TN2460L/TN2460T Vishay Siliconix N-Channel 240-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN2460L 240 TN2460T rDS(on) Max (W) VGS(th) (V) ID Min (mA) 60 @ VGS = 10 V 0.5 to 1.8 75 60 @ VGS = 10 V 0.5 to 1.8 51 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control Low On-Resistance: 40 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature “Run-Away” TO-226AA (TO-92) S 1 G 2 D TO-236 (SOT-23) Device Marking Front View G “S” TN 2406L xxyy 3 “S” = Siliconix Logo xxyy = Date Code 3 Marking Code: T2wll 1 S D 2 T2 = Part Number Code for TN2460T w = Week Code ll = Lot Traceability Top View Top View TN2460L ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol TN2460L TN2460T Drain-Source Voltage VDS 240 240 Gate-Source Voltage VGS "20 "20 75 51 Continuous Drain Current (TJ = 150_C) _ TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range ID IDM TA= 25_C TA= 100_C PD RthJA TJ, Tstg 48 32 800 400 0.8 0.36 0.32 0.14 156 350 –55 to 150 Unit V mA W _C/W _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70205 S-04279—Rev. D , 16-Jul-01 www.vishay.com 11-1 TN2460L/TN2460T Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typa V(BR)DSS VGS = 0 V, ID = 10 mA 240 260 VGS(th) VDS = VGS, ID = 250 mA 0.5 1.65 Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) nA "5 TJ = 125_C 0.1 5 TJ = 125_C VDS = 10 V, VGS =10 V 75 140 VDS = 10 V, VGS = 4.5 V 20 130 VGS = 10 V, ID = 0.05 A 38 60 VGS = 4.5 V, ID = 0.02 A 40 60 75 120 gfs VDS = 10 V, ID = 0.05 A 30 m mA mA rDS(on) TJ = 125_C Forward Transconductanceb V "10 VDS = 120 V, VGS = 0 V Drain-Source On-Resistanceb 1.8 70 W mS Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 14 30 4 15 1 10 8 20 20 35 pF Switchingc Turn-On Time tON Turn-Off Time tOFF VDD = 25 V, RL = 500 W ID ^ 0.05 A, VGEN = 10 V, RG = 25 W Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v80 ms duty cycle v1%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 ns VNDN24 Document Number: 70205 S-04279—Rev. D , 16-Jul-01 TN2460L/TN2460T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Transfer Characteristics 100 200 VGS = 10 V 160 80 4V ID – Drain Current (mA) ID – Drain Current (mA) 25_C TJ = –55_C 120 80 3V 125_C 60 40 20 40 VDS = 15 V 2V 0 0 0 4 8 12 16 0 20 1 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 3 4 5 On-Resistance vs. Drain Current 125 100 VGS = 10 V rDS(on) – On-Resistance ( Ω ) 90 rDS(on) – On-Resistance ( Ω ) 2 VGS – Gate-Source Voltage (V) 80 70 ID = 100 mA 60 50 100 75 50 25 50 mA 40 10 mA 0 30 0 4 8 12 16 20 0 50 100 VGS – Gate-Source Voltage (V) Normalized On-Resistance vs. Junction Temperature 200 250 Threshold Region 10 2.25 VDS = 5 V VGS = 4.5 V ID = 50 mA 2.00 TJ = 150_C 1.75 ID – Drain Current (mA) rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) 150 ID – Drain Current (A) 1.50 1.25 1.00 75_C 1 25__C 0.1 –55_C 0.75 0.50 –50 –10 30 70 110 TJ – Junction Temperature (_C) Document Number: 70205 S-04279—Rev. D , 16-Jul-01 150 0.01 0.75 1 1.25 1.5 1.75 2 2.25 2.5 VGS – Gate-Source Voltage (V) www.vishay.com 11-3 TN2460L/TN2460T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Capacitance Gate Charge 20 15.0 VGS = 0 V f = 1 MHz ID = 30 mA VGS – Gate-to-Source Voltage (V) C – Capacitance (pF) 16 Ciss 12 Coss 8 4 12.5 10.0 7.5 VDS = 100 V 5.0 192 V 2.5 Crss 0 0 0 10 20 30 40 50 0 VDS – Drain-to-Source Voltage (V) 100 150 200 250 300 Qg – Total Gate Charge (pC) Drive Resistance Effects on Switching Load Condition Effects on Switching 100 50 VDD = 25 V RL = 500 W VGS = 0 to 10 V ID = 50 mA t – Switching Time (ns) VDD = 25 V RG = 25 W VGS = 0 to 10 V 50 t – Switching Time (ns) 50 20 tf td(off) 10 5 tr tf 10 td(off) tr td(on) 2 td(on) 2 1 1 20 10 50 10 100 20 50 RG – Gate Resistor (W) ID – Drain Current (A) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W 0.01 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70205 S-04279—Rev. D , 16-Jul-01