NTLJS3180PZ Power MOSFET −20 V, −7.7 A, mCoolt Single P−Channel, ESD, 2x2 mm WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pads for Excellent • • • • • Thermal Conduction Lowest RDS(on) Solution in 2x2 mm Package Footprint Same as SC−88 Package Low Profile (< 0.8 mm) for Easy Fit in Thin Environments ESD Protected This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX 38 mW @ −4.5 V 50 mW @ −2.5 V −20 V −7.7 A 75 mW @ −1.8 V 200 mW @ −1.5 V Applications S • Optimized for Battery and Load Management Applications in Portable Equipment • High Side Load Switch • Battery Switch • DC−DC Converters G D P−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Symbol Value Unit VDSS −20 V VGS ±8.0 V ID −5.9 A Steady State TA = 25°C TA = 85°C −4.2 t≤5s TA = 25°C −7.7 Steady State PD Power Dissipation (Note 2) ID TA = 85°C 1.9 A −3.5 IDM −23 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) (Note 2) IS −2.8 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C tp = 10 ms Operating Junction and Storage Temperature D 1 6 D D 2 5 D G 3 4 S (Top View) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size, (30 mm2, 2 oz Cu). © Semiconductor Components Industries, LLC, 2008 PIN CONNECTIONS −2.5 W December, 2008 − Rev. 0 AA = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) W 0.7 TA = 25°C 1 6 2 AAMG 5 G 3 4 Pin 1 PD Pulsed Drain Current WDFN6 CASE 506AP 3.3 TA = 25°C Steady State MARKING DIAGRAM D TA = 25°C t≤5s Continuous Drain Current (Note 2) S 1 ORDERING INFORMATION Device NTLJS3180PZTAG NTLJS3180PZTBG Package Shipping† WDFN6 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTLJS3180PZ/D NTLJS3180PZ THERMAL RESISTANCE RATINGS Symbol Max Junction−to−Ambient – Steady State (Note 3) Parameter RqJA 65 Junction−to−Ambient – Steady State Min Pad (Note 4) RqJA 180 Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA 38 Unit °C/W 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu). MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min −20 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = −250 mA, Ref to 25°C Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VDS = −16 V, VGS = 0 V V −5.0 mV/°C TJ = 25°C −1.0 TJ = 85°C −10 IGSS VDS = 0 V, VGS = ±8.0 V VGS(TH) VGS = VDS, ID = −250 mA ±10 mA mA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On−Resistance VGS(TH)/TJ RDS(on) Forward Transconductance gFS −0.45 −1.0 3.0 V mV/°C VGS = −4.5 V, ID = −3.0 A 30 38 VGS = −2.5 V, ID = −3.0 A 40 50 VGS = −1.8 V, ID = −2.0 A 55 75 VGS = −1.5 V, ID = −1.8 A 85 200 VDS = −16 V, ID = −3.0 A 7.7 S 1100 pF mW CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = −16 V 180 130 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) 13 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 4.2 td(ON) 8.0 tr 15 VGS = −4.5 V, VDS = −16 V, ID = −3.0 A 19.5 nC 0.5 1.4 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(OFF) VGS = −4.5 V, VDD = −10 V, ID = −3.0 A, RG = 3.0 W tf ns 70 67 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Recovery Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time VSD VGS = 0 V, IS = −2.0 A TJ = 25°C −0.7 TJ = 125°C −0.6 tRR ta tb −1.0 V 60 VGS = 0 V, dISD/dt = 100 A/ms, IS = −2.0 A QRR 16 44 41 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns nC NTLJS3180PZ TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 14 −ID, DRAIN CURRENT (AMPS) −1.8 V 8 −1.6 V 6 4 −1.4 V 2 −1.2 V −1.0 V 0 1 2 3 4 12 10 8 6 5 TJ = 25°C 4 2 0 TJ = 125°C 0 TJ = 125°C 0.03 TJ = 25°C 0.02 TJ = −55°C 0.01 0 2.0 2.5 4.0 8.0 6.0 TJ = 25°C 0.08 VGS = −1.8 V 0.06 VGS = −2.5 V 0.04 VGS = −4.5 V 0.02 0 2 4 100000 −IDSS, LEAKAGE (nA) 1.25 1.0 0.75 25 50 75 100 8 Figure 4. On−Resistance versus Drain Current and Gate Voltage VGS = 0 V ID = −3 A VGS = −4.5 V 0 6 −ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current −25 3 0.1 −ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2 Figure 2. Transfer Characteristics 0.04 0.5 −50 1.5 Figure 1. On−Region Characteristics VGS = −4.5 V 1.5 1 0.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.05 1.75 TJ = −55°C −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (AMPS) VDS ≥ 5 V −2.0 V 10 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS = −2.2 V to −5 V 12 14 TJ = 25°C 125 150 10000 TJ = 150°C TJ = 125°C 1000 100 0 4 8 12 16 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 20 NTLJS3180PZ TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 2200 2000 C, CAPACITANCE (pF) 1800 -V GS, GATE-TO-SOURCE VOLTAGE (VOLTS) TJ = 25°C VDS = VGS = 0 V 1600 1400 Ciss 1200 1000 Crss 800 600 400 200 0 10 Coss 5 VGS 0 VDS 5 10 15 20 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1000 −IS, SOURCE CURRENT (AMPS) td(off) tf 100 tr td(on) 10 10 RG, GATE RESISTANCE (OHMS) 3 VGS 2 QGS QGD 1 0 ID = −3.0 A TJ = 25°C 0 5 10 QG, TOTAL GATE CHARGE (nC) VGS = 0 V TJ = 25°C 1 0.6 0.2 0.4 0.8 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 10 100 ms 1 ms 1 0.01 10 ms VGS = 20 V SINGLE PULSE TC = 25°C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1.0 Figure 10. Diode Forward Voltage versus Current 100 0.1 15 2 0 0 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance −ID, DRAIN CURRENT (AMPS) t, TIME (ns) 4 3 VDD = −10 V ID = −3.0 A VGS = −4.5 V 1 QT Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge Figure 7. Capacitance Variation 1 5 dc 1 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NTLJS3180PZ EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1000 100 D = 0.5 0.2 0.1 10 0.05 P(pk) 0.02 0.01 1 0.1 0.000001 See Note 2 on Page 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) RqJA(t) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) Figure 12. Thermal Response http://onsemi.com 5 1 10 100 1000 NTLJS3180PZ PACKAGE DIMENSIONS WDFN6 CASE 506AP−01 ISSUE B D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. CENTER TERMINAL LEAD IS OPTIONAL. TERMINAL LEAD IS CONNECTED TO TERMINAL LEAD # 4. 6. PINS 1, 2, 5 AND 6 ARE TIED TO THE FLAG. A B PIN ONE REFERENCE 0.10 C 2X 2X ÍÍ ÍÍ E DIM A A1 A3 b b1 D D2 E E2 e K L L2 J J1 0.10 C A3 0.10 C A 7X 0.08 C A1 C D2 6X L SEATING PLANE SOLDERMASK DEFINED MOUNTING FOOTPRINT 4X 1 e L2 3 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 0.51 0.61 2.00 BSC 1.00 1.20 2.00 BSC 1.10 1.30 0.65 BSC 0.15 REF 0.20 0.30 0.20 0.30 0.27 REF 0.65 REF 2.30 b1 6X 0.10 C A E2 1.10 6X B 6X 0.35 0.43 0.05 C 1 NOTE 5 K 6 4 b J J1 0.60 1.25 6X 0.10 C A 0.05 C 0.35 B NOTE 3 0.34 BOTTOM VIEW 0.65 PITCH 0.66 DIMENSIONS: MILLIMETERS mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTLJS3180PZ/D