PJ09N03D 25V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), [email protected],IDS@30A=16mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TO-252 Molded Plastic • Terminals : Solderable per MIL-STD-750D,Method 1036.3 Drain • Marking : 09N03D Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R S ym b o l Li mi t U ni t s D r a i n- S o ur c e Vo l t a g e V DS 25 V G a t e - S o ur c e Vo l t a g e V GS +20 V ID 50 A ID M 240 A PD 52 31 W T J , T S TG -5 5 to + 1 5 0 Avalanche Energy with Single Pulse ID=27A, VDD=25V, L=0.5mH E AS 180 Junction-to-Case Thermal Resistance RθJC 2 .4 O C /W Junction-to Ambient Thermal Resistance(PCB mounted)2 RθJA 50 O C /W C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e T A = 2 5 OC T A = 7 5 OC O C mJ Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.19.2006 PAGE . 1 PJ09N03D ELECTRICALCHARACTERISTICS P a ra me te r S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s D r a i n- S o ur c e B r e a k d o w n Vo l t a g e B V DSS V G S = 0 V , ID = 2 5 0 u A 25 - - V G a t e Thr e s ho l d Vo l t a g e V G S ( t h) V D S = V G S , ID = 2 5 0 u A 1 - 3 V D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=4.5V, ID=30A - 1 2 .5 1 6 .0 D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e R D S ( o n) VGS=10V, ID=30A - 6.5 9.0 Ze r o G a t e Vo l t a g e D r a i n C ur r e nt ID S S VDS=25V, VGS=0V - - 1 uA Gate Body Leakage IG S S V GS = + 2 0 V , V D S = 0 V - - +100 nA Forward Transconductance g fS V D S = 1 0 V , ID = 1 5 A 30 - - S V D S = 1 5 V , ID = 1 5 A , V G S = 5 V - 2 2 .1 - - 3 9 .0 - - 6 .0 - S ta ti c mΩ D ynami c To t a l G a t e C h a r g e Qg nC V D S = 1 5 V , ID = 1 5 A V GS = 1 0 V G a t e - S o ur c e C ha r g e Qgs G a t e - D r a i n C ha r g e Qgd - 7 .6 - Tu r n - O n D e l a y Ti m e T d ( o n) - 13.0 14.6 - 10.4 12.4 - 4 1 .2 4 8 .6 Tu r n - O n R i s e Ti m e t rr Tu r n - O f f D e l a y Ti m e VDD=15V , RL=15Ω ID=1A , VGEN=10V RG=3.6Ω t d (o ff) ns Tu r n - O f f F a l l Ti m e tf - 1 3 .4 1 5 .8 In p u t C a p a c i t a n c e C iss - 2100 - O ut p ut C a p a c i t a nc e C oss - 450 - R e v e r s e Tr a n s f e r C a p a c i t a n c e C rss - 300 - V D S = 1 5 V , V GS = 0 V f=1 .0 MHZ pF S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is - - - 50 A V SD IS = 3 0 A , V G S = 0 V - 0 .9 1 1 .2 V V DD Switching Test Circuit V IN V DD Gate Charge Test Circuit RL V GS RL V OUT RG 1mA RG STAD-JUN.19.2006 PAGE . 2 PJ09N03D Typical Characteristics Curves (TA=25OC,unless otherwise noted) 60 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 80 V GS = 4.5V, 5.0V, 6.0V, 10.0V 60 4.0V 40 3.5V 20 3.0V 2.5V 0 V DS=10V 50 40 30 T J=25 OC 20 T J=125 OC 10 0 0 1 2 3 4 5 1.5 VDS - Drain-to-Source Voltage (V) 3 3.5 4 4.5 50 R DS(ON) - On-Resistance (m W ) R DS(ON) - On-Resistance (m W ) 2.5 FIG.2- Transfer Characteristic 30 25 20 V GS=4.5V 15 10 V GS=10V 5 ID =30A 40 30 20 T J=125 OC 10 T J=25 OC 0 0 0 20 40 60 2 80 4 FIG.3- On Resistance vs Drain Current 8 10 FIG.4- On Resistance vs Gate to Source Voltage 3000 C - Capacitance (pF) V GS=10V I D=30A 1.4 1.2 1 0.8 -50 6 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) RDS(ON) - On-Resistance(Normalized) 2 V GS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic 1.6 T J=-55 OC V GS=0V f=1MH Z Ciss 2500 2000 1500 1000 Coss 500 Crss 0 -25 0 25 50 75 100 125 150 o TJ - Junction Temperature ( C) FIG.5- On Resistance vs Junction Temperature STAD-JUN.19.2006 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) FIG.6- Capacitance PAGE . 3 PJ09N03D V GS - Gate-to-Source Voltage (V) 10 Vgs Qg Qsw Vgs(th) V DS =15V I D =15A 8 6 4 2 0 0 Qg(th) Qgs 5 I D =250uA 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 o 15 20 25 30 35 40 125 150 Fig.8 - Gate Charge BVDSS - Breakdown Voltage (V) Vth - G-S Threshold Voltage (NORMALIZED) Fig.7 - Gate Charge Waveform 1.3 10 Qg - Gate Charge (nC) Qg Qgd 33 I D =250uA 32 31 30 29 28 -50 -25 0 25 50 75 100 o TJ - Junction Temperature ( C) TJ - Junction Temperature ( C) Fig.9 - Threshold Voltage vs Temperature Fig.10 - Breakdown Voltage vs Junction Temperature IS - Source Current (A) 100 V GS =0V 10 T J =125 C O T J =25 C O T J =-55 C O 1 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.11 - Source-Drain Diode Forward Voltage LEGALSTATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUN.19.2006 PAGE . 4