FDW2501N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • 6 A, 20 V. Applications • High performance trench technology for extremely low RDS(ON) RDS(ON) = 0.018 Ω @ VGS = 4.5V RDS(ON) = 0.028 Ω @ VGS = 2.5V • Extended VGSS range (±12V) for battery applications. • Load switch • Low profile TSSOP-8 package • Motor drive • DC/DC conversion • Power management G2 S2 S2 D2 G1 S1 S1 D1 TSSOP-8 1 8 2 7 3 6 4 5 Pin 1 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS ID Gate-Source Voltage ±12 V 6 A Drain Current – Continuous (Note 1a) – Pulsed PD 30 Power Dissipation TJ, TSTG (Note 1a) 1.0 (Note 1b) 0.6 W -55 to +150 °C (Note 1a) 125 °C/W (Note 1b) 208 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking 2501N 2004 Fairchild Semiconductor Corporation Device FDW2501N Reel Size Tape width Quantity 13’’ 12mm 3000 units FDW2501N Rev E(W) FDW2501N March 2004 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ±12 V, VDS = 0 V ±100 nA 1.5 V On Characteristics 20 V 12 mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C ID(on) On–State Drain Current VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 6.0 A 32 S VDS = 10 V, f = 1.0 MHz V GS = 0 V, 1290 pF 0.4 0.9 -3.2 VGS = 4.5 V, ID = 6.0 A VGS = 2.5 V, ID = 5.0 A VGS = 4.5 V, ID = 6.0A, TJ=125°C 15.5 19.6 20 mV/°C mΩ 18 28 29 30 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics 315 pF 170 pF Ω VGS = 15 mV, f = 1.0 MHz 2.0 VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω 10 18 ns 15 27 ns (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 26 47 ns tf Turn–Off Fall Time 9.5 19 ns Qg Total Gate Charge 12 17 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 10 V, VGS = 4.5 V ID = 6.0 A, 2.4 nC 3.3 nC Drain–Source Diode Characteristics and Maximum Ratings trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IS VSD IF = 6.0 A, diF/dt = 100 A/µs Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 0.83 A Voltage (Note 2) 20 nS 6.7 nC 0.7 0.83 1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4. b) RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDW2501N Rev E(W) FDW2501N Electrical Characteristics FDW2501N Typical Characteristics 30 1.8 2.5V VGS = 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V ID, DRAIN CURRENT (A) 25 3.5V 20 2.0V 15 10 5 1.6 1.4 2.5V 1.2 3.0V 3.5V 4.0V 4.5V 1 1.5V 0 0.8 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3 0 Figure 1. On-Region Characteristics. RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.2 1 0.8 0.6 30 0 25 50 75 100 125 ID = 3.0A 0.04 0.03 o TA = 125 C 0.02 TA = 25oC 0.01 150 0 2 o TJ, JUNCTION TEMPERATURE ( C) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 30 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 25 ID, DRAIN CURRENT (A) 25 0.05 ID = 6.0A VGS = 4.5V -25 10 15 20 ID, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 -50 5 20 15 10 o TA = 125 C -55oC 5 25oC 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2501N Rev E(W) FDW2501N Typical Characteristics 1800 f = 1MHz VGS = 0 V ID = 6.0A 1500 8 Ciss VDS = 5V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 10V 6 15V 4 2 1200 900 600 Coss 300 Crss 0 0 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 30 0 Figure 7. Gate Charge Characteristics. 20 Figure 8. Capacitance Characteristics. 100 50 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100us 1ms 10 10ms 100ms 1s 1 10s DC VGS = 4.5V SINGLE PULSE RθJA = 208oC/W 0.1 o TA = 25 C 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 208°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA =208 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW2501N Rev E(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ FACT™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I9