New Product SUP90N03-03 Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a, e 0.0029 at VGS = 10 V 90 0.0033 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested RoHS 82 nC COMPLIANT APPLICATIONS • OR-ing • Server • DC/DC TO-220AB D G DRAIN connected to TAB S G D S Top View N-Channel MOSFET Ordering Information: SUP90N03-03-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TC = 70 °C TA = 25 °C 90e ID 28.8b, c Pulsed Drain Current IDM 90 Avalanche Current Pulse IAS 36 EAS 64.8 Single Pulse Avalanche Energy Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 70 °C TA = 25 °C IS A 3.13b, c 187a 131 PD W 3.75b, c 2.63b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range V 90a, e TC = 25 °C Maximum Power Dissipation A 27b, c TA = 70 °C L = 0.1 mH V 90a, e TC = 25 °C Continuous Drain Current (TJ = 175 °C) Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb, d Maximum Maximum Junction-to-Case t ≤ 10 sec Steady State Symbol Typical Maximum Unit RthJA RthJC 32 0.5 40 0.6 °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under Steady State conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 90 A. Document Number: 74341 S-70303-Rev. A, 12-Feb-07 www.vishay.com 1 New Product SUP90N03-03 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = 250 µA 30 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea gfs V 35 mV/°C - 7.5 1.5 2.5 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 90 µA A VGS = 10 V, ID = 28.8 A 0.0024 0.0029 VGS = 4.5 V, ID = 27 A 0.0027 0.0033 VDS = 15 V, ID = 28.8 A 160 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 12065 VDS = 15 V, VGS = 0 V, f = 1 MHz 970 VDS = 15 V, VGS = 10 V, ID = 28.8 A td(off) 171 257 81.5 123 VDS = 15 V, VGS = 4.5 V, ID = 28.8 A 34 f = 1 MHz 1.4 2.1 18 27 11 17 70 105 VDD = 15 V, RL = 0.625 Ω ID ≅ 24 A, VGEN = 10 V, Rg = 1 Ω tf 10 15 td(on) 55 83 180 270 tr td(off) nC 29 td(on) tr pF 1725 VDD = 15 V, RL = 0.67 Ω ID ≅ 22.5 A, VGEN = 4.5 V, Rg = 1 Ω tf 55 83 12 18 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD TC = 25 °C 90 90 IS = 22 A 0.8 1.2 A V Body Diode Reverse Recovery Time trr 52 78 ns Body Diode Reverse Recovery Charge Qrr 70.2 105 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 27 25 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74341 S-70303-Rev. A, 12-Feb-07 New Product SUP90N03-03 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 90 3.0 VGS = 10 V thru 4 V 2.4 I D - Drain Current (A) I D - Drain Current (A) 75 60 45 30 1.8 1.2 TC = 25 °C 0.6 15 VGS = 2 V 0 0.0 TC = 125 °C VGS = 3 V TC = - 55 °C 0.0 0.5 1.0 1.5 2.0 2.5 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 600 0.0032 TC = 25 °C 0.0030 rDS(on) – On-Resistance (Ω) G fs - Transconductance (S) 500 TC = 125 °C 400 300 TC = - 55 °C 200 100 VGS = 4.5 V 0.0028 0.0026 VGS = 10 V 0.0024 0.0022 0 0.0020 0 10 20 30 40 50 60 70 80 90 0 15 30 ID - Drain Current (A) 60 75 90 ID - Drain Current (A) Transconductance rDS(on) vs. Drain Current 10 15000 V GS - Gate-to-Source Voltage (V) 9000 6000 Coss 3000 Crss 0 0 VDS = 15 V ID = 28.8 A Ciss 12000 C - Capacitance (pF) 45 8 VDS = 24 V 6 4 2 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 74341 S-70303-Rev. A, 12-Feb-07 30 0 30 60 90 120 150 180 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 New Product SUP90N03-03 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 100 VGS = 10 V, ID = 28.8 A VGS = 4.5 V, ID = 27 A 10 I S - Source Current (A) rDS(on) - On-Resistance (Normalized) 1.4 1.2 1.0 1 T J = 150 °C T J = 25 °C 0.1 0.8 0.01 0.6 - 50 - 25 0 25 50 75 100 125 150 0.001 175 0 0.2 0.4 0.6 0.8 1 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Forward Diode Voltage vs. Temperature 0.005 2.8 0.004 2.4 TA = 125 °C V GS(th) Variance (V) rDS(on) - On-Resistance (Ω) ID = 28.8 A 0.003 TA = 25 °C 0.002 ID = 250 µA 2.0 1.6 0.001 1.2 0.000 0 2 4 6 8 0.8 - 50 - 25 10 0 25 50 75 100 125 150 175 TJ - Temperature (°C) VGS - Gate-to-Source Voltage (V) rDS(on) vs. VGS vs. Temperature Threshold Voltage 1000 *Limited by rDS (on) I D - Drain Current (A) 100 10 10 ms 100 ms 1 1s 10 s dc 0.1 0.01 TA = 25 °C Single Pulse 0.001 0.1 1 *VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74341 S-70303-Rev. A, 12-Feb-07 New Product SUP90N03-03 Vishay Siliconix 300 300 250 250 Power Dissipation (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 200 150 Package Limited 100 200 150 100 50 50 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TC - Case Temperature (°C) TC - Case Temperature (°C) Power Derating Current Derating* *The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74341 Document Number: 74341 S-70303-Rev. A, 12-Feb-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1