NTGS3441P Power MOSFET −20 V, −3.16 A, Single P−Channel TSOP−6 Features • • • • Ultra Low RDS(on) to Improve Conduction Loss Low Gate Charge to Improve Switching Losses TSOP−6 Surface Mount Package This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(ON) TYP Applications ID MAX 91 mW @ 4.5 V • High Side Switch in DC−DC Converters • Battery Management −20 V 144 mW @ 2.7 V 188 mW @ 2.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter P−Channel Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±12 V ID −2.5 A Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C t = 10 s TA = 25°C Steady State TA = 25°C TA = 85°C Steady State Power Dissipation (Note 2) 3 −3.16 PD 4 W 0.98 MARKING DIAGRAM 1.60 TA = 25°C ID TA = 85°C TA = 25°C −1.8 A 0.51 W IDM −13 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS −1.5 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C tp = 10 ms Operating Junction and Storage Temperature TSOP−6 CASE 318G STYLE 1 −1.3 PD Pulsed Drain Current 1 2 5 6 −1.8 t = 10 s Continuous Drain Current (Note 2) −3.16 A 1 S3 MG G 1 PT = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT Drain Drain Source 6 5 4 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0751 in sq) 1 2 3 Drain Drain Gate ORDERING INFORMATION Device NTGS3441PT1G Package Shipping † TSOP−6 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 0 1 Publication Order Number: NTGS3441P/D NTGS3441P THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Ambient – Steady State (Note 3) Parameter RqJA 128 °C/W Junction−to−Ambient – t = 10 s (Note 3) RqJA 78 Junction−to−Ambient – Steady State (Note 4) RqJA 244 3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq) ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current V mV/ °C 16 IDSS VGS = 0 V, VDS = −20 V TJ = 25°C −1 TJ = 125°C −10 IGSS VDS = 0 V, VGS = ±12 V VGS(TH) VGS = VDS, ID = −250 mA mA ±100 nA 1.6 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ 0.6 3.2 RDS(on) gFS mV/°C VGS = 4.5 V, ID = −3.0 A 91 110 VGS = 2.7 V, ID = −1.5 A 144 165 VGS = 2.5 V, ID = −1.5 A 188 VDS = −15 V, ID =−1.5 A 4.0 S 345 pF mW CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 40 Total Gate Charge QG(TOT) 3.25 Threshold Gate Charge QG(TH) 0.3 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 1.4 td(ON) VGS = 0 V, f = 1 MHz, VDS = −15 V 150 6.0 nC 7.0 12 ns 14 25 13 25 4.0 8.0 TJ = 25°C 0.8 1.2 TJ = 125°C 0.7 VGS = 4.5 V, VDS = −10 V; ID = −3.0 A 0.6 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Tr VGS = 4.5 V, VDD = −10 V, ID = −1.5 A, RG = 4.7 W td(OFF) Tf DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −3.0 A Reverse Recovery Time tRR 25 Charge Time Ta 10 Discharge Time Tb Reverse Recovery Charge VGS = 0 V, dIS/dt = 100 A/ms, IS = −3.0 A QRR http://onsemi.com 2 ns 15 15 5. Switching characteristics are independent of operating junction temperatures 6. Pulse Test: pulse width = 300 ms, duty cycle = 2% V nC NTGS3441P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 20 20 VDS ≥ −10 V 16 −3.5 V 12 TJ = 25°C −3 V 8 −2.5 V 4 −2 V −1.9 V 0 1 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (AMPS) VGS = −10 V to −4.5 V 2 3 5 4 7 6 9 8 8 4 1 2 3 4 5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.18 0.12 0.06 2 3 4 6 5 8 7 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.30 TJ = 25°C 0.27 VGS = −2.5 V 0.24 0.21 0.18 0.15 0.12 VGS = −4.5 V 0.09 0.06 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5 −ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.5 1000 VGS = 0 V ID = −1.5 A VGS = −4.5 V −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 100°C 12 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) ID = −1.5 A TJ = 25°C 1.4 TJ = 25°C 0 0.24 1 TJ = −55°C 16 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (AMPS) −4 V 1.3 1.2 1.1 1 0.9 100 TJ = 125°C 10 TJ = 100°C 0.8 0.7 −50 1 −25 0 25 50 75 100 125 150 0 5 10 15 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTGS3441P C, CAPACITANCE (pF) VGS = 0 V TJ = 25°C 400 Ciss 200 Coss Crss 0 0 4 8 12 16 5 20 QT 4 16 3 VDS 2 QGS 12 QGD 8 4 ID = −3.0 A TJ = 25°C 0 0.5 1 1.5 2 3 2.5 0 3.5 QG, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 10 −IS, SOURCE CURRENT (AMPS) VDD = −10 V ID = −1.5 A VGS = −4.5 V t, TIME (ns) VGS 1 0 20 −VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS) 600 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) tr td(off) td(on) 10 tf 1 1 10 RG, GATE RESISTANCE (OHMS) VGS = 0 V TJ = 25°C 8 6 4 2 0 0.4 100 0.6 0.8 1 1.2 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Gate Threshold Voltage Variation with Temperature Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTGS3441P PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A L 6 S 1 5 4 2 3 B MILLIMETERS DIM MIN MAX A 2.90 3.10 B 1.30 1.70 C 0.90 1.10 D 0.25 0.50 G 0.85 1.05 H 0.013 0.100 J 0.10 0.26 K 0.20 0.60 L 1.25 1.55 M 0_ 10 _ S 2.50 3.00 D G M J C 0.05 (0.002) K H STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 NTGS3441P ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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