
Document Number: 70199
S-04279—Rev. E, 16-Jul-01