Si7463DP Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −40 rDS(on) (W) ID (A) 0.0092 @ VGS = −10 V −18.6 0.014 @ VGS = −4.5 V −15 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Automotive − 12-V Boardnet − High-Side Switches − Motor Drives PowerPAK SO-8 S S 6.15 mm 1 2 5.15 mm S 3 S 4 G G D 8 7 D 6 D 5 D D Bottom View P-Channel MOSFET Ordering Information: Si7463DP-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS −40 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V −18.6 −11 −15 −8.9 IDM −60 −4.5 −1.6 5.4 1.9 3.4 1.2 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 18 23 52 65 1.0 1.3 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72440 S-32411—Rev. B, 24-Nov-03 www.vishay.com 1 Si7463DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −1 Typ Max Unit −3 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea VDS = 0 V, VGS = "20 V Diode Forward Voltagea −1 VDS = −40 V, VGS = 0 V, TJ = 70_C −10 VDS v −5 V, VGS = −10 V rDS(on) DS( ) Forward Transconductancea VDS = −40 V, VGS = 0 V mA −40 A VGS = −10 V, ID = −18.6 A 0.0075 0.0092 VGS = −4.5 V, ID = −15 A 0.011 0.014 gfs VDS = −15 V, ID = −18.6 A 50 VSD IS = −4.5 A, VGS = 0 V −0.8 −1.2 121 140 VDS = −20 V, VGS = −10 V, ID = −18.6 A 19.2 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 30.3 Gate-Resistance Rg 2.7 td(on) 20 tr 25 40 200 300 100 150 45 70 Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = −20 V, RL = 20 W ID ^ −1 A, VGEN = −10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = −4.5 A, di/dt = 100 A/ms nC W 30 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 4 V 50 40 I D − Drain Current (A) I D − Drain Current (A) 50 Transfer Characteristics 60 30 3V 20 10 40 30 20 TC = 125_C 10 25_C −55_C 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 72440 S-32411—Rev. B, 24-Nov-03 Si7463DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.016 7000 0.012 C − Capacitance (pF) 0.014 r DS(on) − On-Resistance ( W ) Capacitance 8000 VGS = 4.5 V 0.010 VGS = 10 V 0.008 0.006 Ciss 6000 5000 4000 3000 0.004 2000 0.002 1000 0.000 0 Coss Crss 0 10 20 30 40 50 60 0 8 Gate Charge r DS(on) − On-Resistance (W) (Normalized) V GS − Gate-to-Source Voltage (V) 6 4 2 0 0 25 50 75 100 1.2 1.0 0.8 0.6 −50 125 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.04 r DS(on) − On-Resistance ( W ) 100 I S − Source Current (A) 40 VGS = 10 V ID = 18.6 A 1.4 Qg − Total Gate Charge (nC) TJ = 150_C 10 TJ = 25_C 1 0.0 32 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 18.6 A 8 24 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 10 16 0.03 ID = 18.6 A 0.02 ID = 5 A 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72440 S-32411—Rev. B, 24-Nov-03 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7463DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.8 100 ID = 250 mA 80 0.4 Power (W) V GS(th) Variance (V) 0.6 0.2 60 40 0.0 20 −0.2 −0.4 −50 −25 0 25 50 75 100 125 0 150 0.01 0.1 TJ − Temperature (_C) 1 10 100 Time (sec) Safe Operating Area 100 IDM Limited rDS(on) Limited I D − Drain Current (A) 10 1 P(t) = 0.001 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 P(t) = 10 TA = 25_C Single Pulse dc BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 52_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72440 S-32411—Rev. B, 24-Nov-03 Si7463DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72440 S-32411—Rev. B, 24-Nov-03 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 www.vishay.com 5