NTMD6601NR2G Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8 Features •Low RDS(on) to Minimize Conduction Losses •Low Capacitance to Minimize Driver Losses •Optimized Gate Charge to Minimize Switching Losses •Dual SO-8 Surface Mount Package Saves Board Space •This is a Pb-Free Device http://onsemi.com RDS(on) Max V(BR)DSS ID Max 215 mW @ 10 V 80 V 2.2 A 245 mW @ 4.5 V Applications •LCD Displays N-Channel MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Rating Value Unit Drain-to-Source Voltage VDSS 80 V Gate-to-Source Voltage - Continuous VGS ±15 V ID 1.4 A D Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 1.0 W TA = 25°C ID 1.1 A S MARKING DIAGRAM & PIN ASSIGNMENT Continuous Drain Current RqJA (Note 2) TA = 70°C Steady State 1.2 TA = 70°C G 0.9 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.6 W Continuous Drain Current RqJA t < 5 s (Note 1) TA = 25°C ID 2.2 A Pulsed Drain Current TA = 70°C TA = 25°C, tp = 10 ms IDM 9.0 A TJ, TSTG -55 to +150 °C IS 1.3 A Single Pulse Drain-to-Source Avalanche Energy TJ = 25C, VDD = 50 V, VGS = 10 V, IL = 7.0 Apk, L = 1.0 mH, RG = 25 W EAS 25 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Rating Symbol Max Unit Junction-to-Ambient – Steady State (Note 1) RqJA 120 Junction-to-Ambient – t≤ 5 s (Note 1) RqJA 48 Junction-to-FOOT (Drain) RqJF 40 Junction-to-Ambient – Steady State (Note 2) RqJA 200 Operating Junction and Storage Temperature Source Current (Body Diode) 1 1 6601N A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION °C/W 1. Surface-mounted on 2 inch sq FR4 board using 1 inch sq pad size, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. February, 2008 - Rev. 0 6601N AYWW G SO-8 CASE 751 STYLE 11 8 S1 G1 S2 G2 THERMAL RESISTANCE RATINGS © Semiconductor Components Industries, LLC, 2008 D1 D1 D2 D2 8 1.7 1 Device Package Shipping† NTMD6601NR2G SO-8 (Pb-Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMD6601N/D NTMD6601NR2G ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 80 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V 99.8 VGS = 0 V, VDS = 80 V mV/°C TJ = 25°C 1.0 TJ = 125°C 25 IGSS VDS = 0 V, VGS = ±15 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 3.0 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance RDS(on) 1.0 1.9 4.6 mV/°C VGS = 10 V ID = 2.2 A 190 215 VGS = 5.0 V ID = 1.0 A 215 245 220 400 55 100 mW CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 16 30 Total Gate Charge QG(TOT) 5.0 9.0 Threshold Gate Charge QG(TH) 0.4 Gate-to-Source Charge QGS Gate-to-Drain Charge Total Gate Charge VGS = 0 V, f = 1.0 MHz, VDS = 25 V VGS = 5.0 V, VDS = 40 V, ID = 1.0 A QGD QG(TOT) pF nC 1.0 2.75 VGS = 10 V, VDS = 40 V, ID = 1.0 A 9.0 15 21 35 62 105 52 85 tf 50 85 td(ON) 15 nC SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tr td(OFF) VGS = 4.5 V, VDD = 40 V, ID = 1.0 A, RG = 27 W VGS = 10 V, VDD = 40 V, ID = 2.5 A, RG = 47 W tf 95 ns ns 50 105 BODY - DRAIN DIODE RATINGS (Note 3) Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Ta Discharge Time Reverse Recovery Time Tb VGS = 0 V ID = 1.0 A TJ = 25°C 0.8 TJ = 150°C 0.6 1.0 44 VGS = 0 V, dIS/dt = 100 A/ms, IS = 1.0 A QRR http://onsemi.com 2 ns 21 23 43 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. V 86 nC NTMD6601NR2G TYPICAL ELECTRICAL CHARACTERISTICS 5 ID, DRAIN CURRENT (A) 8V ID, DRAIN CURRENT (A) 5V 9V 4 6 4V 10 V 6V VGS = 3.5 V 7V 3 2 TJ = 25°C 1 VDS ≥ 10 V 5 4 3 TJ = 25°C 2 1 TJ = 100°C 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0 2 1 2 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (V) 0.5 VGS = 5.0 V 0.4 TJ = 100°C 0.3 TJ = 25°C 0.2 TJ = -55°C 0.1 0 0 1 2 3 4 5 ID, DRAIN CURRENT (A) 0.3 TJ = 25°C 0.25 VGS = 5.0 V 0.2 VGS = 10 V 0.15 0.1 0.05 0 1 0 2 3 4 5 ID, DRAIN CURRENT (A) Figure 3. On-Resistance versus Drain Current and Temperature Figure 4. On-Resistance versus Drain Current and Gate Voltage 2.5 100,000 VGS = 5.0 V ID = 1.0 A VGS = 0 V 2 IDSS, LEAKAGE (nA) 10,000 1.5 1 TJ = 150°C 1000 100 TJ = 100°C 10 0.5 0 -50 6 Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TJ = -55°C 1 -25 0 25 50 75 100 125 150 10 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-To-Source Leakage Current versus Voltage http://onsemi.com 3 80 NTMD6601NR2G 600 VDS = 0 V VGS = 0 V TJ = 25°C Ciss 500 C, CAPACITANCE (pF) VGS, GATE-TO-SOURCE VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS 400 Crss 300 Ciss 200 100 Coss Crss 0 -10 -5 0 VGS 5 10 15 20 25 10 QT 8 6 Q1 4 Q2 2 ID = 1.0 A TJ = 25°C 0 0 1 2 3 4 5 6 7 QG, TOTAL GATE CHARGE (nC) VDS 8 9 Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 2.5 100 IS, SOURCE CURRENT (A) t, TIME (ns) VDD = 64 V ID = 2.2 A VGS = 5.0 V tr td(off) tf td(on) 10 1 VGS = 0 V TJ = 25°C 2 1.5 1 0.5 0 1 10 100 0 0.2 0.4 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 10. Diode Forward Voltage versus Current ID, DRAIN CURRENT (A) 10 100 ms VGS = 15 V SINGLE PULSE TC = 25°C 1 ms 10 ms 1 dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 10 100 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) Figure 9. Resistive Switching Time Variation versus Gate Resistance 1 25 ID = 7.0 A 20 15 10 5 0 25 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 50 75 100 125 150 175 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTMD6601NR2G TYPICAL ELECTRICAL CHARACTERISTICS Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 Normalized to qja at 10s. Chip 0.0175 W 0.0710 W 0.2706 W 0.5776 W 0.7086 W 0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F 0.01 0.01 SINGLE PULSE 0.001 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 t, TIME (s) 1.0E+00 Figure 13. Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 14. Diode Reverse Recovery Waveform http://onsemi.com 5 1.0E+01 1.0E+02 Ambient 1.0E+03 NTMD6601NR2G PACKAGE DIMENSIONS SO-8 NB CASE 751-07 ISSUE AJ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. -XA 8 5 S B 0.25 (0.010) M Y M 1 4 K -YG C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE -Z- 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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