STU/D609S

Gr
Pr
STU/D609S
S a mHop Microelectronics C orp.
Ver 1.1
P-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m ) Max
Rugged and reliable.
53 @ VGS=-10V
-60V
TO-252 and TO-251 Package.
-20A
80 @ VGS=-4.5V
G
G
D
S
STU SERIES
TO - 252AA( D - PAK )
S
STD SERIES
TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
IDM
EAS
Drain Current-Continuous
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
V
±20
-20
V
A
TC=70°C
-16
A
-60
A
156
mJ
c
PD
Units
-60
TC=25°C
a
-Pulsed
Sigle Pulse Avalanche Energy
Limit
TC=25°C
42
W
TC=70°C
27
W
-55 to 150
°C
3
50
°C/W
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
°C/W
Jun,22,2012
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STU/D609S
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Conditions
Min
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-60
IDSS
Zero Gate Voltage Drain Current
VDS=-48V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
Symbol
Parameter
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
Typ
Max
Units
V
1
±100
uA
nA
-2.7
-4
V
42
53
VGS=-4.5V , ID=-8.5A
59
80
m ohm
m ohm
VDS=-10V , ID=-10A
32
S
2420
144
pF
pF
pF
VDS=VGS , ID=-250uA
VGS=-10V , ID=-10A
-2
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
VDS=-25V,VGS=0V
f=1.0MHz
107
b
Gate-Drain Charge
ns
ns
ns
ns
VDS=-30V,ID=-10A,VGS=-10V
54
33
120
18
43
nC
VDS=-30V,ID=-10A,VGS=-4.5V
20
nC
VDS=-30V,ID=-10A,
VGS=-10V
7
11.2
nC
nC
VGS=0V,IS= -2A
-0.78
VDD=-30V
ID=-1.0A
VGS=-10V
RGEN= 6 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
-1.3
V
Notes
_ 300us, Duty Cycle <
_ 2%.
a.Pulse Test:Pulse Width <
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,VDD = 30V .(See Figure13)
Jun,22,2012
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STU/D609S
Ver 1.1
25
20
VGS = -4.5V
16
-I D, Drain Current(A)
-ID, Drain Current(A)
VGS = -10V
VGS = -5V
12
VGS = -4V
8
4
20
15
T j=125 C
10
25 C
-55 C
5
VGS = -3.5V
0
0
0
1.0
0.5
2.0
1.5
2.5
3.0
0
-V DS, Drain-to-Source Voltage(V)
140
2.0
120
1.8
R DS(on), On-Resistance
Normalized
RDS(on)(m Ω)
4
3
5
6
Figure 2. Transfer Characteristics
100
80
V G S =-4.5V
60
40
V G S =-10V
20
V G S =-10V
I D =-10A
1.6
1.4
1.2
V G S =-4.5V
I D =-8.5A
1.0
0
1
8
4
12
16
0
20
25
50
75
100
125
150
T j( C )
-I D, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.6
Vth, Normalized
Gate-Source Threshold Voltage
2
-V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
1
1
V DS =V G S
I D =-250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
1.15
1.10
I D =-250uA
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jun,22,2012
3
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STU/D609S
Ver 1.1
20.0
180
-Is, Source-drain current(A)
I D = -10A
RDS(on)(m Ω)
150
120
90
125 C
60
75 C
30
25 C
125 C
10.0
5.0
75 C
25 C
1.0
0
2
0
4
6
8
10
-V GS, Gate-to-Source Voltage(V)
0.25
0.50
0.75
1.00
1.25
-VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
-V GS, Gate to Source Voltage(V)
3000
C is s
2500
C, Capacitance(pF)
0
2000
1500
1000
500
Co s s
C rs s
0
0
5
10
20
15
25
6
4
2
0
30
V DS = -30V
I D = -10A
8
0
6
12
18
24
30
36
42
-V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
48
300
100
TD(off )
-ID, Drain Current(A)
100
Switching Time(ns)
TD(on)
Tr
Tf
10
VDS=-30V,ID=-1A
VGS=-10V
R
10
DS
(
)
ON
L im
it
10
1m
10
0u
s
s
m
DC s
1
VGS= -10V
Single Pulse
TC=25 C
1
1
10
100
0.1
Rg, Gate Resistance(Ω)
1
10
60
-V DS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Figure 11. switching characteristics
Jun,22,2012
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STU/D609S
Ver 1.1
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
1.
2.
3.
4.
0.01
S ING LE P ULS E
R ӰJ A (t)=r (t) * R ӰJ A
R ӰJ A =S ee Datas heet
T J M-T A = P DM* R ӰJ A (t)
Duty C ycle, D=t1/t2
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Jun,22,2012
5
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STU/D609S
Ver 1.1
E
TO-252
A
b2
C
L3
1
D1
D
E1
H
1
2
3
DETAIL "A"
L4
b1
e
b
L2
L
A1
DETAIL "A"
L1
SYMBOLS
A
A1
b
b1
b2
C
D
D1
E
E1
e
H
L
L1
L2
L3
L4
1
MILLIMETERS
MIN
2.100
0.000
0.400
0.770
4.800
0.400
5.300
4.900
6.300
4.400
2.290
8.900
1.397
2.743
0.508
0.890
0.500
0°
7°
INCHES
MAX
2.500
0.200
0.889
1.140
5.460
0.600
6.223
5.515
6.731
5.004
REF
10.400
1.770
REF.
REF.
1.700
1.100
10°
REF.
MIN
0.083
0.000
0.016
0.030
0.189
0.016
0.209
0.193
0.248
0.173
0.090
0.350
0.055
0.108
0.020
0.035
0.020
0°
7°
MAX
0.098
0.008
0.035
0.045
0.215
0.024
0.245
0.217
0.265
0.197
BSC
0.409
0.070
REF.
REF.
0.067
0.043
10 °
REF.
Jun,22,2012
6
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STU/D609S
Ver 1.1
TO-252 Tape and Reel Data
TO-252 Carrier Tape
D1
B0
E
E2
T
E1
P1
P2
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
M
ӿ 330
ӿ330
² 0.5
N
W
ӿ97
² 1.0
17.0
+ 1.5
- 0
T
H
2.2
ӿ13.0
+ 0.5
- 0.2
K
S
10.6
2.0
²0.5
G
R
V
Jun,22,2012
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